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$5000IXGH50N60B
The IXGH50N60B is designed for high-power applications requiring efficient switching at high voltages
Brands: Ixys
Mfr.Part #: IXGH50N60B
Datasheet: IXGH50N60B Datasheet (PDF)
Package/Case: TO-247AD-3
Product Type: Single IGBTs
RoHS Status:
Stock Condition: 8,889 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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IXGH50N60B General Description
Engineered for industrial use, the IXGH50N60B IGBT boasts a voltage rating of 600V and a current rating of 75A, making it well-suited for high power switching applications. Its low VCE(sat) voltage of 2.3V at 50A leads to reduced power losses and improved efficiency, enhancing its appeal for demanding industrial scenarios. Housed in a TO-247 package, this IGBT delivers excellent thermal performance and high power dissipation capabilities, enabling reliable operation even at elevated temperatures. With a high short circuit withstand time of 10µs, the IXGH50N60B is perfectly suited for applications where short circuit protection is paramount. Its positive temperature coefficient simplifies the paralleling of multiple devices, while its wide safe operating area increases reliability and ruggedness. Widely used in motor control, power supplies, and high power inverters, the IXGH50N60B demonstrates its versatility and dependability in industrial settings
Features
- High efficiency and reliability
- Faster switching and lower losses
- Improved thermal performance guaranteed
- Low power consumption for energy savings
- Safe operation within specified ratings
- Precise control of voltage and current
Application
- Advanced motor drives
- High-speed RF generators
- Compact electric chargers
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | IGBT Transistors | RoHS | Details |
| Technology | Si | Package / Case | TO-247AD-3 |
| Mounting Style | Through Hole | Configuration | Single |
| Collector- Emitter Voltage VCEO Max | 600 V | Maximum Gate Emitter Voltage | - 20 V, + 20 V |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Series | IXGH50N60 | Brand | IXYS |
| Continuous Collector Current Ic Max | 75 A | Height | 21.46 mm |
| Length | 16.26 mm | Product Type | IGBT Transistors |
| Factory Pack Quantity | 30 | Subcategory | IGBTs |
| Width | 5.3 mm |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The IXGH50N60B is a high power IGBT (Insulated Gate Bipolar Transistor) chip that is designed for use in high voltage and high current applications. It offers low conduction and switching losses, making it ideal for applications such as motor control, power supplies, and inverters. Its impressive performance and reliability make it a popular choice among engineers in the power electronics industry.
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Equivalent
Equivalent products of IXGH50N60B chip are as follows: 1. IGBTs from other manufacturers such as Infineon, STMicroelectronics, and Toshiba that have similar specifications and performance characteristics. 2. Alternative IXYS IGBTs like IXGH25N120B, IXGH60N60B, and IXGH40N60B that may suit your application requirements. 3. Silicon carbide (SiC) MOSFETs or GaN transistors as potential replacements with improved efficiency and switching speeds. -
Features
IXGH50N60B is a high voltage IGBT transistor featuring a collector current of 75A, a collector-emitter voltage of 600V, and a maximum power dissipation of 330W. It offers low saturation voltage and high-speed switching performance, making it suitable for use in high power and high-frequency applications. -
Pinout
The IXGH50N60B is a high power IGBT with a TO-247 package. It has 3 pins: gate (G), collector (C), and emitter (E). The gate pin is used to control the switching of the IGBT, while the collector and emitter pins are used to carry the main current flow. -
Manufacturer
The manufacturer of the IXGH50N60B is IXYS Corporation. IXYS Corporation is a global semiconductor company that designs and produces power metal-oxide-semiconductor field-effect transistors (MOSFETs), rectifiers, thyristors, and other power semiconductor devices for a wide range of applications in the power conversion and control market. -
Application Field
The IXGH50N60B is commonly used in power switching applications such as motor drives, UPS systems, induction heating, and industrial control systems. It is also used in high voltage DC-DC converters, inverters, and automotive systems requiring higher power density and efficiency. -
Package
The IXGH50N60B chip comes in a TO-247 package, which is a through-hole form. The size of the chip is approximately 15.65mm x 19.5mm x 5.74mm.
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