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SuperSO8
(102 parts in total)Mfr.Part# | Description | Manufacturer | In Stock | Operation |
---|---|---|---|---|
BSC057N08NS3G | N-Channel Silicon Metal-oxide Semiconductor FET | Infineon | 3,109 | Add to BOM |
BSC047N08NS3G | 8A current capacity | Infineon | 3,195 | Add to BOM |
BSC600N25NS3 G | 250V 25A TDSON-8 Package | Infineon | 6,465 | Add to BOM |
BSC0909NS | 8-pin TDSON EP-packaged N-channel MOSFET capable of handling 34V and 12A | Infineon | 2,481 | Add to BOM |
BSC0902NS | 8-pin TDSON EP packaged N-channel MOSFET | Infineon | 3,467 | Add to BOM |
BSC052N03LS | OptiMOS MOSFET, 30V, 57A, N-channel, TDSON-8 package | Infineon | 2,746 | Add to BOM |
BSC600N25NS3G | 250V 25A TDSON-8 Package | Infineon Technologies Corporation | 2,525 | Add to BOM |
BSC320N20NS3G | The BSCNSG is designed for demanding power management task | Infineon Technologies Corporation | 3,837 | Add to BOM |
BSC123N08NS3G | Low on-resistance of 0.0123 ohms | Infineon Technologies Corporation | 3,313 | Add to BOM |
BSC110N15NS5 | High-voltage N-channel transistor for efficient power control | Infineon | 2,810 | Add to BOM |
BSC110N06NS3G | TDSON-8 package provides excellent thermal dissipation and reliability | Infineon Technologies Corporation | 2,933 | Add to BOM |
BSC093N15NS5 | Super compact SOpackage for space-saving desi | Infineon | 5,510 | Add to BOM |
BSC060N10NS3G | Power transistor with N-channel MOSFET, capable of handling 100V voltage and 14.9A current in 8-pin TDSON EP package for automated assembly | Infineon Technologies Corporation | 3,686 | Add to BOM |
BSC059N04LSG | MOSFET N-Ch 40V 73A TDSON-8 OptiMOS 3 | Infineon Technologies Corporation | 2,943 | Add to BOM |
BSC059N04LS6 | Compact Pin TDSON Package for space-constrained desig | Infineon Technologies Corporation | 3,789 | Add to BOM |
BSC030N08NS5 | Advanced MOSFET Technology for Reliable Performan | Infineon | 2,284 | Add to BOM |
BSC028N06NS | High-power N-channel MOSFET for efficient motor control and power conversion application | Infineon | 2,122 | Add to BOM |
BSC016N06NS | This 8-pin TDSON package provides high current handling | Infineon | 3,836 | Add to BOM |
BSC160N15NS5 | High-speed switching N-channel power transisto | Infineon | 9,908 | Add to BOM |
BSC190N15NS3G | BSC190N15NS3 G Power Switching Device | Infineon | 3,422 | Add to BOM |
BSC030P03NS3G | Transistor MOSFET P-channel 30V with 25.4A in a 8-pin TDSON EP package on tape and reel | Infineon | 3,862 | Add to BOM |
BSC014N06NS | N-Channel 60 V 30A (Ta), 100A (Tc) 2.5W (Ta), 156W (Tc) Surface Mount PG-TDSON-8-17 | Infineon | 3,958 | Add to BOM |
BSC021N08NS5 | MOSFET TRENCH 40<-<100V | Infineon Technologies Corporation | 3,789 | Add to BOM |
BSC027N04LSG | N-Channel 40 V 24A (Ta), 100A (Tc) 2.5W (Ta), 83W (Tc) Surface Mount PG-TDSON-8-1 | Infineon Technologies Corporation | 2,603 | Add to BOM |
BSC220N20NSFD | MOSFET TRENCH >=100V | Infineon Technologies Corporation | 3,712 | Add to BOM |
BSC034N03LSG | High-power N-channel MOSFET for demanding application | Infineon | 3,743 | Add to BOM |
BSC0901NS | BSC0901NS Power FET: Operating as an N-channel Metal-oxide Semiconductor Field-Effect Transistor | Infineon | 2,000 | Add to BOM |
BSC082N10LS G | Technical Information: BSC082N10LS G MOSFETs with TDSON-8-EP(5x6) packaging, meeting ROHS standards | Infineon Technologies | 5,116 | Add to BOM |
