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48-TFBGA
(415 parts in total)| Mfr.Part# | Description | Manufacturer | In Stock | Operation |
|---|---|---|---|---|
| XCF32PFS48C | CSP-48(8x9) Memory - Configuration Proms for ROHS FPGAs | Amd | 6,086 | Add to BOM |
| XCF08PFS48C | XCF08P - PROMs for Configuration | Amd | 9,929 | Add to BOM |
| CY62177DV30LL-55BAXI | High-density, low-voltage SRAM for reduced power consumption | Infineon Technologies | 5,185 | Add to BOM |
| IS61WV204816BLL-10BLI | 2Mx16 Memory Module | ISSI, Integrated Silicon Solution Inc | 6,715 | Add to BOM |
| CY7C1071DV33-12BAXI | SRAM memory module, 32MB capacity, operating temperature range of -40 to 85 degrees Celsius | Infineon Technologies | 5,999 | Add to BOM |
| IS61WV51216BLL-10MLI | Standard SRAM, 512KX16, 10ns, CMOS, PBGA48 | ISSI, Integrated Silicon Solution Inc | 6,075 | Add to BOM |
| SST39VF1601-70-4I-B3KE | NOR Flash Parallel 3.3V 16M-bit 1M x 16 70ns 48-Pin TFBGA Tray | MICROCHIP | 8,652 | Add to BOM |
| XCF32PFSG48C | This XCFPFSGC FPGA chip is an integrated circuit designed for programming and reconfiguring electronic devices | Amd | 6,994 | Add to BOM |
| IS61WV102416BLL-10MI | IS61WV102416BLL-10MI is a high-speed static random access memory (SRAM) with a capacity of 16 megabits and operates at 3.3 volts | Issi | 8,573 | Add to BOM |
| MK65FN2M0VMI18 | Kinetis MCU with RISC architecture for high-performance computing tasks | NXP Semiconductor | 3,188 | Add to BOM |
| XCF16PFS48C | Memory for FPGA Configuration | Amd | 5,015 | Add to BOM |
| RMLV1616AGBG-5S2#AC0 | SRAM Memory IC 16Mbit Parallel 55 ns 48-TFBGA (7.5x8.5) | Renesas Technology Corp | 2,249 | Add to BOM |
| SST38VF6401-90-5I-B3KE | FLASH Memory IC 64Mbit Parallel 90 ns 48-TFBGA (6x8) | Microchip Technology | 9,695 | Add to BOM |
| SST39VF800A-70-4C-B3KE | The SST39VF800A-70-4C-B3KE is a parallel NOR flash chip, providing a storage capacity of 8M-bit with a data width of 512K x 16 | Microchip Technology | 5,899 | Add to BOM |
| M29W320EB70ZE6F | Advanced 2MB Flash Solution for Industrial Applications | Micron Technology Inc. | 9,869 | Add to BOM |
| IS61LV25616AL-10BI | Asynchronous Memory | ISSI, Integrated Silicon Solution Inc | 8,177 | Add to BOM |
| IS66WVE4M16EALL-70BLI | With a capacity of 4Mx16, the IS66WVE4M16EALL-70BLI is a Cellular RAM Pseudo SRAM designed to operate within a voltage range of 1 | ISSI, Integrated Silicon Solution Inc | 8,232 | Add to BOM |
| IS66WVE4M16BLL-70BLI | PSRAM Async Single Port 64M-bit 4M x 16 70ns 48-Pin FBGA | ISSI, Integrated Silicon Solution Inc | 8,495 | Add to BOM |
| IS66WVE4M16EBLL-55BLI | The IS66WVE4M16EBLL-55BLI features a compact size of 6mm and is designed for surface mounting on circuit boards | ISSI, Integrated Silicon Solution Inc | 6,681 | Add to BOM |
| IS66WV51216BLL-55BLI | This product is a PSRAM Async Single Port with a capacity of 8M-bit | ISSI, Integrated Silicon Solution Inc | 7,570 | Add to BOM |
| IS66WV51216EBLL-55BLI | Top-performing 8Mb Pseudo SRAM designed with a 55ns access time and 512Kx16 organization for seamless operation | ISSI, Integrated Silicon Solution Inc | 7,233 | Add to BOM |
| IS66WV1M16EBLL-55BLI | This product is a synchronous SRAM chip that operates at a voltage of 3.3V with a capacity of 16 megabits and a configuration of 1 million by 16 bits | ISSI, Integrated Silicon Solution Inc | 6,879 | Add to BOM |
| IS66WVE4M16ALL-70BLI | The IS66WVE4M16ALL-70BLI is a 4M x 16 Pseudo SRAM with a capacity of 64Mb and a low power consumption design | ISSI, Integrated Silicon Solution Inc | 7,597 | Add to BOM |
| CY7C1051DV33-10BAXI | 10 nanosecond access time asynchronous SRAM chip with a 3.3V power supply | Cypress Semiconductor Corp | 8,822 | Add to BOM |
