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TO-247-4
(102 parts in total)| Mfr.Part# | Description | Manufacturer | In Stock | Operation |
|---|---|---|---|---|
| FGH40T120SQDNL4 | GBT Transistor 1200V 160A with N-Channel | Onsemi | 9,458 | Add to BOM |
| NTH4L020N120SC1 | TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 20 milliohms, 1200 volts, M1 | Onsemi | 3,076 | Add to BOM |
| IMZ120R030M1HXKSA1 | Product IMZ120R030M1HXKSA1 is a N Channel TO-247-4-1 MOSFET with a voltage rating of 1 | Infineon | 9,458 | Add to BOM |
| IMZ120R030M1H | MOSFET SIC DISCRETE | Infineon | 9,458 | Add to BOM |
| G3R20MT12K | Silicon Carbide MOSFET N Channel Enhancement Mode | GeneSiC Semiconductor | 9,458 | Add to BOM |
| LSIC1MO120G0025 | High-power switching transistor with low RDS(on) for high-frequency applications | Littelfuse Inc. | 7,480 | Add to BOM |
| DMWS120H100SM4 | MOSFET SiC with BVDSS greater than 1000V, TO247-4 package in a tube of 30 pieces | Diodes Incorporated | 7,214 | Add to BOM |
| MSC035SMA070B4 | Silicon carbide MOSFET rated at 700 volts and 35 milliohms in TO-247-4 package | Microchip Technology | 9,072 | Add to BOM |
| MSC025SMA330B4 | MOSFET SIC 3300 V 25 mOhm TO-247-4 | Microchip | 9,458 | Add to BOM |
| MSC040SMA120B4 | N-Channel 1200 V 66A (Tc) 323W (Tc) Through Hole TO-247-4 | Microchip Technology | 7,369 | Add to BOM |
| MSC025SMA120B4 | N-Channel 1200 V 103A (Tc) 500W (Tc) Through Hole TO-247-4 | Microchip | 9,458 | Add to BOM |
| MSC080SMA330B4 | 3300V 41A N-Channel MOSFET Transistor TO-247 4-Pin Tube | Microchip | 9,458 | Add to BOM |
| MSC400SMA330B4 | MOSFET MOSFET SIC 3300 V 400 mOhm TO-247-4 | Microchip Technology | 9,212 | Add to BOM |
| MSC017SMA120B4 | Discrete Semiconductor Modules MOSFET SIC 1200 V 17 mOhm TO-247-4 | Microchip Technology | 5,718 | Add to BOM |
| MSC015SMA070B4 | Silicon Carbide N-Channel Power MOSFET, product code MSC015SMA070B4 | Microchip Technology | 6,226 | Add to BOM |
| MSC035SMA170B4 | N-Channel 1700 V 68A (Tc) 370W (Tc) Through Hole TO-247-4 | Microchip Technology | 8,784 | Add to BOM |
| E3M0032120K | Gen 3 Automotive 1200V 32mohm MOSFET SiC TO-247-4 | Wolfspeed, Inc | 6,651 | Add to BOM |
| UJ4SC075006K4S | High-voltage JFET with 6 milliohm on-resistance, Silicon Carbide technology | Qorvo | 7,116 | Add to BOM |
| FGH75T65SQDNL4 | IGBT with Field Stop IV/4 Lead | Onsemi | 9,458 | Add to BOM |
| FGH75T65SHDTL4 | FGH75T65SHDTL4 is an N-channel IGBT with a voltage rating of 650V and a current rating of 150A | Onsemi | 9,458 | Add to BOM |
| IMZ120R045M1XKSA1 | Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 5.6pF 50volts C0G +/-0.5pF | Infineon Technologies | 9,212 | Add to BOM |
| NVH4L045N065SC1 | N-Channel 650 V 55A (Tc) 187W (Tc) Through Hole TO-247-4L | onsemi | 9,458 | Add to BOM |
| NVH4L015N065SC1 | N-Channel 650 V 142A (Tc) 500W (Tc) Through Hole TO-247-4L | onsemi | 9,458 | Add to BOM |
| G3R20MT17K | Field-Effect Transistor for Power Applications G3R20MT17K | GeneSiC Semiconductor | 9,458 | Add to BOM |
