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TO-204AE

(16 parts in total)
Mfr.Part# Description Manufacturer In Stock Operation
JANTX2N6766 Power MOSFET with N-channel configuration, capable of handling up to 200V and 30A current, housed in a TO-3 package Microsemi Corporation 6,617 Add to BOM
IRF150 Robust and Reliable for High-Temperature Applicatio Infineon 9,663 Add to BOM
IRF140 100V Single N-Channel Hi-Rel MOSFET in a TO-204AE package - A IRF140 with Hermetic PackagingBenefits TT Electronics 9,323 Add to BOM
MJ11028 Silicon NPN Darlington Power Transistor NTE Electronics, Inc 5,692 Add to BOM
MJ11033G Bipolar (BJT) Transistor PNP - Darlington 120 V 50 A 300 W Through Hole TO-204 (TO-3) Fairchild Semiconductor 6,089 Add to BOM
MJ11028G Bipolar (BJT) Transistor NPN - Darlington 60 V 50 A 300 W Through Hole TO-204 (TO-3) Sanyo 9,744 Add to BOM
IRF460 Advanced power electronics component for high-voltage DC-DC converters, motor drives, and power supplies Infineon 2,687 Add to BOM
IRF250 Robust package design features a 200V rated voltage and 30A current handling Infineon 6,405 Add to BOM
IRF240 Power electronics solution for motor drives, lighting systems, and power supplies Infineon 6,435 Add to BOM
JANTX2N6764 38 A 100 V 0.065 ohm N-CHANNEL Si POWER MOSFET TO-204 Microsemi Corporation 5,620 Add to BOM
JANTX2N6770 N-Channel 500 V 12A (Tc) 4W (Ta), 150W (Tc) Through Hole TO-3 Microsemi Corporation 5,886 Add to BOM
JANTXV2N5686 Advanced TO-3 package design for reliable operation Microchip Technology 7,966 Add to BOM
JANTXV2N6764 Compact TO-E package allows for efficient PCB layout and minimal space usag Infineon 6,021 Add to BOM
JANTX2N5686 V, A, and of robust power handlin Microchip Technology 6,281 Add to BOM
GE10020 Bipolar (BJT) Transistor NPN - Darlington 300 V 60 A 250 W Through Hole TO-204AE Harris Corporation 9,579 Add to BOM
IXGM20N60 IGBT 600 V 40 A 150 W Through Hole TO-204AE IXYS 5,156 Add to BOM