Orders Over
$5000K4B1G1646G-BCK0
DDR DRAM, 64MX16, 0.225ns, CMOS, PBGA96
Brands: SAMSUNG SEMICONDUCTOR INC
Mfr.Part #: K4B1G1646G-BCK0
Datasheet: K4B1G1646G-BCK0 Datasheet (PDF)
Package/Case: FBGA-96
Product Type: DRAMs
RoHS Status:
Stock Condition: 6,554 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Ovaga has a large stock of K4B1G1646G-BCK0 DRAMs from SAMSUNG SEMICONDUCTOR INC and we guarantee that they are original,brand new parts sourced directly from SAMSUNG SEMICONDUCTOR INC We can provide quality testing reports for K4B1G1646G-BCK0 upon your request. To obtain a quote, simply fill in the required quantity, contact name, and email address in the quick quote form on the right. Our sales representative will contact you within 12 hours.
Specifications
Parameter | Value | Parameter | Value |
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Pbfree Code | Yes | Rohs Code | Yes |
Part Life Cycle Code | Obsolete | Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC |
Package Description | FBGA, BGA96,9X16,32 | Reach Compliance Code | compliant |
ECCN Code | EAR99 | HTS Code | 8542.32.00.32 |
Access Time-Max | 0.225 ns | Clock Frequency-Max (fCLK) | 800 MHz |
I/O Type | COMMON | Interleaved Burst Length | 4,8 |
JESD-30 Code | R-PBGA-B96 | JESD-609 Code | e3 |
Memory Density | 1073741824 bit | Memory IC Type | DDR3 DRAM |
Memory Width | 16 | Moisture Sensitivity Level | 1 |
Number of Terminals | 96 | Number of Words | 67108864 words |
Number of Words Code | 64000000 | Organization | 64MX16 |
Output Characteristics | 3-STATE | Package Body Material | PLASTIC/EPOXY |
Package Code | FBGA | Package Equivalence Code | BGA96,9X16,32 |
Package Shape | RECTANGULAR | Package Style | GRID ARRAY, FINE PITCH |
Peak Reflow Temperature (Cel) | 260 | Power Supplies | 1.5 V |
Qualification Status | Not Qualified | Refresh Cycles | 8192 |
Sequential Burst Length | 4,8 | Standby Current-Max | 0.01 A |
Supply Current-Max | 0.195 mA | Supply Voltage-Nom (Vsup) | 1.5 V |
Surface Mount | YES | Technology | CMOS |
Terminal Finish | MATTE TIN | Terminal Form | BALL |
Terminal Pitch | 0.8 mm |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The K4B1G1646G-BCK0 chip is a DDR3 SDRAM manufactured by Samsung. It has a capacity of 1Gb (Gigabit) and operates at a speed of 1600MHz. It is commonly used in various electronic devices like computers, laptops, and gaming consoles for memory storage and data processing.
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Equivalent
The K4B1G1646G-BCK0 chip is a 1Gb DDR3 SDRAM manufactured by Samsung. Equivalent products include Micron MT41J256M8HX-15E and Hynix H5TQ1G83BFR. They share similar specifications and functionality, compatible with various electronic devices such as computers, smartphones, and embedded systems. -
Features
The K4B1G1646G-BCK0 is a DDR3 SDRAM chip with a capacity of 1Gb (128MB) and operates at 1.5V. It features a speed of 1866MHz (PC3-14900) and supports burst lengths of 4 and 8. The chip is organized as 8 banks of 2M x 16. -
Pinout
The K4B1G1646G-BCK0 is a 78-pin BGA DDR3 SDRAM chip with a capacity of 1GB. The pin functions include power supply, address inputs, data inputs/outputs, control signals, and clock inputs. It is commonly used in computer systems and other electronic devices for high-speed data processing and storage. -
Manufacturer
Samsung is the manufacturer of the K4B1G1646G-BCK0. It's a South Korean multinational conglomerate known for its electronics, including semiconductors, memory chips, and consumer electronics. Samsung operates in various sectors such as information technology, construction, and finance, making it one of the world's largest technology companies. -
Application Field
The K4B1G1646G-BCK0 is a DDR3 SDRAM chip typically used in various electronic devices like laptops, desktop computers, servers, networking equipment, and consumer electronics. Its applications include memory modules, graphics cards, motherboards, and embedded systems, contributing to efficient data processing and storage in these devices. -
Package
The K4B1G1646G-BCK0 chip is a DDR3 SDRAM chip. It comes in a 96-ball FBGA (Fine-pitch Ball Grid Array) package, with a form factor of 13.5mm x 9mm. The size of the chip is 8 Gigabits (1 Gigabyte).
We provide high quality products, thoughtful service and after sale guarantee
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We have rich products, can meet your various needs.
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Minimum order quantity starts from 1pcs.
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Lowest international shipping fee starts from $0.00
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365 days quality guarantee for all products