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BD675G 48HRS

Bipolar (Bjt) Single Transistor, Darlington, Npn, 45 V, 1 Mhz, 40 W, 4 A, 750 Rohs Compliant: Yes

ISO14001 ISO9001 DUNS

Brands: ROCHESTER ELECTRONICS LLC

Mfr.Part #: BD675G

Datasheet: BD675G Datasheet (PDF)

Package/Case: TO-225-3

RoHS Status:

Stock Condition: 9,963 pcs, New Original

Product Type: Single Bipolar Transistors

Warranty: 1 Year Ovaga Warranty - Find Out More

Pricing

*All prices are in USD

Qty Unit Price Ext Price
1 $0.448 $0.448
200 $0.173 $34.600
500 $0.167 $83.500
1000 $0.164 $164.000

In Stock: 9,963 PCS

- +

Quick Quote

Please submit RFQ for BD675G or email to us: Email: [email protected], we will contact you within 12 hours.

BD675G General Description

Meet the BD675G Darlington Transistor, a versatile NPN transistor designed for high-voltage applications. With a collector-emitter voltage of 45V and a transition frequency of 1MHz, this transistor delivers reliable performance in a range of operating conditions. The BD675G has a power dissipation of 40W and a DC collector current of 4A, making it an ideal choice for power amplification and switching circuits. Plus, with a DC current gain of 750hFE and a TO-225AA package, it's easy to integrate into your designs

Features

  • Low Voltage Operation
  • Fast Switching Time
  • High Frequency Stable
  • Silicon Construction
  • Rugged Operating Conditions
  • Efficient Thermal Management

Application

AMPLIFIER

Specifications

Parameter Value Parameter Value
Pbfree Code Yes Rohs Code Yes
Part Life Cycle Code Active Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Part Package Code TO-225AA Package Description ROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN
Pin Count 3 Manufacturer Package Code CASE 77-09
Reach Compliance Code Collector Current-Max (IC) 4 A
Collector-Emitter Voltage-Max 45 V Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE) 750 JEDEC-95 Code TO-225AA
JESD-30 Code R-PSFM-T3 JESD-609 Code e3
Moisture Sensitivity Level NOT SPECIFIED Number of Elements 1
Number of Terminals 3 Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type NPN
Qualification Status COMMERCIAL Surface Mount NO
Terminal Finish MATTE TIN Terminal Form THROUGH-HOLE
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) 40
Transistor Application AMPLIFIER

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The BD675G is a NPN power transistor commonly used in electronic circuits for high-power amplification and switching applications. It has a maximum collector current of 4A and a maximum collector-emitter voltage of 45V. This transistor is known for its high power dissipation capability and low saturation voltage, making it ideal for use in audio amplifiers, power supplies, and other high-power applications.
  • Equivalent

    The equivalent products of the BD675G chip are BD675, TIP142, and 2SC3835 transistors. These transistors have similar specifications and can be used interchangeably in many applications.
  • Features

    The BD675G is a NPN epitaxial silicon transistor designed for use in general-purpose amplifier and switching applications. It has a maximum collector current of 4A and a maximum collector-emitter voltage of 45V. The transistor is housed in a TO-126 package with a power dissipation of 65W.
  • Pinout

    The BD675G is a PNP silicon power transistor with a pin count of three (base, emitter, collector). It is commonly used for high power amplification or switching applications in electronic circuits.
  • Manufacturer

    The BD675G is manufactured by ON Semiconductor. ON Semiconductor is a global supplier of semiconductor-based solutions, offering a comprehensive portfolio of energy efficient power management, analog, sensors, logic, timing, connectivity, discrete, and custom devices. The company serves a broad range of markets, including automotive, consumer, industrial, and communications.
  • Application Field

    BD675G is a PNP silicon power transistor suitable for power amplifiers, high fidelity audio circuits, and general-purpose switching applications. It can be used in audio amplifiers, voltage regulators, motor control circuits, and other high-power applications requiring high current and voltage ratings.
  • Package

    The BD675G chip is a PNP power transistor with a TO-126 package type. It has a form of a single semiconductor die with three terminals (base, collector, and emitter) attached to an external heat sink. The size of the package is approximately 10mm x 15mm x 4mm.

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  • quantity

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