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Orders Over
$5000IXFN64N60P
Trans MOSFET N-CH 600V 50A 4-Pin SOT-227B
Brands: IXYS
Mfr.Part #: IXFN64N60P
Datasheet: IXFN64N60P Datasheet (PDF)
Package/Case: SOT-227B
Product Type: Single FETs, MOSFETs
RoHS Status:
Stock Condition: 8,667 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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IXFN64N60P General Description
Designed with precision and innovation in mind, the Polar™ HiPerFETs deliver exceptional performance characteristics that set them apart from traditional power MOSFETs. With a focus on efficiency and speed, this product family offers a reliable solution for demanding applications in the fields of motor control and power supply management
Features
- High Reliability Rate
- Low Crosstalk Risk
- Fault-Tolerant Design
Application
- Inverters for Solar Panels
- LED Driver Circuits
- Induction Heating Systems
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Manufacturer | IXYS | Product Category | Discrete Semiconductor Modules |
| RoHS | Details | Product | Power MOSFET Modules |
| Type | HiperFET | Technology | Si |
| Vgs - Gate-Source Voltage | - 30 V, + 30 V | Mounting Style | Screw Mount |
| Package / Case | SOT-227-4 | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Series | IXFN64N60 |
| Brand | IXYS | Configuration | Single |
| Fall Time | 24 ns | Height | 9.6 mm |
| Id - Continuous Drain Current | 50 A | Length | 38.2 mm |
| Number of Channels | 1 Channel | Pd - Power Dissipation | 700 W |
| Product Type | Discrete Semiconductor Modules | Rds On - Drain-Source Resistance | 96 mOhms |
| Rise Time | 23 ns | Factory Pack Quantity | 10 |
| Subcategory | Discrete Semiconductor Modules | Tradename | HiPerFET |
| Transistor Polarity | N-Channel | Typical Turn-Off Delay Time | 79 ns |
| Typical Turn-On Delay Time | 28 ns | Vds - Drain-Source Breakdown Voltage | 600 V |
| Width | 25.07 mm |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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![Anti-static bag]( "Anti-static bag")
Step3 :Anti-static bag
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![Individual packaging]( "Individual packaging")
Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The IXFN64N60P is a high voltage, high power MOSFET chip designed for use in various applications such as power supplies, motor control, and inverters. It has a maximum voltage rating of 600V and a current rating of 64A. This chip offers low on-state resistance and fast switching speeds, making it ideal for high power applications that require efficient performance.
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Equivalent
Some equivalent products to the IXFN64N60P chip are Infineon's IPP60R360C6, STMicroelectronics' STGWT40V60DF, and Fairchild Semiconductor's FGH60N60SMD. These MOSFETs have similar specifications and performance characteristics to the IXFN64N60P. -
Features
The IXFN64N60P is a 600V high-speed switching IGBT that offers low Vce(sat) and high switching speed. It has a rugged and reliable design for demanding applications. This IGBT also features a high current capability and low gate charge, making it ideal for power factor correction, UPS, and motor drive applications. -
Pinout
The IXFN64N60P is a 3-pin IGBT transistor with a TO-268 package. It is a N-channel SiC power MOSFET with a maximum current rating of 64A and a breakdown voltage of 600V. Its function is to switch high-power loads in industrial applications. -
Manufacturer
IXFN64N60P is manufactured by IXYS Corporation. IXYS Corporation is a global power semiconductor and integrated circuit manufacturer. They specialize in the development, manufacturing, and marketing of advanced power semiconductor devices, integrated circuits, and modules. Their products are used in a wide range of industries including automotive, industrial, telecommunications, and consumer electronics. -
Application Field
IXFN64N60P is a high-voltage, high-current IGBT designed for use in power supply, motor control, and welding applications. It is commonly used in industrial automation, renewable energy systems, and electric vehicle charging stations. Its high power handling capability and low switching losses make it ideal for high power applications that require efficient and reliable operation. -
Package
The IXFN64N60P chip is a power semiconductor made in a TO-268 package. It has a module form and size of 14 mm x 28 mm x 6 mm.
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