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FQP7N80C
High-performance Power MOSFET in a TO-220 package, suitable for N-Channel operation with a current rating of 7 A and a low on-resistance of 1.9 Ω
Brands: Onsemi
Mfr.Part #: FQP7N80C
Datasheet: FQP7N80C Datasheet (PDF)
Package/Case: TO-220-3
RoHS Status:
Stock Condition: 5,921 pcs, New Original
Product Type: Single FETs, MOSFETs
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $1.225 | $1.225 |
| 10 | $1.053 | $10.530 |
| 30 | $0.958 | $28.740 |
| 100 | $0.851 | $85.100 |
| 500 | $0.803 | $401.500 |
| 1000 | $0.783 | $783.000 |
In Stock: 5,921 PCS
FQP7N80C General Description
Fairchild Semiconductor introduces the FQP7N80C N-Channel enhancement mode power MOSFET, designed with cutting-edge technology to deliver top-notch performance. This MOSFET is constructed using Fairchild Semiconductor’s innovative planar stripe and DMOS technology, ensuring superior efficiency and reliability in various applications
Features
- 6.6A, 800V, RDS(on) = 1.9Ω(Max.) @VGS = 10 V, ID = 3.3A
- Low gate charge ( Typ. 27nC)
- Low Crss ( Typ. 10pF)
- 100% avalanche tested
Application
- Durable desktop
- Energy-efficient printer
- Advanced scanner
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| REACH | Details | Technology | Si |
| Mounting Style | Through Hole | Package / Case | TO-220-3 |
| Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 800 V | Id - Continuous Drain Current | 6.6 A |
| Rds On - Drain-Source Resistance | 1.9 Ohms | Vgs - Gate-Source Voltage | - 30 V, + 30 V |
| Vgs th - Gate-Source Threshold Voltage | 3 V | Qg - Gate Charge | 35 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 167 W | Channel Mode | Enhancement |
| Tradename | QFET | Series | FQP7N80C |
| Brand | onsemi / Fairchild | Configuration | Single |
| Fall Time | 60 ns | Forward Transconductance - Min | 5.5 S |
| Height | 16.3 mm | Length | 10.67 mm |
| Product Type | MOSFET | Rise Time | 100 ns |
| Factory Pack Quantity | 1000 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Type | MOSFET |
| Typical Turn-Off Delay Time | 50 ns | Typical Turn-On Delay Time | 35 ns |
| Width | 4.7 mm | Part # Aliases | FQP7N80C_NL |
| Unit Weight | 0.068784 oz |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The FQP7N80C is a power MOSFET chip commonly used in electronic circuits. It is designed for high power applications, offering low on-resistance and high switching speed. The chip can handle a maximum drain current of 7A and has a voltage rating of 800V. Its compact design and efficient performance make it suitable for various power conversion and control applications.
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Equivalent
The equivalent products of the FQP7N80C chip would include other power MOSFETs with similar specifications and features from various manufacturers such as IRF, Infineon, or STMicroelectronics. Some potential alternatives could be IRFP260N, IPW65R045C7, or STP9NK90Z. -
Features
The FQP7N80C is a power MOSFET transistor with a maximum drain current of 7A, a maximum voltage of 800V, and a low on-resistance. It features a fast switching speed, high reliability, and is ideal for use in high power applications such as switching regulators and high-voltage motor drives. -
Pinout
The FQP7N80C is a power MOSFET transistor with a pin count of three. Its pinout includes a gate pin (G), a drain pin (D), and a source pin (S). The function of this transistor is to control and amplify electrical signals in power applications like switching devices and motor control circuits. -
Manufacturer
The manufacturer of the FQP7N80C is Fairchild Semiconductor. It is a multinational company that specializes in the design, manufacture, and distribution of electronic components used in a wide range of applications including power and signal management, energy-efficient solutions, and mobile devices. -
Application Field
The FQP7N80C is a power MOSFET transistor that can be used in various applications such as power supplies, motor control, lighting systems, and electronic switches. It is designed to handle high voltage and current, making it suitable for applications that require efficient power management and control. -
Package
The FQP7N80C chip is a MOSFET transistor with a TO-220 package type. It has a form factor of single-ended and a size of approximately 10.2mm x 5.3mm x 4.6mm.
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