Orders Over
$5000
2SD1111
Small Signal NPN Transistor, 700mA, 50V, TO-92 Enclosure
![ISO14001](/img/about/iso14001.png)
![ISO9001](/img/about/iso9001.png)
![DUNS](/img/about/duns.png)
Brands: Onsemi
Mfr.Part #: 2SD1111
Datasheet: 2SD1111 Datasheet (PDF)
Package/Case: TO-226-3
RoHS Status:
Stock Condition: 8,705 pcs, New Original
Product Type: Single Bipolar Transistors
Warranty: 1 Year Ovaga Warranty - Find Out More
0
1
*All prices are in USD
Qty | Unit Price | Ext Price |
---|---|---|
1 | $1.169 | $1.169 |
200 | $0.453 | $90.600 |
500 | $0.437 | $218.500 |
1000 | $0.430 | $430.000 |
In Stock: 8,705 PCS
2SD1111 General Description
Bipolar (BJT) Transistor NPN - Darlington 50 V 700 mA 200MHz 600 mW Through Hole 3-NP
![2SD1111 2SD1111](/files/uploads/product/b/34f72245600e4d77908e7f90bc9208d1.webp)
Features
- Low power consumption
- High gain amplifier
- Suitable for analog applications
Application
- Boost audio signals
- Provide steady power
- Detect changes instantly
- Switch circuits smoothly
- Illuminate with LEDs
Specifications
Parameter | Value | Parameter | Value |
---|---|---|---|
Packaging | Bulk | Part Status | Active |
Transistor Type | NPN - Darlington | Current - Collector (Ic) (Max) | 700 mA |
Voltage - Collector Emitter Breakdown (Max) | 50 V | Vce Saturation (Max) @ Ib, Ic | 1.2V @ 100µA, 100mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) | DC Current Gain (hFE) (Min) @ Ic, Vce | 5000 @ 50mA, 2V |
Power - Max | 600 mW | Frequency - Transition | 200MHz |
Operating Temperature | 150°C (TJ) | Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
![]() |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
![]() |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
![]() |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
![]() |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
![]() |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
![]() |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
![]() |
Wire Transfer | charge US$30.00 banking fee. |
![]() |
Paypal | charge 4.0% service fee. |
![]() |
Credit Card | charge 3.5% service fee. |
![]() |
Western Union | charge US.00 banking fee. |
![]() |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
-
Step1 :Product
-
Step2 :Vacuum packaging
-
Step3 :Anti-static bag
-
Step4 :Individual packaging
-
Step5 :Packaging boxes
-
Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
-
The 2SD1111 is a bipolar junction NPN transistor designed for general purpose amplifier and switching applications. It has a maximum collector current of 1.5A and a maximum collector-base voltage of 80V. The transistor is typically used in low power audio amplifiers, voltage regulators, and motor control circuits.
-
Equivalent
Equivalent products of the 2SD1111 chip include BD437, BD697, 2SD1460, and BC327. These transistors are all NPN silicon epitaxial transistors commonly used in audio amplifier circuits, voltage regulators, and general purpose switching applications. They have similar characteristics and performance as the 2SD1111 chip. -
Features
The 2SD1111 is a silicon NPN epitaxial planar transistor designed for low frequency power amplifier applications. It has a maximum collector current of 1.5A, a maximum collector power dissipation of 0.75W, and a DC current gain (hFE) of 40-250. The transistor also has a low saturation voltage and high current gain bandwidth product. -
Pinout
The 2SD1111 is a PNP bipolar junction transistor with a TO-126 package. It has 3 pins: the emitter (E), base (B), and collector (C). Its function is to amplify and switch electronic signals. The pinout arrangement is typically Emitter connected to pin 1, Base to pin 2, and Collector to pin 3. -
Manufacturer
The 2SD1111 is manufactured by Toshiba Corporation. Toshiba is a Japanese multinational conglomerate company specializing in a diverse range of products and services, including information technology, electronic devices, power systems, industrial and social infrastructure systems, and home appliances. They are known for their innovation in various industries and their high-quality electronic components. -
Application Field
The 2SD1111 is a general-purpose NPN transistor commonly used in audio amplifiers, switching circuits, and power supply applications. It can also be used in high-frequency oscillators, voltage regulators, motor control circuits, and other electronic devices that require medium power handling capabilities. -
Package
The 2SD1111 chip comes in a TO-220F package type, with a through-hole form. The size of the chip is typically 3.8mm x 10mm x 4.9mm.
We provide high quality products, thoughtful service and after sale guarantee
-
We have rich products, can meet your various needs.
-
Minimum order quantity starts from 1pcs.
-
Lowest international shipping fee starts from $0.00
-
365 days quality guarantee for all products