IXFN24N100

Part points

• IXFN24N100 is a high power MOSFET chip with a voltage rating of 1000V and a current rating of 24A. It is designed for use in high power applications such as motor drives, power supplies, and inverters. The chip features low on-resistance and high efficiency, making it suitable for demanding power electronics applications.

• Equivalent

  The equivalent products of the IXFN24N100 chip are the IXYS IXFN25N120P3 and the Infineon IPP60R190CP. These are both power MOSFETs with similar specifications and performance capabilities.

• Features

  - IXFN24N100 is a 1000V and 24A silicon carbide MOSFET - Low on-resistance and fast switching - High temperature operation up to 175°C - High reliability and efficiency in power electronic applications - Low gate charge and gate voltage - Ideal for use in high power applications such as motor drives, inverters, and power supplies

• Pinout

  The IXFN24N100 is a MOSFET transistor with a pin count of 3. The pin functions are gate (G), drain (D), and source (S). The transistor is typically used for high voltage, high-speed switching applications in power electronics.

• Manufacturer

  IXFN24N100 is manufactured by IXYS Corporation, which is a global semiconductor company specializing in power semiconductors, integrated circuits, and RF systems. IXYS Corporation serves industries such as transportation, industrial, medical, and energy by providing high-performance and reliable semiconductor solutions.

• Application Field

  IXFN24N100 is a power MOSFET transistor that can be used in applications such as power supplies, motor control, inverters, and other high voltage switching applications. It is designed to handle high current and high voltage levels, making it suitable for a wide range of power electronics applications.

• Package

  The IXFN24N100 chip is a TO-3P package type, with a form of TO-247, and a size of 10.5mm x 24mm.