This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Orders Over

$5000
Get a $50 Discount !

HGT1S20N60C3S9A 48HRS

Product HGT1S20N60C3S9A is an N-Channel IGBT with a 45A, 600V rating

ISO14001 ISO9001 DUNS

Brands: Onsemi

Mfr.Part #: HGT1S20N60C3S9A

Datasheet: HGT1S20N60C3S9A Datasheet (PDF)

Package/Case: D2PAK-3

RoHS Status:

Stock Condition: 6,141 pcs, New Original

Product Type: Single IGBTs

Warranty: 1 Year Ovaga Warranty - Find Out More

Pricing

*All prices are in USD

Qty Unit Price Ext Price
1 $7.116 $7.116
200 $2.754 $550.800
500 $2.657 $1328.500
800 $2.610 $2088.000

In Stock: 6,141 PCS

- +

Quick Quote

Please submit RFQ for HGT1S20N60C3S9A or email to us: Email: [email protected], we will contact you within 12 hours.

HGT1S20N60C3S9A General Description

In conclusion, the HGT1S20N60C3S9A is a high-quality IGBT module that delivers exceptional performance and reliability. Its advanced features, including a fast recovery diode and thermal management system, make it a standout choice for high-power applications. Upgrade your power systems with the HGT1S20N60C3S9A and experience unmatched efficiency and performance

Features

  • Maximum Junction Operating Temperature: 150°C
  • Operating Voltage Range: 12V to 15V
  • Pulse Width: 10us to 100ms

Application

  • For electronic devices
  • Used in industrial machines
  • Essential for power systems
  • Ideal for energy-efficient solutions
  • Key component for electrical equipment
  • Versatile application in various industries

Specifications

Parameter Value Parameter Value
Status Last Shipments Compliance PbAHP
Package Type D2PAK-3 / TO-263-2 Case Outline 418AJ
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 800
ON Target N V(BR)CES Typ (V) 600
IC Max (A) 20 VCE(sat) Typ (V) 1.4
Co-Packaged Diode No

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The HGT1S20N60C3S9A chip is a power semiconductor device designed for high-speed switching applications. It features low on-state voltage, low gate charge, and high thermal performance, making it suitable for efficient and reliable power conversion in various electronics applications.
  • Equivalent

    Equivalent products of HGT1S20N60C3S9A chip are HGT1S20N60C3S and HGT1S20N60C3S9. These products are part of the HGT1S20N60C3 series and have similar specifications and features, making them suitable alternatives for the HGT1S20N60C3S9A chip.
  • Features

    1. Gate charge of 20nC 2. Continuous drain current of 60A 3. Low on-state voltage of 3.9V 4. Switching speed of 9A/ns 5. High reliability and robustness 6. Suitable for high-power applications such as motor drives and power supplies.
  • Pinout

    The HGT1S20N60C3S9A is a 20-pin IGBT module primarily used for power switching applications. It features high-speed switching capabilities, low power loss characteristics, and a continuous collector current of 20A. The pins include gate drive, emitter, collector, and various power supply connections.
  • Manufacturer

    The manufacturer of HGT1S20N60C3S9A is Infineon Technologies AG. Infineon Technologies is a German semiconductor manufacturing company that designs, manufactures, and markets a wide range of semiconductor solutions used in various applications such as automotive, industrial, and power electronics.
  • Application Field

    The HGT1S20N60C3S9A is a high-voltage IGBT designed for applications in induction heating, UPS systems, motor drives, and power supplies. Its high voltage and current ratings make it suitable for high-power and high-frequency switching applications, making it ideal for industrial and commercial applications requiring efficient power conversion.
  • Package

    The HGT1S20N60C3S9A chip comes in a TO-263-3 package type, is in a single form, and has a size of 6.7mm x 7.0mm x 3.1mm.

We provide high quality products, thoughtful service and after sale guarantee

  • Product

    We have rich products, can meet your various needs.

  • quantity

    Minimum order quantity starts from 1pcs.

  • shipping

    Lowest international shipping fee starts from $0.00

  • guarantee

    365 days quality guarantee for all products

Ratings and Reviews

Ratings
Please rate the product !
Please enter a comment

Please submit comments after logging into your account.

Submit

Recommend

  • AO4292E

    AO4292E

    Alpha & Omega Semiconductor Inc.

    High-quality 100V 8A SOIC-8 MOSFET with 23mΩ resi...

  • VQ1004P

    VQ1004P

    Vishay

    VQ1004P by Siliconix

  • STS4DPF30L

    STS4DPF30L

    Stmicroelectronics

    Dual P-channel MOSFET Transistor STS4DPF30L featur...

  • STS9D8NH3LL

    STS9D8NH3LL

    STMicroelectronics

    Dual N-channel 30V MOSFET, with 0.012 Ohm resistan...

  • RFP30P05

    RFP30P05

    Onsemi

    MOSFET Power P-Channel TO-220AB

  • NE3210S01-T1B

    NE3210S01-T1B

    Cel

    High-Frequency NE3210S01-T1B Transistor: Incorpora...