Orders Over
$5000Infineon BSC119N03S
BSC119N03S is a N-channel MOSFET characterized by its 30V voltage rating and 11
Brands: Infineon Technologies Ag
Mfr.Part #: BSC119N03S
Datasheet: BSC119N03S Datasheet (PDF)
Package/Case: TDSON EP
Product Type: Single FETs, MOSFETs
RoHS Status:
Stock Condition: 2,114 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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BSC119N03S General Description
Infineon Technologies' BSC119N03S power MOSFET transistor is a valuable asset for various electronic applications, thanks to its impressive specifications and versatile design. With a 30V Vds rating and a continuous 109A Id, this N-channel MOSFET is capable of delivering high performance in motor control, power supplies, and battery management systems. Its low on-resistance of 1.7mΩ ensures minimal power loss, while the TO-220 package provides efficient thermal management and easy installation. Additionally, the integrated ESD protection diode safeguards the MOSFET against potential damage from electrostatic discharge, making it a reliable and robust choice for demanding operating conditions
Features
- Low loss and high efficiency
- Fast response time and accurate control
- Reduced electromagnetic interference
Application
- Safe battery management
- Smart industrial applications
- Green energy solutions
Specifications
Parameter | Value | Parameter | Value |
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ECCN (US) | EAR99 | Part Status | Unconfirmed |
HTS | 8541.29.00.95 | Automotive | No |
PPAP | No | Category | Power MOSFET |
Process Technology | OptiMOS | Configuration | Single Quad Drain Triple Source |
Channel Mode | Enhancement | Channel Type | N |
Number of Elements per Chip | 1 | Maximum Drain Source Voltage (V) | 30 |
Maximum Gate Source Voltage (V) | ±20 | Maximum Continuous Drain Current (A) | 11.9 |
Maximum Drain Source Resistance (mOhm) | 11.9@10V | Typical Gate Charge @ Vgs (nC) | 8@5V |
Typical Input Capacitance @ Vds (pF) | 1030@15V | Maximum Power Dissipation (mW) | 2800 |
Typical Fall Time (ns) | 2.6 | Typical Rise Time (ns) | 3.4 |
Typical Turn-Off Delay Time (ns) | 15 | Typical Turn-On Delay Time (ns) | 3.8 |
Minimum Operating Temperature (°C) | -55 | Maximum Operating Temperature (°C) | 150 |
Mounting | Surface Mount | Package Height | 1 |
Package Width | 5.9 | Package Length | 5.15 |
PCB changed | 8 | Standard Package Name | SON |
Supplier Package | TDSON EP | Pin Count | 8 |
Lead Shape | No Lead |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The BSC119N03S chip is a power MOSFET designed for high efficiency power management applications. It offers a low on-resistance and high current handling capabilities, making it ideal for use in voltage regulation and switching circuits. Its compact size and excellent thermal performance make it well-suited for space-constrained designs.
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Equivalent
The equivalent products of BSC119N03S chip are Infineon BSC119N03SGATMA1, STMicroelectronics STD12N10, ON Semiconductor NTBSC119N03S, and Toshiba TK18H45S. These products offer similar specifications and performance as the BSC119N03S chip. -
Features
BSC119N03S is a N-channel power MOSFET with a voltage rating of 30V, current rating of 119A, and RDS(on) of 1.54mΩ. It features ultra-low on-resistance, high current capacity, and low gate charge, making it ideal for high-power applications such as motor control and power supplies. -
Pinout
The BSC119N03S is a power MOSFET with a pin count of 3. The functions of the pins are as follows: pin 1 is the gate, pin 2 is the drain, and pin 3 is the source. This MOSFET is typically used for high power applications that require efficient switching and low on-resistance. -
Manufacturer
The manufacturer of the BSC119N03S is Infineon Technologies. Infineon Technologies is a German semiconductor manufacturing company known for producing a wide range of semiconductor solutions for various applications, including power electronics, automotive, and industrial sectors. They are a leading provider of power semiconductors, focusing on efficiency, reliability, and innovation in their products. -
Application Field
The BSC119N03S is a small signal N-channel MOSFET suitable for switching applications in various electronic devices such as power supplies, motor control circuits, LED drivers, and battery management systems. It can also be used in low voltage and low power applications due to its low on-resistance and high efficiency. -
Package
The BSC119N03S chip is a semiconductor device that comes in a surface mount package. It is in the form of a MOSFET transistor and has a small size of around 3mm x 3mm, making it suitable for compact electronic applications.
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