Orders Over
$5000IXTP26P20P
Trans MOSFET P-CH 200V 26A 3-Pin(3+Tab) TO-220
![ISO14001](/img/about/iso14001.png)
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![DUNS](/img/about/duns.png)
Brands: IXYS
Mfr.Part #: IXTP26P20P
Datasheet: IXTP26P20P Datasheet (PDF)
Package/Case: TO-220-3
Product Type: Single FETs, MOSFETs
RoHS Status:
Stock Condition: 9,458 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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IXTP26P20P General Description
The superior performance of the IXTP26P20P MOSFET makes it a top choice for engineers looking to optimize their power management solutions. With its reduced RDSon and Qg values, this MOSFET offers improved efficiency and reliability in various applications, from automotive electronics to industrial automation
Features
- Low-inductance construction
- Fast switching capability
- Robust operating range
- Dynamic dv/dt performance
Application
- Precision automatic test equipment
- Robust high-side switching
Specifications
Parameter | Value | Parameter | Value |
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Manufacturer: | IXYS | Product Category: | MOSFET |
RoHS: | Details | Technology: | Si |
Mounting Style: | Through Hole | Package / Case: | TO-220-3 |
Transistor Polarity: | P-Channel | Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 200 V | Id - Continuous Drain Current: | 26 A |
Rds On - Drain-Source Resistance: | 170 mOhms | Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 2 V | Qg - Gate Charge: | 56 nC |
Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 300 W | Channel Mode: | Enhancement |
Series: | IXTP26P20 | Packaging: | Tube |
Brand: | IXYS | Configuration: | Single |
Fall Time: | 21 ns | Forward Transconductance - Min: | 10 S |
Height: | 9.15 mm | Length: | 10.66 mm |
Product Type: | MOSFET | Rise Time: | 33 ns |
Factory Pack Quantity: | 50 | Subcategory: | MOSFETs |
Transistor Type: | 1 P-Channel | Typical Turn-Off Delay Time: | 46 ns |
Typical Turn-On Delay Time: | 18 ns | Width: | 4.83 mm |
Unit Weight: | 0.068784 oz |
Shipping
Shipping Type | Ship Fee | Lead Time | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The IXTP26P20P is a high-speed, low-loss Power MOSFET chip designed for efficient power management applications. With a high current rating and low on-state resistance, this chip provides reliable performance in a compact package. Its advanced technology allows for improved power efficiency and reduced heat generation, making it an ideal choice for various power electronics applications.
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Equivalent
Some equivalent products to the IXTP26P20P chip include the IRFP260PBF, FQP27P25, and IRFB52N15DPBF. These chips have similar specifications and can be used as replacements for the IXTP26P20P in various applications. -
Features
IXTP26P20P is a 200V, 26A low VCE(sat) Trench Gate IGBT designed for high speed switching applications. It has low VCE(sat) to reduce power dissipation, integrated dissipater diode for improved efficiency, and low thermal resistance for better thermal performance. It also has high breakdown voltage and short circuit ruggedness. -
Pinout
The IXTP26P20P is a power MOSFET with a TO-220 package, has 3 pins, and is designed for use in high current applications. Pin 1 is the gate, Pin 2 is the drain, and Pin 3 is the source. It is commonly used in power supplies, motor control, and lighting applications. -
Manufacturer
The IXTP26P20P is manufactured by IXYS Corporation, a leading global power semiconductor company specializing in the development and production of advanced power semiconductors, integrated circuits, and RF systems. They provide technology-driven products for a wide range of industries, including automotive, industrial, telecommunications, and consumer electronics. -
Application Field
The IXTP26P20P, a power MOSFET, is commonly used in high-power and high-frequency applications such as switch mode power supplies, motor control, and inverters due to its low on-state resistance and high current carrying capability. It is also used in automotive and industrial applications requiring efficient power management and high reliability. -
Package
The IXTP26P20P chip is a power MOSFET transistor. It comes in a TO-220 package, which is a through-hole package with three terminals. The size of the package is approximately 10.92 mm x 4.57 mm x 16.51 mm.
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Minimum order quantity starts from 1pcs.
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365 days quality guarantee for all products