Orders Over
$5000FQP47P06
High-power P-channel MOSFET for reliable switching applications
![ISO14001](/img/about/iso14001.png)
![ISO9001](/img/about/iso9001.png)
![DUNS](/img/about/duns.png)
Brands: Onsemi
Mfr.Part #: FQP47P06
Datasheet: FQP47P06 Datasheet (PDF)
Package/Case: TO-220-3
Product Type: Single FETs, MOSFETs
RoHS Status:
Stock Condition: 5,997 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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FQP47P06 General Description
ON Semiconductor's FQP47P06 MOSFET stands out for its advanced design that prioritizes efficiency and performance. Thanks to its enhanced planar stripe and DMOS technology, this power MOSFET offers a reduced on-state resistance and exceptional switching capabilities. This makes it a versatile component that can be utilized in various applications such as switched mode power supplies, audio amplifiers, DC motor control, and variable switching power systems. Engineers can rely on the FQP47P06 to deliver consistent and reliable performance in demanding environments, making it a valuable asset for design projects that require high efficiency and robust operation
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Features
- Low inductance package
- High current rating (Typ. 30A)
- SMT and through-hole options available
- Operating temperature range -40°C to 125°C
Application
- Multi-Room Audio Systems
- Smartphone Projectors
- Virtual Reality Headsets
Specifications
Parameter | Value | Parameter | Value |
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Product Category | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | Through Hole | Package / Case | TO-220-3 |
Transistor Polarity | P-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 60 V | Id - Continuous Drain Current | 47 A |
Rds On - Drain-Source Resistance | 26 mOhms | Vgs - Gate-Source Voltage | - 25 V, + 25 V |
Vgs th - Gate-Source Threshold Voltage | 4 V | Qg - Gate Charge | 110 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 160 W | Channel Mode | Enhancement |
Tradename | QFET | Series | FQP47P06 |
Brand | onsemi / Fairchild | Configuration | Single |
Fall Time | 195 ns | Forward Transconductance - Min | 21 S |
Height | 16.3 mm | Length | 10.67 mm |
Product Type | MOSFET | Rise Time | 450 ns |
Factory Pack Quantity | 50 | Subcategory | MOSFETs |
Transistor Type | 1 P-Channel | Type | MOSFET |
Typical Turn-Off Delay Time | 100 ns | Typical Turn-On Delay Time | 50 ns |
Width | 4.7 mm | Part # Aliases | FQP47P06_NL |
Unit Weight | 0.068784 oz |
Shipping
Shipping Type | Ship Fee | Lead Time | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The FQP47P06 is a power MOSFET chip used primarily for switching applications. It is designed to handle high voltage and high current levels, making it suitable for various power management tasks. The chip offers low on-resistance and fast switching performance, making it efficient and reliable.
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Equivalent
Some equivalent products of the FQP47P06 chip include the IRF640B, IRF7470PBF, and IPP047N06L3G. -
Features
The FQP47P06 is a P-channel MOSFET transistor with a maximum drain-source voltage of -60V, a maximum drain current of -38A, and a low on-resistance. It has a TO-220 package and is designed for use in high-speed switching applications, such as power supplies and motor control circuits. -
Pinout
The FQP47P06 is a MOSFET transistor with three pins: gate (G), drain (D), and source (S). The gate pin is used to control the flow of current between the drain and source pins. It has a pin count of 3. -
Manufacturer
The FQP47P06 is manufactured by Fairchild Semiconductor. It is a company that specializes in the design, production, and distribution of electronic components such as transistors, integrated circuits, and power management devices. Fairchild Semiconductor is recognized as a global leader in the semiconductor industry, providing innovative solutions for various applications including automotive, industrial, and consumer electronics. -
Application Field
The FQP47P06 is a power MOSFET transistor commonly used in applications for power supplies, motor controls, and DC/DC converters. It is also used in automotive, industrial, and consumer electronics to efficiently switch high voltages and currents. -
Package
The package type of the FQP47P06 chip is TO-220.
We provide high quality products, thoughtful service and after sale guarantee
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Minimum order quantity starts from 1pcs.
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365 days quality guarantee for all products