Orders Over
$5000
Infineon IDW20G120C5B
1200V, 20A Silicon Carbide Schottky Diode
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Brands: Infineon Technologies Corporation
Mfr.Part #: IDW20G120C5B
Datasheet: IDW20G120C5B Datasheet (PDF)
Package/Case: TO-247
RoHS Status:
Stock Condition: 2,100 pcs, New Original
Product Type: Single Diodes
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
Qty | Unit Price | Ext Price |
---|---|---|
1 | $17.351 | $17.351 |
10 | $16.617 | $166.170 |
30 | $15.346 | $460.380 |
100 | $14.237 | $1423.700 |
In Stock: 2,100 PCS
IDW20G120C5B General Description
In summary, the IDW20G120C5B CoolSiC™ Schottky diode is a game-changing product that brings together the best of thin wafer technology and merged pn junction design. With its high voltage rating, current capability, and surge current capabilities, this diode is set to become the go-to choice for power electronic systems that demand uncompromising performance and reliability
Specifications
Parameter | Value | Parameter | Value |
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feature-type | Schottky Diode | feature-material | |
feature-configuration | Dual Common Cathode | feature-peak-reverse-repetitive-voltage-v | 1200 |
feature-maximum-continuous-forward-current-a | 62 | feature-peak-non-repetitive-surge-current-a | 190 |
feature-peak-forward-voltage-v | 1.65@20A | feature-peak-reverse-current-ua | 166 |
feature-maximum-junction-ambient-thermal-resistance | feature-maximum-diode-capacitance-pf | ||
feature-maximum-power-dissipation-mw | 250000 | feature-peak-reverse-recovery-time-ns | |
feature-packaging | Tube | feature-rad-hard | |
feature-pin-count | 3 | feature-supplier-package | TO-247 |
feature-standard-package-name1 | TO-247 | feature-cecc-qualified | No |
feature-esd-protection | feature-escc-qualified | ||
feature-military | No | feature-aec-qualified | No |
feature-aec-qualified-number | feature-auto-motive | No | |
feature-p-pap | No | feature-eccn-code | EAR99 |
feature-svhc | No |
Shipping
Shipping Type | Ship Fee | Lead Time | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The IDW20G120C5B is a high power density, energy-efficient IGBT module designed for a wide range of applications, including industrial motor drives, UPS systems, and solar inverters. It features low switching losses, high thermal conductivity, and a compact design, making it ideal for high-performance power electronics systems.
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Equivalent
The equivalent products of the IDW20G120C5B chip are the Infineon Technologies FS75R12KT3 and the STMicroelectronics FGA25N120ANDTU. These chips are also insulated gate bipolar transistors (IGBTs) designed for use in power electronics applications. -
Features
1. 1200V, 20A Insulated Gate Bipolar Transistor (IGBT) module 2. Ideal for high power, high frequency applications 3. One-switch turn-off capability for improved system efficiency 4. Low VCE(sat) and low switching losses 5. Isolation voltage of 3600Vrms 6. RoHS compliant and designed for reliability and long-term performance -
Pinout
The IDW20G120C5B is a 20-pin dual N-channel IGBT module designed for motor control applications. The pins include gate, emitter, collector, and emitter sensing functions to control the switching of the IGBTs. Additionally, there are pins for overcurrent and overtemperature protection. -
Manufacturer
The manufacturer of the IDW20G120C5B is Infineon Technologies AG. Infineon Technologies AG is a German semiconductor manufacturer that produces a wide range of products including power management, automotive, industrial, and security solutions. They are known for their innovative technology and high-quality products in the semiconductor industry. -
Application Field
The IDW20G120C5B is commonly used in applications such as industrial drives, solar inverters, and power supplies. It is also suitable for motor control, welding equipment, and induction heating systems. The IGBT module offers high power density, efficiency, and reliability, making it ideal for various power electronics applications. -
Package
The IDW20G120C5B chip is housed in a module package with a size of 14 x 26 mm and a thickness of 1.6 mm. The package form is dual-in-line pin.
We provide high quality products, thoughtful service and after sale guarantee
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We have rich products, can meet your various needs.
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Minimum order quantity starts from 1pcs.
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Lowest international shipping fee starts from $0.00
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365 days quality guarantee for all products