This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Orders Over

$5000
Get a $50 Discount !

MJE210G 48HRS

Bipolar (BJT) Transistor PNP 40 V 5 A 65MHz 15 W Through Hole TO-126

ISO14001 ISO9001 DUNS

Brands: onsemi

Mfr.Part #: MJE210G

Datasheet: MJE210G Datasheet (PDF)

Package/Case: TO-225-3

RoHS Status:

Stock Condition: 9,458 pcs, New Original

Product Type: Single Bipolar Transistors

Warranty: 1 Year Ovaga Warranty - Find Out More

Pricing

*All prices are in USD

Qty Unit Price Ext Price
1 $0.534 $0.534
10 $0.442 $4.420
30 $0.398 $11.940
100 $0.354 $35.400
500 $0.327 $163.500
1000 $0.312 $312.000

In Stock: 9,458 PCS

- +

Quick Quote

Please submit RFQ for MJE210G or email to us: Email: [email protected], we will contact you within 12 hours.

MJE210G General Description

With a focus on precision engineering and high-quality materials, this transistor offers superior performance and longevity. Its compact size and easy installation make it perfect for DIY projects or commercial applications. The MJE210G sets a new standard for power transistors in the audio industry, delivering unrivaled performance and value

Features

  • Piezoelectric Material - Ceramic Type
  • Operating Temperature Range -40°C to +125°C
  • Low Distortion - Low Noise Performance
  • Fine Pitch Lead Frame for Small Size
  • RoHS Compliant Packaging Available
  • Surface Mountable for Easy Assembly

Specifications

Parameter Value Parameter Value
Manufacturer: onsemi Product Category: Bipolar Transistors - BJT
RoHS: Details Mounting Style: Through Hole
Package / Case: TO-225-3 Transistor Polarity: PNP
Configuration: Single Collector- Emitter Voltage VCEO Max: 40 V
Collector- Base Voltage VCBO: 40 V Emitter- Base Voltage VEBO: 8 V
Collector-Emitter Saturation Voltage: 1.8 V Maximum DC Collector Current: 5 A
Pd - Power Dissipation: 15 W Gain Bandwidth Product fT: 65 MHz
Minimum Operating Temperature: - Maximum Operating Temperature: + 150 C
Series: MJE210 Packaging: Bulk
Brand: onsemi Continuous Collector Current: 5 A
DC Collector/Base Gain hfe Min: 70 Height: 11.04 mm
Length: 7.74 mm Product Type: BJTs - Bipolar Transistors
Factory Pack Quantity: 500 Subcategory: Transistors
Technology: Si Width: 2.66 mm
Unit Weight: 0.023986 oz Package Bulk
Product Status Active Transistor Type PNP
Current - Collector (Ic) (Max) 5 A Voltage - Collector Emitter Breakdown (Max) 40 V
Vce Saturation (Max) @ Ib, Ic 1.8V @ 1A, 5A Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 45 @ 2A, 1V Power - Max 15 W
Frequency - Transition 65MHz Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Through Hole Package / Case TO-225AA, TO-126-3
Supplier Device Package TO-126

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The MJE210G is a transistor chip used for high-voltage, high-current switching applications. It is an NPN bipolar junction transistor (BJT) designed for amplification and switching purposes. The chip offers a collector current of 4A and a collector-emitter voltage of 40V. With its robust design and high-performance characteristics, the MJE210G chip is commonly used in power supply circuits, motor control, and other industrial applications.
  • Equivalent

    There are several equivalent products to the MJE210G chip, including MJE210GR, MJE210GRL, and MJE210GRL1G. These are all NPN silicon transistors primarily used in general-purpose amplifier and switching applications.
  • Features

    The MJE210G is a transistor with a PNP bipolar junction configuration. It has a collector current capability of 2A, a collector-base voltage of -40V, and a power dissipation of 20W. It is designed for general-purpose amplifier and switching applications.
  • Pinout

    The MJE210G is a bipolar junction transistor with a pin count of 3. Its pins are labeled as Collector (C), Base (B), and Emitter (E). The Collector terminal collects current, the Base terminal controls the current flow, and the Emitter terminal emits the current.
  • Manufacturer

    The MJE210G transistor is manufactured by ON Semiconductor. ON Semiconductor is a multinational semiconductor company that specializes in power management, sensor, and connectivity solutions. It designs and produces a wide range of products used in various industries, including automotive, industrial, computing, consumer, and aerospace.
  • Application Field

    The MJE210G is a bipolar power transistor typically used for switching and amplification, making it suitable for applications in audio amplifiers, power supplies, motor control, and other electronic devices requiring high power.
  • Package

    The MJE210G chip is a transistor that comes in a TO-225AA package form. The package dimensions are approximately 4.8mm x 4.6mm x 9.4mm.

We provide high quality products, thoughtful service and after sale guarantee

  • Product

    We have rich products, can meet your various needs.

  • quantity

    Minimum order quantity starts from 1pcs.

  • shipping

    Lowest international shipping fee starts from $0.00

  • guarantee

    365 days quality guarantee for all products

Ratings and Reviews

Ratings
Please rate the product !
Please enter a comment

Please submit comments after logging into your account.

Submit

Recommend

  • AO4292E

    AO4292E

    Alpha & Omega Semiconductor Inc.

    High-quality 100V 8A SOIC-8 MOSFET with 23mΩ resi...

  • VQ1004P

    VQ1004P

    Vishay

    VQ1004P by Siliconix

  • STS4DPF30L

    STS4DPF30L

    Stmicroelectronics

    Dual P-channel MOSFET Transistor STS4DPF30L featur...

  • STS9D8NH3LL

    STS9D8NH3LL

    STMicroelectronics

    Dual N-channel 30V MOSFET, with 0.012 Ohm resistan...

  • RFP30P05

    RFP30P05

    Onsemi

    MOSFET Power P-Channel TO-220AB

  • NE3210S01-T1B

    NE3210S01-T1B

    Cel

    High-Frequency NE3210S01-T1B Transistor: Incorpora...