| E3M0060065K | MOSFET with a voltage rating of 650 volts, employing Silicon Carbide technology | Wolfspeed | 9,458 | Add to BOM |
| E3M0075120K | ROHS compliant, 15V gate-source voltage | Wolfspeed, Inc. | 9,066 | Add to BOM |
| UF3C120080K4S | 1200V-80mΩ Silicon Carbide Field-Effect Transistor (SiC FET) | Qorvo | 9,458 | Add to BOM |
| C3M0120065K | TO-247 4-Pin Silicon Carbide N-Channel MOSFET 650V 22A | Wolfspeed | 9,458 | Add to BOM |
| C3M0021120K | N-channel Mosfet suitable for high-power electronics, with a voltage rating of 1 | WOLFSPEED INC | 7,023 | Add to BOM |
| UF4SC120023K4S | This MOSFET, UF4SC120023K4S, offers high performance with its null gate voltage and is suitable for a variety of applications | Qorvo | 8,353 | Add to BOM |
| SCT3060ARC14 | N-Channel MOSFET | Rohm Semiconductor | 9,011 | Add to BOM |
| C3M0045065K | Silicon Carbide N-Channel Transistor rated at 650V and 49A in TO-247 Package | Wolfspeed, Inc. | 6,499 | Add to BOM |
| UF3C120150K4S | Part number UF3C120150K4S | Qorvo | 9,458 | Add to BOM |
| E3M0021120K | Automotive MOSFET SiC Gen 3 TO-247-4 1200V 21mohm | Wolfspeed, Inc. | 5,136 | Add to BOM |
| UJ4SC075011K4S | Advanced SiC FET technology for reliable and efficient applications | QORVO | 8,875 | Add to BOM |
| UJ4C075033K4S | High-voltage JFET with Silicon Carbide technology and low on-state resistance | Qorvo | 9,755 | Add to BOM |
| SCT3030ARC14 | N-Channel MOSFET Transistor, 650V, 70A, TO-247 Package | Rohm Semiconductor | 9,247 | Add to BOM |
| UF3SC120009K4S | UF3SC120009K4S: Silicon Carbide FET rated at 1200 Volts with 8.6 milliohm On-Resistance | Qorvo | 8,836 | Add to BOM |
| UF3SC120016K4S | TO-247-4L package containing a 1200V SiC FET with 16mΩ | Qorvo | 9,309 | Add to BOM |
| UF3C120040K4S | Switching-performance SiC FETs | Qorvo | 7,880 | Add to BOM |
| G3R30MT12K | Silicon Carbide MOSFET with 1200V voltage rating and 30mΩ on-resistance, packaged in TO-247-4 format as G3R30MT12K | GeneSiC Semiconductor | 9,458 | Add to BOM |
| G3R75MT12K | Product G3R75MT12K is a MOSFET designed to operate at 1 | GeneSiC Semiconductor | 9,458 | Add to BOM |
| C2M0045170P | Silicon carbide N-channel transistor with 1.7KV voltage rating and 72A current capacity, packaged in bulk TO-247 format | Wolfspeed | 9,458 | Add to BOM |
| G3R12MT12K | High-Power Field-Effect Transistor | GeneSiC Semiconductor | 9,458 | Add to BOM |
| UF3C065030K4S | UF3C065030K4S: 650-volt Silicon Carbide FET featuring a 27-milliohm resistance | Qorvo | 5,867 | Add to BOM |
| C3M0065100K | Robust and reliable 1kV MOSFET for harsh environments | WOLFSPEED INC | 7,295 | Add to BOM |
| C3M0120100K | High-voltage MOSFET with 120mOhm RDS(ON) and G3 silicon carbide technology housed in TO-247-4 package | Wolfspeed, Inc. | 6,066 | Add to BOM |
| IKZ75N65EL5 | TO-247-4 IGBTs ROHS | infineon | 9,470 | Add to BOM |
| IKZ75N65EH5 | IGBT Silicon Transistor Chip, 650 Volts, 90 Amperes, TO-247 Package | infineon | 5,187 | Add to BOM |
| STC03DE170HP | Hybrid Emitter Switched Bipolar Transistor (STC03DE170HP) | STMicroelectronics | 9,961 | Add to BOM |
Other Package