Orders Over
$5000
IGW50N60H3
50A 600V 333W IGBT Transistors
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Brands: Infineon
Mfr.Part #: IGW50N60H3
Datasheet: IGW50N60H3 Datasheet (PDF)
Package/Case: TO-247
RoHS Status:
Stock Condition: 7,783 pcs, New Original
Product Type: Single IGBTs
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
Qty | Unit Price | Ext Price |
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1 | $6.598 | $6.598 |
In Stock: 7,783 PCS
IGW50N60H3 General Description
The IGW50N60H3 is an advanced single TRENCHSTOP™ IGBT3 designed for high-speed applications with a voltage rating of 600V and a current rating of 50A. Housed in a TO247 package, this IGBT offers an optimal balance between switching and conduction losses, making it ideal for a wide range of power electronic systems. Its unique MOSFET-like turn-off switching behavior is the key feature of this product, resulting in significantly lower turn-off losses compared to traditional IGBTs. This makes it an excellent choice for applications requiring high efficiency and reliability
Features
- Fast switching and high reliability
- High efficiency and low power consumption
- Advanced design for improved performance
- Silicon-based technology for reduced costs
- Wide operating range with stability
- Robust construction for harsh environments
Application
- High efficiency power
- Sustainable energy solutions
- Versatile application usage
- Advanced technology integration
- Reliable performance output
- Cost-effective power solutions
Specifications
Parameter | Value | Parameter | Value |
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IC max | 100.0 A | ICpuls max | 200.0 A |
VCE max | 600.0 V | Switching Frequency max | 100.0 kHz |
Switching Frequency min | 20.0 kHz | Package | TO-247 |
Switching Frequency | HighSpeed3 20-100 kHz | Technology | IGBT HighSpeed 3 |
Ptot max | 333.0 W |
Shipping
Shipping Type | Ship Fee | Lead Time | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The IGW50N60H3 is a silicon-based Insulated Gate Bipolar Transistor (IGBT) chip designed for high power applications. It has a voltage rating of 600V and a current rating of 50A. The chip features low switching losses, high efficiency, and is commonly used in applications such as motor drives, power supplies, and renewable energy systems.
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Equivalent
The equivalent products of IGW50N60H3 chip are IRG7PH42UD and IGBT60H3. They both have similar specifications and can be used as replacements for IGW50N60H3 in various applications. -
Features
Some features of IGW50N60H3 include: rated voltage of 600 V, continuous current rating of 50 A, high-speed switching capability, low on-state voltage drop, low gate charge, and advanced trench gate and field-stop technology for improved performance and efficiency in power electronics applications. -
Pinout
The IGW50N60H3 is a IGBT (Insulated Gate Bipolar Transistor) module with a pin count of 4 pins. The functions of the pins are Gate (G), Collector (C), Emitter (E), and Collector-Emitter Voltage (Vce). -
Manufacturer
Infineon Technologies is the manufacturer of the IGW50N60H3. It is a German semiconductor manufacturer specializing in power management, connectivity, and sensors. Infineon provides innovative solutions for various industries including automotive, industrial, and consumer electronics. -
Application Field
The IGW50N60H3 is often used in industrial applications such as motor control, inverters, welding equipment, and power supplies. It is also commonly utilized in renewable energy systems, such as solar inverters and wind turbines, due to its high power handling capability and fast switching characteristics. -
Package
The IGW50N60H3 chip is in a module package type called IGBT (Insulated Gate Bipolar Transistor) with a TO-247 form. Its size is approximately 15.85mm x 23.85mm x 6.65mm (0.625" x 0.940" x 0.262").
We provide high quality products, thoughtful service and after sale guarantee
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We have rich products, can meet your various needs.
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Minimum order quantity starts from 1pcs.
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Lowest international shipping fee starts from $0.00
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365 days quality guarantee for all products