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$5000IXGQ90N33TCD1
This product is a Trans IGBT Chip designed for high-power applications with a 330V voltage threshold
Brands: Ixys
Mfr.Part #: IXGQ90N33TCD1
Datasheet: IXGQ90N33TCD1 Datasheet (PDF)
Package/Case: TO-3P
Product Type: Single IGBTs
RoHS Status:
Stock Condition: 8,610 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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IXGQ90N33TCD1 General Description
IGBT Trench 330 V 90 A 200 W Through Hole TO-3P
Features
- High-performance applications with low-power consumption
- Efficient power conversion for improved efficiency
Application
- UPS systems
- Industrial machinery
- Battery chargers
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | IGBT Transistors | RoHS | Details |
| Technology | Si | Package / Case | TO-3P |
| Mounting Style | Through Hole | Configuration | Single |
| Collector- Emitter Voltage VCEO Max | 330 V | Collector-Emitter Saturation Voltage | 1.8 V |
| Maximum Gate Emitter Voltage | - 20 V, + 20 V | Continuous Collector Current at 25 C | 90 A |
| Pd - Power Dissipation | 200 W | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Brand | IXYS |
| Gate-Emitter Leakage Current | 200 nA | Product Type | IGBT Transistors |
| Factory Pack Quantity | 30 | Subcategory | IGBTs |
| Unit Weight | 0.194007 oz |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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![Product]( "Product")
Step1 :Product
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Step2 :Vacuum packaging
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![Anti-static bag]( "Anti-static bag")
Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The IXGQ90N33TCD1 chip is a high-power GaN transistor designed for radio frequency and power amplifier applications. It offers high efficiency, high power density, and high voltage capabilities, making it ideal for use in demanding RF and power amplifier systems.
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Equivalent
The equivalent products of IXGQ90N33TCD1 chip are Infineon's CoolMOS N-Channel Power MOSFETs such as IPA60R190C6, IPB60R190C6, and IPD60R190C6. These products offer similar functionalities and characteristics, making them suitable replacements for the IXGQ90N33TCD1 chip. -
Features
1. GaN-on-SiC technology for high power and efficiency 2. 90W minimum power 3. 330-360 MHz frequency 4. Lightweight and compact design 5. High temperature operation up to 110°C 6. Integrated matching network for easy integration into RF systems -
Pinout
The IXGQ90N33TCD1 is a power MOSFET with a pin count of 3. The functions of the pins are gate, drain, and source, used for controlling the flow of current in the circuit. -
Manufacturer
IXGQ90N33TCD1 is manufactured by Infineon Technologies, a German semiconductor manufacturing company. Infineon specializes in the production of power semiconductors, automotive semiconductors, and sensors. -
Application Field
The IXGQ90N33TCD1 is a high-power RF transistor commonly used in applications such as aerospace, defense, industrial, and medical equipment. It is suitable for high-frequency amplification, radar systems, and satellite communication. Its advanced technology and high performance make it ideal for demanding RF power applications in various industries. -
Package
The IXGQ90N33TCD1 chip is packaged in a TO-220 form, with a size of 10.1mm x 18mm x 3.5mm.
We provide high quality products, thoughtful service and after sale guarantee
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We have rich products, can meet your various needs.
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Minimum order quantity starts from 1pcs.
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365 days quality guarantee for all products
