Orders Over
$5000
IXFN180N25T
Trans MOSFET N-CH 250V 168A 4-Pin SOT-227B
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Brands: IXYS
Mfr.Part #: IXFN180N25T
Datasheet: IXFN180N25T Datasheet (PDF)
Package/Case: SOT-227-4
RoHS Status:
Stock Condition: 9,458 pcs, New Original
Product Type: Single FETs, MOSFETs
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
Qty | Unit Price | Ext Price |
---|---|---|
1 | $19.811 | $19.811 |
200 | $7.667 | $1533.400 |
500 | $7.398 | $3699.000 |
1000 | $7.265 | $7265.000 |
In Stock: 9,458 PCS
IXFN180N25T General Description
With the IXFN180N25T, you get more than just a standard power MOSFET – you get a cutting-edge solution for your low voltage and high current needs. Its ultra-low RDS(on) not only saves power but also delivers superior performance in tough conditions. From automotive applications to other demanding environments, this MOSFET is designed to excel and provide long-lasting reliability
Features
- High Current Handling Capability Available
- Space-Saving Package Design
- Fast Response Time
Application
- Efficient power supply
- Reliable DC converter
- Advanced battery charger
Specifications
Parameter | Value | Parameter | Value |
---|---|---|---|
Manufacturer: | IXYS | Product Category: | Discrete Semiconductor Modules |
RoHS: | Details | Product: | Power MOSFET Modules |
Type: | GigaMOS Power MOSFET | Technology: | Si |
Vgs - Gate-Source Voltage: | - 20 V, + 20 V | Mounting Style: | Screw Mounts |
Package / Case: | SOT-227-4 | Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C | Series: | IXFN180N25 |
Packaging: | Tube | Brand: | IXYS |
Configuration: | Single | Fall Time: | 20 ns |
Height: | 12.22 mm | Id - Continuous Drain Current: | 168 A |
Length: | 38.23 mm | Number of Channels: | 1 Channel |
Pd - Power Dissipation: | 900 W | Product Type: | Discrete Semiconductor Modules |
Rds On - Drain-Source Resistance: | 12.9 mOhms | Rise Time: | 52 ns |
Factory Pack Quantity: | 10 | Subcategory: | Discrete Semiconductor Modules |
Tradename: | HiPerFET | Transistor Polarity: | N-Channel |
Typical Turn-Off Delay Time: | 88 ns | Typical Turn-On Delay Time: | 35 ns |
Vds - Drain-Source Breakdown Voltage: | 250 V | Vgs th - Gate-Source Threshold Voltage: | 3 V |
Width: | 25.42 mm |
Shipping
Shipping Type | Ship Fee | Lead Time | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The IXFN180N25T is a high-performance power MOSFET chip designed for use in high-power applications. It features a low on-state resistance and high current handling capabilities, making it ideal for power conversion and motor control applications. The chip is known for its reliability and efficiency in managing high-power systems.
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Equivalent
Equivalent products of IXFN180N25T chip include STW75N20 FET, IRFP4768 MOSFET, and AUIRFN8459 FET. -
Features
The IXFN180N25T is a Power MOSFET designed for high power applications with a voltage rating of 250V and a current rating of 180A. It features low on-state resistance for efficient power handling, low gate charge for fast switching, and a rugged construction for reliable performance in demanding environments. -
Pinout
The IXFN180N25T is a TO-268 package type Power MOSFET with a pin count of 3. The pins are Gate, Drain, and Source. This device is used for power switching applications in a variety of industrial and automotive applications. -
Manufacturer
IXYS Corporation is the manufacturer of the IXFN180N25T. IXYS Corporation is a global semiconductor company specializing in power and analog semiconductors. They design and produce a wide variety of products for a range of applications such as power conversion, motor control, and renewable energy. -
Application Field
IXFN180N25T is a high voltage MOSFET designed for use in power supply, DC-DC converters, motor control, and other high voltage applications. It is suitable for applications that require high efficiency, low conduction losses, and high frequency operation. -
Package
The IXFN180N25T chip is in a TO-247 package, with a through-hole form. It has a size of 31.5mm x 15.9mm.
We provide high quality products, thoughtful service and after sale guarantee
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We have rich products, can meet your various needs.
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Minimum order quantity starts from 1pcs.
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Lowest international shipping fee starts from $0.00
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365 days quality guarantee for all products