Orders Over
$5000IXTH110N10L2
IXTH110N10L2: MOSFET engineered for linear power delivery
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Brands: LITTELFUSE INC
Mfr.Part #: IXTH110N10L2
Datasheet: IXTH110N10L2 Datasheet (PDF)
Package/Case: TO-247-3
Product Type: Single FETs, MOSFETs
RoHS Status:
Stock Condition: 6,507 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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IXTH110N10L2 General Description
For applications requiring Power MOSFETs to function in their current saturation regions, the IXTH110N10L2 offers unmatched performance and durability. By incorporating low thermal resistances and high power density, these devices can handle the rigorous thermal and electrical stresses that come with linear-mode operation. With an extended Forward Bias Safe Operating Areas (FBSOA), these MOSFETs mitigate the risk of device failures caused by extreme stresses, ensuring reliability even under high drain voltages and currents
Features
- Compact design footprint
- Efficient power consumption
- Simplified system integration
- Improved overall performance
Application
- Current sensors
- Voltage references
- Amplifier modules
Specifications
Parameter | Value | Parameter | Value |
---|---|---|---|
Rohs Code | Yes | Part Life Cycle Code | Active |
Ihs Manufacturer | LITTELFUSE INC | Package Description | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Samacsys Manufacturer | LITTELFUSE | Additional Feature | AVALANCHE RATED |
Avalanche Energy Rating (Eas) | 3000 mJ | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 100 V |
Drain Current-Max (ID) | 110 A | Drain-source On Resistance-Max | 0.018 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-247AD |
JESD-30 Code | R-PSFM-T3 | JESD-609 Code | e3 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Operating Temperature-Min | -55 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 600 W | Pulsed Drain Current-Max (IDM) | 300 A |
Surface Mount | NO | Terminal Finish | MATTE TIN |
Terminal Form | THROUGH-HOLE | Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | 10 | Transistor Application | AMPLIFIER |
Transistor Element Material | SILICON |
Shipping
Shipping Type | Ship Fee | Lead Time | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The IXTH110N10L2 is a power MOSFET chip designed for high voltage applications. It has a maximum drain-source voltage of 1000V and a low on-resistance, making it suitable for power switching in various electronic devices. The chip is built with advanced technology to ensure efficient and reliable performance, making it an ideal choice for power conversion and control circuits.
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Equivalent
The equivalent products of the IXTH110N10L2 chip include IXTH100N10L2, IXTH120N10L2, IXTH140N10L2, and IXTH160N10L2. -
Features
The key features of the IXTH110N10L2 are: - Power MOSFET transistor - Low on-resistance - VDSS voltage rating of 100V - ID continuous current rating of 110A - Fast switching speed - Low gate charge - TO-247 package type - Suitable for a variety of high power applications. -
Pinout
The IXTH110N10L2 is a MOSFET transistor with a TO-220 package. It has 3 pins: gate (G), drain (D), and source (S). The gate pin controls the flow of current between the drain and source pins. -
Manufacturer
The manufacturer of the IXTH110N10L2 is IXYS Corporation. IXYS Corporation is a global company that specializes in the design, manufacture, and marketing of power semiconductors, integrated circuits, and other electronic devices. They cater to various industries such as automotive, consumer electronics, industrial, and telecommunications. -
Application Field
The IXTH110N10L2 is a power MOSFET transistor that is commonly used in various applications, including motor control, power supplies, consumer electronics, battery chargers, and solid-state relays. -
Package
The IXTH110N10L2 chip is a power MOSFET transistor packaged in a TO-247 form. It has a size of approximately 15.75mm x 20.07mm x 5.84mm (0.62" x 0.79" x 0.23").
We provide high quality products, thoughtful service and after sale guarantee
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We have rich products, can meet your various needs.
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Minimum order quantity starts from 1pcs.
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Lowest international shipping fee starts from $0.00
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365 days quality guarantee for all products