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$5000IAUT300N08S5N012ATMA2
AEC-Q101 N-CH 80V HSOF
Brands: Infineon Technologies
Mfr.Part #: IAUT300N08S5N012ATMA2
Datasheet: IAUT300N08S5N012ATMA2 Datasheet (PDF)
Package/Case: 8-PowerSFN
Product Type: Single FETs, MOSFETs
RoHS Status:
Stock Condition: 8,605 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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IAUT300N08S5N012ATMA2 General Description
The IAUT300N08S5N012ATMA2 is a powerhouse in the world of insulated-gate bipolar transistor (IGBT) modules, featuring a robust current rating of 300A and a sturdy voltage rating of 800V. Its primary purpose is to cater to industrial applications that require high power and efficient switching capabilities. The module showcases a sleek and compact design, making it a versatile choice for integration into various systems across different industrial settings
Features
- Peak Current: 4.5A
- Pulse Width Modulation (PWM): Yes
- Thermal Resistance Junction-Air: 60°C/W
Application
- Solar power
- Wind systems
- Grid inverters
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Series | OptiMOS™ | Product Status | Active |
| FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80 V | Current - Continuous Drain (Id) @ 25°C | 300A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | Rds On (Max) @ Id, Vgs | 1.2mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 3.8V @ 275µA | Gate Charge (Qg) (Max) @ Vgs | 231 nC @ 10 V |
| Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 16250 pF @ 40 V |
| Power Dissipation (Max) | 375W (Tc) | Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Supplier Device Package | PG-HSOF-8-1 |
| Package / Case | 8-PowerSFN |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The IAUT300N08S5N012ATMA2 is a power MOSFET chip designed for automotive applications. It provides high-performance switching capabilities and efficient power management in vehicle electronic systems. With a low on-resistance and high current handling capacity, this chip is well-suited for use in automotive power distribution, motor control, and battery management systems.
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Equivalent
Some equivalent products of the IAUT300N08S5N012ATMA2 chip are Infineon IPP300N08N3G, NXP PSMN018-100D, and STMicroelectronics STP260NF10. These chips have similar specifications and can be used as alternatives in various applications where the IAUT300N08S5N012ATMA2 chip is used. -
Features
IAUT300N08S5N012ATMA2 is a 1200V silicon carbide power module with an integrated gate driver. It has a current rating of 300A, an on-state resistance of 8mΩ, and a switching frequency of 50kHz. It also includes under-voltage, over-current, and over-temperature protection features. -
Pinout
The IAUT300N08S5N012ATMA2 is a power MOSFET with a pin count of 5. The function of this MOSFET is to control the flow of power in electronic devices, acting as a switch to regulate voltage and current. -
Manufacturer
The manufacturer of the IAUT300N08S5N012ATMA2 is Infineon Technologies, a German multinational corporation that specializes in semiconductors and system solutions for a wide range of industries including automotive, industrial, and power electronics. They are known for their innovative products and technologies in the semiconductor market. -
Application Field
The IAUT300N08S5N012ATMA2 can be used in various applications such as industrial motor drives, servo drives, power supplies, battery management systems, and renewable energy systems. It is ideal for applications that require high power density, efficiency, and reliability. -
Package
The IAUT300N08S5N012ATMA2 chip is a MOSFET transistor in a TO-220 package. It has a single N-channel, a voltage rating of 80V, a current rating of 25A, and a size of 10.3mm x 12.1mm x 4.5mm.
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