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IXTP3N120
The IXTP3N120 transistor has a typical switching time of 700ns
Brands: LITTELFUSE INC
Mfr.Part #: IXTP3N120
Datasheet: IXTP3N120 Datasheet (PDF)
Package/Case: TO-220-3
RoHS Status:
Stock Condition: 7,318 pcs, New Original
Product Type: Single FETs, MOSFETs
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $4.253 | $4.253 |
| 10 | $4.051 | $40.510 |
| 50 | $3.933 | $196.650 |
| 100 | $3.812 | $381.200 |
| 500 | $3.756 | $1878.000 |
| 1000 | $3.732 | $3732.000 |
In Stock: 7,318 PCS
IXTP3N120 General Description
The IXTP3N120, from IXYS Corporation, is a high-voltage, high-speed insulated-gate bipolar transistor (IGBT) tailored for power electronics applications. Its maximum collector-emitter voltage (VCE) of 1200 volts and continuous collector current (IC) rating of 3 amps position it for high-voltage and substantial power loads. Its rapid switching capabilities make it suitable for applications demanding quick on/off transitions, improving efficiency and lessening switching losses in power conversion systems. Enclosed in a TO-220AB package, the IXTP3N120 offers effective heat dissipation and uncomplicated mounting, simplifying its integration into various electronic designs. Its wide-ranging applications encompass industrial motor drives, power supplies, renewable energy systems (e.g., solar or wind power inverters), and electric vehicle (EV) charging stations. Through rigorous testing and quality control, IXYS upholds its reputation for delivering high-quality power semiconductor devices, ensuring the reliability and consistent performance of the IXTP3N120 in demanding applications
Features
- Rugged Polysilicon Gate Cell structure
- International standard packages ensured
- Ultra-low RDS(on) performance guaranteed
- Avalanche rated for reliable operation
Application
- Great for high voltages
- Efficient pulse control
- Reliable triggers
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Rohs Code | Yes | Part Life Cycle Code | Active |
| Ihs Manufacturer | LITTELFUSE INC | Reach Compliance Code | compliant |
| ECCN Code | EAR99 | Samacsys Manufacturer | LITTELFUSE |
| Additional Feature | AVALANCHE RATED | Avalanche Energy Rating (Eas) | 700 mJ |
| Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 1200 V | Drain Current-Max (ID) | 3 A |
| Drain-source On Resistance-Max | 4.5 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 60 pF | JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 | Number of Elements | 1 |
| Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 °C | Operating Temperature-Min | -55 °C |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT | Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 200 W | Pulsed Drain Current-Max (IDM) | 12 A |
| Surface Mount | NO | Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The IXTP3N120 is a high voltage, high speed N-channel enhancement mode power MOSFET. It is designed for use in low frequency power applications, offering low on-state resistance and fast switching speeds. This chip is commonly used in power supplies, motor control, and other industrial applications that require high efficiency and reliability.
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Equivalent
Some equivalent products of IXTP3N120 chip are IXYS IXTP3N120P3, Infineon IPP120N03S4L-H, and ON Semiconductor NTMFD9500NT1G. These products have similar specifications and performance characteristics to the IXTP3N120. -
Features
IXTP3N120 is a 1200V, 3A power MOSFET designed for high voltage applications. It features low on-resistance, high current capability, and a fast switching speed. This MOSFET is suitable for use in power supplies, motor control, and other high voltage applications. -
Pinout
IXTP3N120 is a N-channel power MOSFET with a pin count of 3: gate (G), drain (D), and source (S). It is used for high power switching applications due to its low on-state resistance and high current capacity. -
Manufacturer
IXTP3N120 is manufactured by IXYS Corporation, a company that specializes in the design, manufacture, and marketing of power semiconductors. They provide high-performance products for a variety of industries including power management, telecommunications, and automotive.IXYS Corporation is a leading global supplier of power semiconductors. -
Application Field
IXTP3N120 is a high-performance, low RDS(on) power MOSFET transistor commonly used in applications such as motor controls, power supplies, and DC-DC converters. It is also suitable for use in electronic ballasts, uninterruptible power supplies, and inverters due to its high current-carrying capability and low gate charge. -
Package
The IXTP3N120 chip is in a TO-220AB package with a through hole form. It is a N-Channel IGBT with a size of 204.28mm².
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