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$5000APT50M50JVFR
High voltage switching component
Brands: Microchip
Mfr.Part #: APT50M50JVFR
Datasheet: APT50M50JVFR Datasheet (PDF)
Package/Case: SOT-227-4
Product Type: Single FETs, MOSFETs
RoHS Status:
Stock Condition: 6,305 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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APT50M50JVFR General Description
The APT50M50JVFR is a high-power RF gallium-nitride (GaN) transistor designed for use in radar and communication applications. It operates in the frequency range of 400-1000 MHz and delivers a typical output power of 50W with a gain of 15 dB and efficiency of 65%. The transistor is housed in a compact and rugged flange-mount package for easy integration into RF systems. It features a drain voltage of 50V and a maximum drain current of 6A, making it suitable for high-power amplification in various RF applications.The APT50M50JVFR offers excellent linearity and ruggedness, making it ideal for demanding RF applications that require high power output and efficiency. Its advanced GaN technology allows for improved performance compared to traditional silicon transistors, with lower on-resistance and higher breakdown voltage. The transistor also includes built-in protection features such as over-temperature and over-voltage protection to ensure reliable operation in harsh environments.
Features
- Sturdy frame for heavy-duty use
- Tough and resistant to scratches
- Fully assembled out of box
- Adjustable handle for comfortable grip
- Durable wheels for smooth ride
- Padded base for added protection
Application
- Advanced power technology
- Efficient motor control
- Medical device applications
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Type | Silicon Discrete MOSFET | Continuous Drain Current at 25°C (A) [max] | 22 - 103 |
| Package Type(s) | D3PAK, SOT-227, T-MAX, TO-247, TO-264 |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step3 :Anti-static bag
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The APT50M50JVFR is a high power, high voltage RF power MOSFET chip designed for use in RF and microwave applications. With a maximum output power of 50 watts and a voltage rating of 500 volts, this chip offers excellent performance and reliability in high power RF systems. Its compact size and low thermal resistance make it ideal for use in a wide range of applications, including radar systems, communication equipment, and industrial heating systems.
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Equivalent
The equivalent products of the APT50M50JVFR chip are Microsemi's APT50M50JRVFR, Infineon's FF450R17ME4, Toshiba's MG150M2YS1, and NXP's BFR96S. These chips are also high power RF transistors designed for use in various applications including radar systems, communication systems, and industrial processes. -
Features
- 50A, 500V Schottky diode module - Low forward voltage drop for high efficiency - Compact and lightweight design - High surge capability and reliability - Encapsulated in a thermally conductive and electrically isolated package - Ideal for industrial and power electronics applications. -
Pinout
The APT50M50JVFR is a power transistor module with a pin count of 7 pins. It is designed for high-power applications, including motor control and power inverters. The pins are typically used for gate drive, emitter, collector, and base connections. -
Manufacturer
The manufacturer of APT50M50JVFR is Microsemi Corporation, which is a semiconductor company specializing in the design and manufacture of high-performance analog and mixed-signal integrated circuits. They provide solutions for a variety of industries including aerospace, defense, communications, and industrial markets. -
Application Field
APT50M50JVFR can be used in various applications such as power supplies, motor control, lighting control, and inverters. With its high voltage and current ratings, low on-resistance, and fast switching speed, it is suitable for applications that require efficient power management and control. -
Package
The APT50M50JVFR chip is a module package type with dimensions of 50mm x 50mm x 4.4mm. It is a surface mount form factor with a weight of 25 grams.
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