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SOT-23-3
(3992 parts in total)| Mfr.Part# | Description | Manufacturer | In Stock | Operation |
|---|---|---|---|---|
| ZC836BTA | Single Varactors, Surface Mount, 25V SOT-23-3 | DIODES INC | 6,369 | Add to BOM |
| NTR4501NT1G | NTR4501NT1G N-channel MOSFET Transistor | Onsemi | 9,458 | Add to BOM |
| 2N7002NXAKR | Maximum voltage rating of 60V | Nexperia | 7,585 | Add to BOM |
| SQ2361ES-T1-GE3 | Automotive-grade P-channel MOSFET rated for 60 volts and 2 | Vishay | 6,107 | Add to BOM |
| NX7002AKVL | N-Channel 60 V 190mA (Ta) 265mW (Ta) Surface Mount TO-236AB | NEXPERIA | 9,601 | Add to BOM |
| TP0610K-T1-E3 | Field-effect transistor with a voltage rating of 60V and a current rating of 0.185A | Vishay | 5,682 | Add to BOM |
| SSM3J331R,LF | Product SSM3J331R,LF is a P-channel silicon MOSFET with a voltage rating of 20V and a current handling capability of 4A | Toshiba | 9,458 | Add to BOM |
| SI2305DS-T1-E3 | Transistor 3.5 A, 8 V, P-Channel, Si | Vishay | 9,458 | Add to BOM |
| PMEG2005CT,215 | PMEG2005CT,215 SOT23 TO-236AB Schottky Diodes & Rectifiers | Nexperia | 8,864 | Add to BOM |
| PDTC143XT,215 | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 mW Surface Mount TO-236AB | Nexperia | 9,458 | Add to BOM |
| MMBT3904-7-F | Compact NPN transistor with V and capabilitie | Diodes Incorporated | 8,525 | Add to BOM |
| MMBTA42-7-F | This product, designated MMBTA42-7-F, features bipolar transistors with a power rating of 300 milliwatts and a voltage tolerance of 300 volts | Diodes Incorporated | 59,000 | Add to BOM |
| LM4040B25FTA | Precise output voltage with an impressive ± tolerance for stable operations | Diodes Incorporated | 9,458 | Add to BOM |
| DMP3099L-7 | 30V 3.8A P-Channel MOSFET | Diodes Incorporated | 9,223 | Add to BOM |
| DMP2035U-7 | Product DMP2035U-7 is a P-channel MOSFET with a maximum voltage rating of 20V and a current rating of 4 | Diodes Incorporated | 7,666 | Add to BOM |
| DMP3098L-7 | High-Efficiency IC for Low-Power Applicatio | Diodes Incorporated | 9,458 | Add to BOM |
| BS250FTA | Metal Oxide Semiconductor Field Effect Transistor (MOSFET) P-Channel with a voltage rating of 45V | Diodes Incorporated | 9,458 | Add to BOM |
| BSH103,215 | Transistor MOSFET N-channel 30V 0.85A TO-236AB package | Nexperia | 8,269 | Add to BOM |
| BSS138-7-F | The BSS138-7-F is a N Channel MOSFET capable of a Continuous Drain Current of 200mA and a Source Voltage rating of 50V | Diodes Incorporated | 9,458 | Add to BOM |
| BSS138Q-7-F | High-quality and reliable component for various electronic circuits | Diodes Incorporated | 9,458 | Add to BOM |
| BZX84-C5V1,215 | Zener Diode 5.1 V 250 mW ±5% Surface Mount TO-236AB | Nexperia USA Inc. | 9,775 | Add to BOM |
| BZX84-C9V1,215 | BZX84-C9V1,215 voltage regulator diodes | Nexperia | 7,114 | Add to BOM |
| BS250KL-TR1-E3 | Enhanced type BS250KL-TR1-E3 MOSFET with 60V voltage rating | Vishay | 9,458 | Add to BOM |
| BC847CMTF | 1-ELEMENT SILICON NPN SMALL SIGNAL BIPOLAR TRANSISTOR, 0.1A I(C), 45V V(BR)CEO | Onsemi | 6,128 | Add to BOM |
| A3212ELHLT-T | Model A3212ELHLT-T, suitable for detecting magnetic fields in automotive environments | Allegro Microsystems | 12,000 | Add to BOM |
| 2N7002,215 | With its 3-pin configuration, the 2N7002,215 MOSFET is easy to integrate into circuit designs | Nexperia | 9,458 | Add to BOM |
