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Orders Over
$5000
Infineon IRG4BC30WPBF
23A High Current Capability IGBTs
Brands: Infineon
Mfr.Part #: IRG4BC30WPBF
Datasheet: IRG4BC30WPBF Datasheet (PDF)
Package/Case: TO-220-3
RoHS Status:
Stock Condition: 9,458 pcs, New Original
Product Type: Single IGBTs
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $5.245 | $5.245 |
| 10 | $4.580 | $45.800 |
| 50 | $4.186 | $209.300 |
| 100 | $3.787 | $378.700 |
| 500 | $3.603 | $1801.500 |
| 1000 | $3.520 | $3520.000 |
In Stock: 9,458 PCS
IRG4BC30WPBF General Description
With features such as overcurrent protection and temperature monitoring, the IRG4BC30WPBF provides added safety and reliability in critical applications. Its compact size and versatile mounting options make it a versatile choice for modern electronic systems
Features
- Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications
- Industry-benchmark switching losses improve efficiency of all power supply topologies
- 50% reduction of Eoff parameter
- Low IGBT conduction losses
- Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | IGBT Transistors | RoHS | Details |
| Technology | Si | Package / Case | TO-220-3 |
| Mounting Style | Through Hole | Configuration | Single |
| Collector- Emitter Voltage VCEO Max | 600 V | Collector-Emitter Saturation Voltage | 2.7 V |
| Maximum Gate Emitter Voltage | - 20 V, + 20 V | Continuous Collector Current at 25 C | 23 A |
| Pd - Power Dissipation | 100 W | Minimum Operating Temperature | - 55 C |
| Brand | Infineon Technologies | Height | 8.77 mm |
| Length | 10.54 mm | Product Type | IGBT Transistors |
| Factory Pack Quantity | 1000 | Subcategory | IGBTs |
| Width | 4.69 mm |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The IRG4BC30WPBF is a high-performance insulated gate bipolar transistor (IGBT) chip optimized for power switching applications. It features low saturation voltage and high speed performance, making it ideal for use in inverters, motor drives, and other high-power applications. With a compact and efficient design, the IRG4BC30WPBF offers superior reliability and performance in demanding industrial environments.
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Equivalent
The equivalent products of IRG4BC30WPBF chip are IRG4BC30KD, FGH60N60SMD, and IRG4BC30KDPBF. These are all Insulated Gate Bipolar Transistors (IGBTs) commonly used in various industrial and consumer electronic applications. -
Features
The IRG4BC30WPBF is an insulated gate bipolar transistor (IGBT) with a high current rating of 45A, a low voltage drop of 1.8V, and a high-speed switching capability. It also features a Trench IGBT structure, low saturation voltage, and high ruggedness for reliable performance in power electronics applications. -
Pinout
IRG4BC30WPBF is a N-Channel IGBT (Insulated Gate Bipolar Transistor) with a TO-220 package. It has 3 pins: Gate (G), Collector (C), and Emitter (E). It is used for high-speed switching applications and power supply inverters. -
Manufacturer
IRG4BC30WPBF is manufactured by Infineon Technologies, a German semiconductor company specializing in power and sensor systems. Infineon provides a wide range of products for various industries, including automotive, industrial, and consumer electronics. They are known for their high-performance and efficient semiconductor solutions. -
Application Field
IRG4BC30WPBF is mainly used in motor controls, industrial inverters, and solar inverters due to its high-speed switching capabilities, low conduction and switching losses, and high efficiency. It is also used in power supplies, UPS systems, and welding equipment for its high performance and reliability. -
Package
The IRG4BC30WPBF is a TO-220 package type insulated gate bipolar transistor (IGBT) chip. It has a form of through-hole and a size of 10.3mm x 4.5mm x 9.1mm.
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