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Infineon IRF1607PBF 48HRS

pin TO-B package N-channel Trans MOSFET for V, operati

ISO14001 ISO9001 DUNS

Brands: Infineon

Mfr.Part #: IRF1607PBF

Datasheet: IRF1607PBF Datasheet (PDF)

Package/Case: TO-220-3

RoHS Status:

Stock Condition: 2,144 pcs, New Original

Product Type: Single FETs, MOSFETs

Warranty: 1 Year Ovaga Warranty - Find Out More

Pricing

*All prices are in USD

Qty Unit Price Ext Price
1 $1.253 $1.253
200 $0.486 $97.200
500 $0.468 $234.000
1000 $0.460 $460.000

In Stock: 2,144 PCS

- +

Quick Quote

Please submit RFQ for IRF1607PBF or email to us: Email: [email protected], we will contact you within 12 hours.

IRF1607PBF General Description

Featuring a fast switching speed and high avalanche energy rating, the IRF1607PBF is well-suited for high-frequency switching applications where reliability is crucial. Its RoHS compliance ensures environmental friendliness, meeting the latest standards for hazardous substance restrictions. Widely used in power supplies, motor controls, and other high-power applications, the IRF1607PBF is a versatile and dependable component that enables efficient and effective power management

irf1607pbf

Features

  • This power MOSFET has low on-resistance and high current capabilities
  • The maximum voltage rating is 75V and continuous drain current is 110A
  • It is used in applications like DC-DC converters and motor control

Application

  • Versatile power MOSFET
  • Wide range of applications
  • Reliable power switching

Specifications

Parameter Value Parameter Value
Product Category MOSFET RoHS Details
Technology Si Mounting Style Through Hole
Package / Case TO-220-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 75 V
Id - Continuous Drain Current 142 A Rds On - Drain-Source Resistance 7.5 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 4 V
Qg - Gate Charge 210 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 380 W
Channel Mode Enhancement Brand Infineon Technologies
Configuration Single Height 15.65 mm
Length 10 mm Product Type MOSFET
Factory Pack Quantity 1000 Subcategory MOSFETs
Transistor Type 1 N-Channel Width 4.4 mm
Part # Aliases SP001553894

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The IRF1607PBF is a power MOSFET chip designed for switching applications. It has a low on-resistance and can handle high currents. The chip is commonly used in power supplies, motor controls, and other high-power applications. It offers good thermal performance and reliability due to the use of advanced manufacturing processes.
  • Equivalent

    Some equivalent products of the IRF1607PBF chip include IRF1607L, IRF1607K, and IRF1607G.
  • Features

    The IRF1607PBF is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with features including a drain-to-source voltage rating of 75V, a continuous drain current of 98A, a low on-resistance of 0.0086 ohms, and a fast switching speed. It is commonly used in high-power applications such as motor control, power supplies, and DC-DC converters.
  • Pinout

    The IRF1607PBF is a power MOSFET with a TO-220AB package. It has three pins: Gate (G), Drain (D), and Source (S). The Gate pin controls the flow of current between the Drain and Source pins.
  • Manufacturer

    The manufacturer of the IRF1607PBF is Infineon Technologies. It is a German semiconductor manufacturer that specializes in designing and producing a wide range of electronic components and systems for various industries, including automotive, industrial, and consumer electronics.
  • Application Field

    The IRF1607PBF is a power MOSFET transistor commonly used in applications requiring high power and switching capabilities such as motor drives, power supplies, and inverters. It can handle very high currents and has a high voltage rating, making it suitable for a wide range of power electronics applications.
  • Package

    The IRF1607PBF chip comes in a TO-220AB package type. It has a through-hole form and a size of 10.16mm x 5.08mm x 29.21mm.

Datasheet PDF

Preliminary Specification IRF1607PBF PDF Download

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