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Infineon IRFB7534PBF
Product Description: IRFB7534PBF, featuring a voltage rating of 60V, a maximum current of 195A, and a low on-resistance of 2.4mΩ at 10V
Brands: Infineon
Mfr.Part #: IRFB7534PBF
Datasheet: IRFB7534PBF Datasheet (PDF)
Package/Case: TO-220-3
RoHS Status:
Stock Condition: 9,458 pcs, New Original
Product Type: Single FETs, MOSFETs
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $1.402 | $1.402 |
| 10 | $1.224 | $12.240 |
| 50 | $0.878 | $43.900 |
| 100 | $0.768 | $76.800 |
| 500 | $0.719 | $359.500 |
| 1000 | $0.695 | $695.000 |
In Stock: 9,458 PCS
IRFB7534PBF General Description
With a maximum continuous drain current of 195A and a drain-source voltage of 60V, the IRFB7534PBF N-channel MOSFET is designed to handle high power applications with ease. The on-resistance of 0.002ohm at a test voltage of 10V ensures minimal power loss and high efficiency, making it ideal for use in power management and switching applications. Additionally, the threshold voltage of 3.7V provides precise control over the MOSFET's switching behavior, allowing for reliable and consistent performance
Features
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- Compliant to RoHS Directive 2002/95/EC
Application
SWITCHINGSpecifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Manufacturer: | Infineon | Product Category: | MOSFET |
| RoHS: | Details | Technology: | Si |
| Mounting Style: | Through Hole | Package / Case: | TO-220-3 |
| Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 60 V | Id - Continuous Drain Current: | 195 A |
| Rds On - Drain-Source Resistance: | 2 mOhms | Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3.7 V | Qg - Gate Charge: | 186 nC |
| Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 175 C |
| Pd - Power Dissipation: | 294 W | Channel Mode: | Enhancement |
| Tradename: | StrongIRFET | Packaging: | Tube |
| Brand: | Infineon Technologies | Configuration: | Single |
| Fall Time: | 93 ns | Forward Transconductance - Min: | 498 S |
| Height: | 15.65 mm | Length: | 10 mm |
| Product Type: | MOSFET | Rise Time: | 134 ns |
| Factory Pack Quantity: | 1000 | Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel | Typical Turn-Off Delay Time: | 118 ns |
| Typical Turn-On Delay Time: | 20 ns | Width: | 4.4 mm |
| Unit Weight: | 0.068784 oz |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The IRFB7534PBF is a power MOSFET transistor designed for high power applications, with a maximum drain current of 180A and a voltage rating of 40V. This chip is commonly used in switch mode power supplies, motor control, and automotive applications due to its efficiency and reliability.
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Equivalent
"Equivalent products of IRFB7534PBF chip are IRFB7530PbF, IRFB7337PbF, and IRFB7533PbF from Infineon Technologies. These products have similar specifications, including the same package type (TO-220), voltage rating, current rating, and on-resistance." -
Features
The IRFB7534PBF is a N-channel power MOSFET with a drain-source voltage of 60V and a continuous drain current of 50A. It has a low on-resistance of 12.5mΩ, making it suitable for high efficiency power management applications. This MOSFET is RoHS compliant and designed for high reliability and performance. -
Pinout
The IRFB7534PBF is a power MOSFET with a pin count of 3. Pin 1 is the gate, Pin 2 is the drain, and Pin 3 is the source. The function of this MOSFET is to control the flow of power in electronic circuits by switching it on and off. -
Manufacturer
The manufacturer of the IRFB7534PBF is Infineon Technologies. Infineon is a German semiconductor manufacturing company that specializes in producing power semiconductors, microcontrollers, and sensors for automotive, industrial, and consumer electronics applications. They are known for their innovations in power management and energy efficiency solutions. -
Application Field
The IRFB7534PBF is commonly used in power management applications such as motor control, power supplies, and DC-DC converters. It is also used in battery charging systems, solar inverters, and LED lighting. Its high efficiency and low on-resistance make it suitable for various high power, high frequency switching applications. -
Package
The IRFB7534PBF chip is packaged in a TO-220AB form with a size of 10.54 mm x 29.21 mm x 4.57 mm.
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