Orders Over
$5000IXXH110N65C4
High-voltage, high-current power module for efficient energy management
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Brands: IXYS
Mfr.Part #: IXXH110N65C4
Datasheet: IXXH110N65C4 Datasheet (PDF)
Package/Case: TO-247AD-3
Product Type: Single IGBTs
RoHS Status:
Stock Condition: 9,458 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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IXXH110N65C4 General Description
Meet the IXXH110N65C4 power transistor, a high-performance component designed for power electronics applications that require efficiency and reliability. With a VDS of 650 volts, an ID of 110 amperes, and an RDS(on) of 75 milliohms, this transistor is engineered for high-power tasks where minimizing conduction losses is critical. Infineon Technologies' CoolMOS™ C4 series technology further enhances the transistor's capabilities, promoting superior thermal management and overall efficiency. Its low switching and conduction losses not only improve energy efficiency but also reduce heat generation, ensuring sustained performance even in challenging environments
Features
- High current rating of 110A with low on-state voltage drop
- This IGBT features fast switching and low power losses
- N-Channel technology ensures efficient power conversion
Application
- Faster charging speed
- Improved productivity
- Consistent power output
Specifications
Parameter | Value | Parameter | Value |
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Manufacturer: | IXYS | Product Category: | IGBT Transistors |
RoHS: | Details | Technology: | Si |
Package / Case: | TO-247AD-3 | Mounting Style: | Through Hole |
Configuration: | Single | Collector- Emitter Voltage VCEO Max: | 650 V |
Collector-Emitter Saturation Voltage: | 2.35 V | Maximum Gate Emitter Voltage: | - 20 V, + 20 V |
Continuous Collector Current at 25 C: | 235 A | Pd - Power Dissipation: | 880 W |
Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 175 C |
Series: | Trench | Packaging: | Tube |
Brand: | IXYS | Continuous Collector Current Ic Max: | 110 A |
Gate-Emitter Leakage Current: | 100 nA | Product Type: | IGBT Transistors |
Factory Pack Quantity: | 30 | Subcategory: | IGBTs |
Tradename: | XPT |
Shipping
Shipping Type | Ship Fee | Lead Time | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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IXXH110N65C4 is a high voltage, high current IGBT chip designed for use in power electronics applications. It has a voltage rating of 650V and a current rating of 110A, making it suitable for high-power applications such as motor drives and industrial inverters. The C4 designation indicates that it is a fast-switching, low-loss chip with improved performance characteristics.
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Equivalent
Equivalent products of IXXH110N65C4 chip include IRFHB42S (Infineon Technologies), SCT2H12NZ (Rohm Semiconductor), and NDH722CT (ON Semiconductor). These chips are all power MOSFETs with similar specifications and features for various applications in power electronics and industrial systems. -
Features
1. High voltage (650V) and current (110A) rating 2. On-state resistance of 0.065 ohms 3. Fast switching speed 4. Low gate charge for improved efficiency 5. Suitable for high power applications 6. Reliable and durable design. -
Pinout
IXXH110N65C4 is a high power, fast switching IGBT module with a collector current of 110 A, a collector-emitter voltage of 650 V, and a power dissipation of 1100 W. It has 4 pins: gate, collector, emitter, and monitor. -
Manufacturer
IXXH110N65C4 is manufactured by Infineon Technologies AG, a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensors. Infineon's products are used in various industries such as automotive, industrial, and consumer electronics. The company is known for its high-quality and innovative solutions in the semiconductor market. -
Application Field
IXXH110N65C4 is a high voltage power MOSFET that can be used in applications such as industrial power supplies, motor control, solar inverters, and renewable energy systems. It is also suitable for use in high power switching applications, voltage regulators, and DC-DC converters. -
Package
The IXXH110N65C4 chip has a TO-268 package type, is in a single MOSFET form, and is a size of 10.3 mm x 8.9 mm x 4.3 mm.
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