| CY62177EV30LL-55BAXI | Cutting-edge memory module offering superior performance with a voltage rating of 1.35V | Infineon Technologies Corporation | 3,648 | Add to BOM |
| CY62177EV30LL-55BAXIT | This 32M-bit memory module has a flexible configuration of 4M or 2M x 8/16-bit organization, making it suitable for a variety of applications | Infineon Technologies Corporation | 2,321 | Add to BOM |
| 4MX0121VA13AVG8 | Switch / Multiplexer for DDR3 / DDR4 NVDIMM | Renesas | 2,509 | Add to BOM |
| 4MX0121VA13AVG | Enhance data transfer speeds and reduce latency with this high-performance DDRDDRNVDIMM switch/multiplexer | Renesas | 3,845 | Add to BOM |
| 71V416S12BEI | Asynchronous, high-speed SRAM module for reliable data storag | Renesas Technology Corp | 2,439 | Add to BOM |
| 71V416S12BEG | This advanced memory solution features a compact 9x9mm footprint and supports data transfer rates up to 400MHz | Renesas Technology Corp | 2,249 | Add to BOM |
| 71V416S12BE | Versatile, pin-compatible upgrade for existing syste | Renesas Technology Corp | 2,950 | Add to BOM |
| 71V416S10BEG | SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM | Renesas Technology Corp | 3,474 | Add to BOM |
| 71V416S10BE | SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM | Renesas Technology Corp | 2,034 | Add to BOM |
| 71V416L15BEGI | SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM | Renesas Technology Corp | 3,473 | Add to BOM |
| 71V416L15BEG | Cost-effective and space-efficient RAM solution for a wide range of industries | Renesas Technology Corp | 3,488 | Add to BOM |
| 71V416L15BE | x-bit synchronous SRAM memory compone | Renesas Technology Corp | 2,285 | Add to BOM |
| 71V416L12BEGI8 | Fast access times, low latency, and high reliability make this SRAM an excellent choice" | Renesas Technology Corp | 2,340 | Add to BOM |
| 71V416L12BEG | SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM | Renesas Technology Corp | 2,211 | Add to BOM |
| 71V416L12BE | SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM | Renesas Technology Corp | 3,087 | Add to BOM |
| 71V416L10BEG | High-performance memory solution for demanding applicatio | Renesas Technology Corp | 2,935 | Add to BOM |
| 71V416L10BE | Asynchronous SRAM chip for high-speed data transfer and low power consumption | Renesas Technology Corp | 3,084 | Add to BOM |
| RMWV3216AGBG-5S2#AC0 | SRAM Memory IC 32Mbit Parallel 55 ns 48-TFBGA (7.5x8.5) | Renesas Technology Corp | 2,946 | Add to BOM |
| RMWV3216AGBG-5S2#KC0 | Reliable and scalable, this 32MB SRAM module is an ideal solution for various embedded systems and industrial control applications | Renesas Technology Corp | 3,181 | Add to BOM |
| RMLV1616AGBG-5S2#KC0 | High-density, low-power parallel SRAM module for modern embedded system | Renesas Technology Corp | 3,491 | Add to BOM |
| RMLV0816BGBG-4S2#AC0 | SRAM Memory IC 8Mbit Parallel 45 ns 48-TFBGA (7.5x8.5) | Renesas Technology Corp | 2,937 | Add to BOM |
| RMLV0816BGBG-4S2#KC0 | SRAM Memory IC 8Mbit Parallel 45 ns 48-TFBGA (7.5x8.5) | Renesas Technology Corp | 2,675 | Add to BOM |
| RMLV0416EGBG-4S2#AC0 | Four-megabit capacity provides ample storage for data-intensive systems, utilizing a 48-pin TFBGA package | Renesas Technology Corp | 2,425 | Add to BOM |
| K6F2016U4E-EF70T | Expression : Scalable, reliable, and fast asynchronous SRAM IC suitable for high-speed data transfe | Samsung Semiconductor, Inc. | 6,045 | Add to BOM |
| K6F1616U6A-EF55T | The combination of advanced technology and compact design makes it ideal for space-constrained system | Samsung Semiconductor, Inc. | 5,902 | Add to BOM |
| IS61WV102416EDALL-10BLI-TR | High-density memory solution for space-constrained application | Issi, Integrated Silicon Solution Inc | 5,153 | Add to BOM |
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