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$5000
IXFN26N90
ROHS SOT-227B MOSFETs IXFN26N90
Brands: Littelfuse
Mfr.Part #: IXFN26N90
Datasheet: IXFN26N90 Datasheet (PDF)
Package/Case: SOT-227-4
RoHS Status:
Stock Condition: 9,466 pcs, New Original
Product Type: Single FETs, MOSFETs
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $73.860 | $73.860 |
| 200 | $29.472 | $5894.400 |
| 500 | $28.486 | $14243.000 |
| 1000 | $28.000 | $28000.000 |
In Stock: 9,466 PCS
IXFN26N90 General Description
The N-Channel HiPerFET™ Standard series, featuring the renowned Power MOSFETs, is a top choice for various applications requiring efficient power handling. With its low gate charge and robust design, this series excels in both hard switching and resonant mode operations. Its fast intrinsic diode further enhances performance, making it a reliable option for industrial use. Available in a range of standard packages, including isolated types, the HiPerFET™ Standard series offers flexibility and convenience for diverse projects
Features
- Miniaturized Package
- High Efficiency Operation
- Auxiliary Diode Included
Application
- User-friendly operation
- Intelligent power control
- Safe and reliable
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Drain-Source Voltage (V) | 900 | Maximum On-Resistance @ 25 ℃ (Ohm) | 0.3 |
| Continuous Drain Current @ 25 ℃ (A) | 26 | Gate Charge (nC) | 240 |
| Input Capacitance, CISS (pF) | 8700 | Thermal resistance [junction-case] (K/W) | 0.21 |
| Configuration | Single | Package Type | SOT-227 |
| Power Dissipation (W) | 600 | Maximum Reverse Recovery (ns) | 250 |
| Sample Request | No |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The IXFN26N90 is a power MOSFET (metal-oxide-semiconductor field-effect transistor) chip designed for high voltage and high current applications. It has a voltage rating of 900V and can handle a continuous current of 26A. With low on-resistance and fast switching capabilities, the IXFN26N90 is widely used in power supplies, motor controls, and other high-power applications.
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Equivalent
Some equivalent products of the IXFN26N90 chip are FJAF6810, FS70SMJ-03, and IRG7PH42U. These are all power MOSFET transistors with similar specifications and characteristics to the IXFN26N90 chip. -
Features
IXFN26N90 is a high power MOSFET with a voltage rating of 900V and a maximum current rating of 26A. It has low on-resistance, high switching speed, and high pulse current capability, making it suitable for use in power supplies, inverters, and motor control applications. -
Pinout
IXFN26N90 is a power MOSFET with a TO-247 package, which has 3 pins. The pin configuration is source, gate, and drain. The MOSFET is designed for high power applications in industrial and automotive sectors, providing efficient switching and low on-resistance. -
Manufacturer
IXFN26N90 is manufactured by IXYS Corporation, which is a global semiconductor company specializing in the design and production of power semiconductors, integrated circuits, and RF systems. They provide products to various industries such as transportation, communication, industrial, and consumer electronics. -
Application Field
IXFN26N90 is a high performance MOSFET commonly used in power supply, motor control, and renewable energy applications. It is suitable for high frequency switching applications in industrial and automotive systems, as well as power management in telecommunications and consumer electronics. -
Package
The IXFN26N90 chip is a power MOSFET transistor with a TO-268 package type, radial form, and size dimensions of 10.67mm x 9.1mm x 4.7mm. It is designed for high power applications and offers low on-resistance and high current-handling capabilities.
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Minimum order quantity starts from 1pcs.
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