| 2N7002E | N-Channel 60 V 300mA (Ta) 350mW (Ta) Surface Mount SOT-23-3 (TO-236) | Vishay | 9,458 | Add to BOM |
| MAX6102EUR+T | This low-power SOT-23-3 packaged IC provides reliable and accurate voltage regulation | Analog Devices | 3,935 | Add to BOM |
| MAX810LEUR | Integrated Circuit for Voltage Detection with +4.63V Fixed Output, CMOS Technology | Analog Devices | 3,212 | Add to BOM |
| MAX809TEUR+T | The MAX809TEUR+T is a voltage monitoring device with a 3.08V threshold and a 0.14 second delay before reset, housed in a 3SOT23 package | Analog Devices | 3,363 | Add to BOM |
| 2N7002P | Transistor with N-channel MOSFET | Nexperia | 2,395 | Add to BOM |
| TLE4961-1M | Hall Sensor TLE4961-1M in SOT-23 Package, meeting ROHS requirements | Infineon | 2,258 | Add to BOM |
| FMMT618TA | NPN Transistor with a maximum voltage rating of 15V and a current rating of 2A in SOT23 package | Diodes Incorporated | 9,479 | Add to BOM |
| FMMT620TA | Compact and efficient Bipolar Junction Transistor (BJT) solution | Diodes Incorporated | 8,139 | Add to BOM |
| ZXMN10A07FTA | 100V N-channel MOSFET housed in SOT23 package with 0.8A current rating | Diodes Incorporated | 2,483 | Add to BOM |
| PMV50EPEAR | Electronic component PMV50EPEAR | Nexperia | 9,458 | Add to BOM |
| SI2337DS-T1-GE3 | P-Channel 80 V 2.2A (Tc) 760mW (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236) | Vishay | 9,458 | Add to BOM |
| SI2307BDS-T1-E3 | SI2307BDS-T1-E3 is a ROHS-compliant MOSFET suitable for a variety of electronic applications | Vishay | 3,662 | Add to BOM |
| SI2323DS-T1-GE3 | Features: Low resistance P Channel MOSFETs with a 1V threshold voltage at 250uA current | Vishay | 6,473 | Add to BOM |
| 2N7002K-T1-GE3 | 2N7002K-T1-GE3 is an N-type MOSFET with built-in Electrostatic Discharge (ESD) protection, designed to carry currents up to 0 | Vishay | 9,458 | Add to BOM |
| SI2303CDS-T1-GE3 | Small Signal Field-Effect Transistor, 1.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 | Vishay | 9,458 | Add to BOM |
| SI2309CDS-T1-GE3 | SOT-23 MOSFETs compliant with ROHS regulations | Vishay | 9,458 | Add to BOM |
| SI2307CDS-T1-GE3 | SOT-23 MOSFET rated for -30V Vds and 20V Vgs | Vishay | 6,123 | Add to BOM |
| SI2333CDS-T1-GE3 | Performance Features: With its low on-resistance and high power handling capability | Vishay | 9,458 | Add to BOM |
| SI2302CDS-T1-GE3 | Product SI2302CDS-T1-GE3 is an N-channel MOSFET rated for 20 volts and 2.6 amps, packaged in a SOT-23 format | Vishay | 9,458 | Add to BOM |
| SI2318CDS-T1-GE3 | SOT-23-3 Packaged N-Channel MOSFET with 40 Volts Drain-to-Source Voltage and 0.042 Ohms On-Resistance | Vishay | 9,458 | Add to BOM |
| SQ2361ES-T1_GE3 | Automotive P-Channel 60 V (D-S) 175 °C MOSFET | VISHAY INTERTECHNOLOGY INC | 7,194 | Add to BOM |
| SI2342DS-T1-GE3 | This MOSFET, identified as SI2342DS-T1-GE3, features N-channel design, supports up to 8 volts and 6 amps, and comes in the SOT-23 package | Vishay | 8,841 | Add to BOM |
| SI2365EDS-T1-GE3 | 20V Power P Channel SOT-23-3 MOSFETs | Vishay | 7,177 | Add to BOM |
| SI2369DS-T1-GE3 | MOSFET: SOT-23 variant designed for applications requiring a maximum drain-source voltage of -30V and a maximum gate-source voltage of 20V | Vishay | 9,458 | Add to BOM |
Other Package