BSC017N04NS G | With a 40V voltage tolerance and a 30A current handling capability | Infineon Technologies | 9,261 | Add to BOM |
BSC340N08NS3G | With a voltage tolerance of up to 80V and a current capacity of 7A | Infineon Technologies Corporation | 2,482 | Add to BOM |
BSC190N12NS3G | The BSC190N12NS3 G MOSFET features a drain-source resistance of 19 milliohms at a gate-source voltage of 10 volts | Infineon Technologies Corporation | 3,536 | Add to BOM |
BSC100N06LS3G | N-channel 60V 12A Transistor with TDSON EP 8-Pin Packaging | Infineon Technologies Corporation | 2,341 | Add to BOM |
BSC096N10LS5 | Low-voltage MOSFETs designed for high-reliability applications" | Infineon Technologies Corporation | 3,533 | Add to BOM |
BSC093N04LSG | Small signal transistor ideal for amplifying signals | Infineon Technologies Corporation | 2,647 | Add to BOM |
BSC0805LS | Field-effect transistor with TRENCH technology for high voltage applications | Infineon Technologies Corporation | 3,231 | Add to BOM |
BSC072N03LDG | Product BSC072N03LD G is a Dual N-Channel Power Mosfet with a low on-state resistance of 7.2 mOhm | Infineon Technologies Corporation | 3,792 | Add to BOM |
BSC032N04LS | High current, low ohmic resistance N-channel FET | Infineon | 2,977 | Add to BOM |
BSC025N03MSG | Advanced power management solutions available | Infineon Technologies Corporation | 3,359 | Add to BOM |
BSC022N04LS6 | Low-loss, high-current MOSFET suitable for automotive and industrial application | Infineon Technologies Corporation | 2,668 | Add to BOM |
BSC022N03SG | Robust (Ta) and (Tc) rated for reliable operation in extreme temperature | Infineon Technologies Corporation | 2,240 | Add to BOM |
BSC22DN20NS3 G | OptiMOS 3 MOSFET featuring N-channel architecture, designed to support up to 200 volts and 7 amps, enclosed in a TDSON-8 package | Infineon | 5,328 | Add to BOM |
ISC0703NLS | Power Field-Effect Transistor, | Infineon Technologies Corporation | 2,141 | Add to BOM |
ISC060N10NM6 | ISC060N10NM6 OptiMOS™ 6 100 V in normal level is setting the new technology standard in the field of discrete power MOSFETs. Compared to alternative products, Infineon’s leading thin wafer technology is enabling significant performance benefits.Infineon’s OptiMOS™ 6 industrial power MOSFET 100 V is designed for high switching frequency application such as telecom and server power supply, but also the ideal choice for other applications such as solar, power tools and drones.In SuperSO8 package it achieves ~20% improvements in on-state resistance (RDS(on)) and 30% better figure of merits (FOM - RDS(on) x Qg and Qgd) compared to the previous technology OptiMOS™ 5. This enables designers to increase efficiency, allowing easier thermal design and less paralleling, leading to system cost reduction. | Infineon Technologies Corporation | 3,419 | Add to BOM |
BSC010N04LS6 | MOSFET TRENCH <= 40V | Infineon Technologies Corporation | 2,706 | Add to BOM |
BSC014N06NST | MOSFET TRENCH 40<-<100V | Infineon Technologies Corporation | 3,725 | Add to BOM |
BSC019N06NS | MOSFET TRENCH 40<-<100V | Infineon Technologies Corporation | 2,193 | Add to BOM |
BSC026N04LS | MOSFET TRENCH <= 40V | Infineon Technologies Corporation | 2,282 | Add to BOM |
BSC027N10NS5 | MOSFET TRENCH >=100V | Infineon Technologies Corporation | 2,802 | Add to BOM |
BSC027N06LS5 | MOSFET TRENCH 40<-<100V | Infineon Technologies Corporation | 3,005 | Add to BOM |
BSC050N10NS5 | MOSFET TRENCH >=100V | Infineon Technologies Corporation | 2,947 | Add to BOM |
Other Package