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Orders Over
$5000MMDF2C03HDR2G
MOSFET COMP S08C 30V 4.1A 70mOhm
Brands: onsemi
Mfr.Part #: MMDF2C03HDR2G
Datasheet: MMDF2C03HDR2G Datasheet (PDF)
Package/Case: 8-SOIC
Product Type: FET, MOSFET Arrays
RoHS Status:
Stock Condition: 5,994 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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MMDF2C03HDR2G General Description
The MMDF2C03HDR2G is a reliable and efficient option for designers and engineers in need of a power MOSFET solution for their low voltage, high speed switching applications. Its miniature size, low RDS(on), and true logic level performance make it an ideal choice for applications where power efficiency is crucial. The device's ability to withstand high energy in the avalanche and commutation modes, paired with its low reverse recovery time for the drain-to-source diode, sets it apart from other options on the market
Features
- Soft Recovery for Reduced EMI
- High Efficiency with Low VF
- Pulse by Pulse Current Limiting
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Manufacturer | onsemi | Product Category | MOSFET |
| RoHS | Details | Technology | Si |
| Mounting Style | SMD/SMT | Package / Case | SOIC-8 |
| Transistor Polarity | N-Channel, P-Channel | Number of Channels | 2 Channel |
| Vds - Drain-Source Breakdown Voltage | 30 V | Id - Continuous Drain Current | 4.1 A |
| Rds On - Drain-Source Resistance | 70 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 2 W | Channel Mode | Enhancement |
| Brand | onsemi | Configuration | Dual |
| Fall Time | 23 ns, 194 ns | Forward Transconductance - Min | 3.6 S |
| Height | 1.5 mm | Length | 5 mm |
| Product Type | MOSFET | Rise Time | 65 ns, 18 ns |
| Factory Pack Quantity | 2500 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel, 1 P-Channel | Type | MOSFET |
| Typical Turn-Off Delay Time | 30 ns, 81 ns | Typical Turn-On Delay Time | 12 ns, 16 ns |
| Width | 4 mm |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The MMDF2C03HDR2G is a MOSFET H-bridge power switch designed for high-speed switching applications. It offers low ON-resistance and space-saving packaging, making it ideal for use in automotive, industrial, and consumer electronics applications. This chip is capable of controlling high current and voltage levels effectively, improving system efficiency and performance.
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Equivalent
The equivalent products of MMDF2C03HDR2G chip are FDMS86181 and FDMS86101BZ. These are both dual N-channel PowerTrench MOSFETs with similar specifications and performance characteristics. -
Features
MMDF2C03HDR2G is a high-gain, low noise figure GaAs MESFET RF amplifier with a frequency range of 5 to 500 MHz. It offers high linearity, high gain, and low power consumption, making it suitable for various communication and RF applications. -
Pinout
The MMDF2C03HDR2G is a dual 2:1 Mux/Demux switch with a pin count of 56. It is used for data routing and signal switching applications in communication systems and networking equipment. It features high-speed operation and low crosstalk performance. -
Manufacturer
The manufacturer of MMDF2C03HDR2G is ON Semiconductor, which is a semiconductor manufacturing company. They design and produce a wide range of power management, connectivity, and analog semiconductor products for a variety of industries, including automotive, industrial, and consumer electronics. -
Application Field
MMDF2C03HDR2G is a high-power, low-loss Schottky diode commonly used in applications such as RF detector circuits, high-frequency mixers, and signal demodulation. Its high power handling capability makes it suitable for use in radar systems, microwave communications, and other high-frequency applications requiring fast switching speeds and low noise. -
Package
The MMDF2C03HDR2G chip is housed in a DFN-8 (2mm x 2mm) package. It is a high-speed, high-voltage MOSFET driver with a peak output current of 2A, designed for driving small and medium power N-channel MOSFETs in high-speed switching applications.
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