DN3135N8-G

DN3135N8-G General Description

As a state-of-the-art low threshold depletion-mode transistor, the DN3135N8-G sets a new standard in electronic components. Its advanced vertical DMOS structure and well-established silicon-gate manufacturing process ensure unparalleled power handling capabilities and reliability. With characteristics that include high input impedance, low input capacitance, and fast switching speeds, this transistor is a versatile solution for switching and amplifying applications. Its resistance to thermal runaway and thermally-induced secondary breakdown further enhances its appeal, making it a vital component for demanding electronic projects

Features

• Enhanced data security protocols
• Integrated diagnostic tools
• Automated error correction

Specifications

Parameter	Value	Parameter	Value
Product Status	Active	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	350 V
Current - Continuous Drain (Id) @ 25°C	135mA (Tj)	Drive Voltage (Max Rds On, Min Rds On)	0V
Rds On (Max) @ Id, Vgs	35Ohm @ 150mA, 0V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	120 pF @ 25 V	FET Feature	Depletion Mode
Power Dissipation (Max)	1.3W (Ta)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Supplier Device Package	TO-243AA (SOT-89)
Package / Case	TO-243AA