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Orders Over
$5000IXSH24N60AU1
IGBT and Diode Combination Pack
Brands: Ixys
Mfr.Part #: IXSH24N60AU1
Datasheet: IXSH24N60AU1 Datasheet (PDF)
Package/Case: TO-247AD-3
Product Type: Single IGBTs
RoHS Status:
Stock Condition: 7,485 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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IXSH24N60AU1 General Description
When it comes to power electronics, the IXSH24N60AU1 is a standout choice for high-speed MOSFET power transistors. Boasting a high current rating of 24A and a voltage rating of 600V, this transistor is optimized for demanding power conversion applications such as switch mode power supplies and motor controls. Its advanced silicon technology delivers efficiency and reliability, while the low on-resistance of 0.24 ohms minimizes heat dissipation for energy-efficient performance. The fast switching speed of the IXSH24N60AU1 enables high-frequency operation, reducing switching losses and enhancing overall efficiency. Housed in a TO-247 package, this transistor offers superior thermal performance and power dissipation capabilities for reliable operation in challenging environments. With features like overcurrent protection and overtemperature shutdown, the IXSH24N60AU1 ensures safe and secure operation across various power electronics applications
Features
- Fast switching speed
- High current handling capability
Application
- Emerging Technologies
- Green Energy Initiatives
- Reliable Power Conversion
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | IGBT Transistors | RoHS | Details |
| Technology | Si | Package / Case | TO-247AD-3 |
| Mounting Style | Through Hole | Configuration | Single |
| Collector- Emitter Voltage VCEO Max | 600 V | Maximum Gate Emitter Voltage | - 20 V, + 20 V |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Series | IXSH24N60 | Brand | IXYS |
| Continuous Collector Current Ic Max | 48 A | Height | 21.46 mm |
| Length | 16.26 mm | Product Type | IGBT Transistors |
| Factory Pack Quantity | 30 | Subcategory | IGBTs |
| Width | 5.3 mm |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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![Anti-static bag]( "Anti-static bag")
Step3 :Anti-static bag
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Step4 :Individual packaging
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The IXSH24N60AU1 is a high voltage and high-speed power MOSFET that is commonly used in power electronics applications. With a voltage rating of 600V and a current rating of 24A, this chip is suitable for a wide range of switching and amplification tasks. Its advanced design allows for efficient power handling and improved performance in various applications.
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Equivalent
The equivalent products of IXSH24N60AU1 chip are IXSH24N60UF1, IXSH24N60BU1, IXSH24N60BU1, and IXSH24N60UF1. These chips are all high voltage power transistors with similar specifications and performance characteristics, making them suitable replacements for each other in various electronic applications. -
Features
1. Low on-resistance of 0.18 ohms 2. High voltage of 600V 3. Avalanche energy rated at 662mJ 4. Fast switching speed 5. High reliability and ruggedness 6. Designed for high power applications 7. TO-247 package for easy mounting 8. RoHS compliant and lead-free -
Pinout
The IXSH24N60AU1 has 3 pins (Gate, Drain, Source) and functions as a high-speed, rugged, and efficient IGBT (Insulated Gate Bipolar Transistor) with a 600V rating and a continuous collector current of 24A. It is designed for power electronics applications requiring high efficiency and reliability. -
Manufacturer
IXYS Corporation is the manufacturer of the IXSH24N60AU1. It is a global semiconductor company that designs, manufactures, and markets power semiconductors, radio-frequency (RF) power semiconductors, and digital and analog integrated circuits. They serve a wide range of markets including automotive, industrial, consumer, and communication sectors. -
Application Field
The IXSH24N60AU1 can be used in a variety of applications such as power supplies, motor control, renewable energy systems, and industrial equipment. This MOSFET module is designed for high-speed switching and efficient power control in these applications, making it ideal for use in a wide range of industries. -
Package
The IXSH24N60AU1 chip is available in a TO-247 package type with a single form and size of 10.54mm x 15.87mm.
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