Orders Over
$5000Infineon IHW20N120R2
Insulate Gate Bipolar Transistors with 1200V Voltage Rating and 20A Current Capacity
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Brands: Infineon
Mfr.Part #: IHW20N120R2
Datasheet: IHW20N120R2 Datasheet (PDF)
Package/Case: TO-247-3
Product Type: Single IGBTs
RoHS Status:
Stock Condition: 9,458 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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IHW20N120R2 General Description
IGBT NPT, Trench Field Stop 1200 V 40 A 330 W Through Hole PG-TO247-3-1
Features
- Powerful monolithic Body Diode with very low forward voltage
- Body diode clamps negative voltages
- Trench and Fieldstop technology for 1200 V applications offers :
- - very tight parameter distribution
- - high ruggedness, temperature stable behavior
- NPT technology offers easy parallel switching capability due to
- positive temperature coefficient in VCE(sat)
- Low EMI
- Qualified according to JEDEC1 for target applications
- Pb-free lead plating; RoHS compliant
- Complete product spectrum and PSpice Models :
Specifications
Parameter | Value | Parameter | Value |
---|---|---|---|
Manufacturer: | Infineon | Product Category: | IGBT Transistors |
RoHS: | Details | Technology: | Si |
Package / Case: | TO-247-3 | Mounting Style: | Through Hole |
Configuration: | Single | Collector- Emitter Voltage VCEO Max: | 1.2 kV |
Collector-Emitter Saturation Voltage: | 1.85 V | Maximum Gate Emitter Voltage: | - 20 V, + 20 V |
Continuous Collector Current at 25 C: | 20 A | Pd - Power Dissipation: | 330 W |
Minimum Operating Temperature: | - 40 C | Maximum Operating Temperature: | + 150 C |
Packaging: | Tube | Brand: | Infineon Technologies |
Continuous Collector Current Ic Max: | 20 A | Height: | 20.95 mm |
Length: | 15.9 mm | Product Type: | IGBT Transistors |
Factory Pack Quantity: | 240 | Subcategory: | IGBTs |
Width: | 5.3 mm | Part # Aliases: | SP000212015 IHW20N120R2XK |
Unit Weight: | 1.340411 oz |
Shipping
Shipping Type | Ship Fee | Lead Time | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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IHW20N120R2 is a high power MOSFET transistor designed for applications requiring high current and voltage levels. It has a current rating of 20A and a voltage rating of 120V, making it suitable for power electronics and industrial applications. It features low on-state resistance and high switching speed, making it ideal for high efficiency and high frequency applications.
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Equivalent
The equivalent products of IHW20N120R2 chip are Infineon's co-packed IHW20N120R3 and IHW20N120R5 power modules. These chips have similar specifications and performance characteristics, making them suitable replacements for the IHW20N120R2. -
Features
The IHW20N120R2 is a 1200V, 40A IGBT with ultrafast soft recovery diode. It features low VCE(sat), high switching frequency, short-circuit ruggedness, and high ruggedness. It is suitable for applications such as solar inverters, UPS, welding machines, and motor control. -
Pinout
IHW20N120R2 is a 20A, 1200V IGBT with a TO-247 package. It has 3 pins: gate, collector, and emitter. The gate pin controls the switching of the IGBT, while the collector and emitter pins carry the current flow. -
Manufacturer
IHW20N120R2 is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in manufacturing power semiconductors, microcontrollers, and sensors for a variety of industries, including automotive, industrial, and renewable energy. -
Application Field
IHW20N120R2 is commonly used in high power switching applications such as motor control, uninterruptible power supplies (UPS), welding equipment, and renewable energy systems. It is also utilized in industrial applications requiring high efficiency and reliability. -
Package
The IHW20N120R2 chip is a high-power IGBT module with a package type of TO-247 and a form of power module. Its size is 34.0mm x 16.5mm x 8.3mm.
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Minimum order quantity starts from 1pcs.
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