Microchip LND150N8

Part points

• The LND150N8 is a power MOSFET transistor designed for high voltage applications in power management and switching circuits. It has a maximum drain-source voltage of 80V and a continuous drain current of 0.25A. The LND150N8 is suitable for use in various electronic devices requiring high efficiency and reliability.

• Equivalent

  The equivalent products of the LND150N8 chip are the LND150N3, LND150N5, and LND150N6. These are N-channel JFET transistors with similar specifications and characteristics to the LND150N8.

• Features

  The LND150N8 is an N-channel, enhancement-mode lateral field-effect transistor (FET) with a high input impedance, low on-resistance, and low capacitance. It is designed for low power applications and offers high voltage capability of up to 150 volts.

• Pinout

  The LND150N8 is a N-channel depletion-mode MOSFET with 8 pins. It is typically used for low noise, high gain amplifier applications. Pin functions include gate (G), drain (D), source (S), and body (B).

• Manufacturer

  The manufacturer of LND150N8 is Microsemi Corporation, a company that specializes in semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. It is a global leader in the design and manufacturing of high-performance components used in these industries.

• Application Field

  The LND150N8 is a power enhancement mode field-effect transistor (FET) commonly used for high-speed switching applications in power supplies, motor control, and inverter circuits. It is also utilized in amplifiers, audio equipment, LED drivers, and battery management systems. The LND150N8 offers high current capacity and efficient power handling capabilities, making it ideal for a variety of industrial and consumer electronics applications.

• Package

  The LND150N8 is a TO-92 package type chip, with a through-hole form factor. It measures approximately 6.6mm x 5.2mm x 3.68mm in size.