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MUN5111T1G
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 202 mW Surface Mount SC-70-3 (SOT323)
![ISO14001](/img/about/iso14001.png)
![ISO9001](/img/about/iso9001.png)
![DUNS](/img/about/duns.png)
Brands: onsemi
Mfr.Part #: MUN5111T1G
Datasheet: MUN5111T1G Datasheet (PDF)
Package/Case: SC-70-3
RoHS Status:
Stock Condition: 9,458 pcs, New Original
Product Type: Single, Pre-Biased Bipolar Transistors
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
Qty | Unit Price | Ext Price |
---|---|---|
20 | $0.034 | $0.680 |
200 | $0.028 | $5.600 |
600 | $0.024 | $14.400 |
3000 | $0.022 | $66.000 |
9000 | $0.020 | $180.000 |
21000 | $0.019 | $399.000 |
In Stock: 9,458 PCS
MUN5111T1G General Description
This product, MUN5111T1G, is a PNP digital transistor with a built-in bias resistor network, featuring R1 and R2 values of 10 kilo ohm each. It is a small signal bipolar transistor capable of handling a maximum collector current (I(C)) of 0.1A and a collector-emitter breakdown voltage (V(BR)CEO) of 50V. This single-element, silicon-based transistor is designed to meet the needs of various electronic devices and systems
Features
- Increased Scalability
- Improved Multi-Threading Support
- Simplified Software Updates
- Increased Data Storage Capacity
Specifications
Parameter | Value | Parameter | Value |
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Manufacturer: | onsemi | Product Category: | Bipolar Transistors - Pre-Biased |
RoHS: | Details | Configuration: | Single |
Transistor Polarity: | PNP | Typical Input Resistor: | 10 kOhms |
Typical Resistor Ratio: | 1 | Mounting Style: | SMD/SMT |
Package / Case: | SC-70-3 | DC Collector/Base Gain hfe Min: | 35 |
Collector- Emitter Voltage VCEO Max: | 50 V | Continuous Collector Current: | 100 mA |
Peak DC Collector Current: | 100 mA | Pd - Power Dissipation: | 202 mW |
Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
Series: | MUN5111 | Packaging: | MouseReel |
Brand: | onsemi | Height: | 0.85 mm |
Length: | 2.1 mm | Product Type: | BJTs - Bipolar Transistors - Pre-Biased |
Factory Pack Quantity: | 3000 | Subcategory: | Transistors |
Width: | 1.24 mm |
Shipping
Shipping Type | Ship Fee | Lead Time | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The MUN5111T1G is a high-voltage NPN silicon transistor designed for various switching applications in automotive and industrial systems. It features a collector-emitter voltage of 50V and a collector current of 8A, making it suitable for high-power applications. Additionally, the chip is housed in a SOT-23 package for easy integration into existing circuit designs.
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Equivalent
Some equivalent products of MUN5111T1G chip are ON Semiconductor MUN5111DW1T1G, Infineon BSS84P, Fairchild MMBT5551LT1G, and Texas Instruments TLV3501AIDBVT. These products are all NPN transistors with similar features and specifications to the MUN5111T1G chip. -
Features
MUN5111T1G is a high voltage general purpose transistor with integrated protection diode. It has a collector-emitter voltage of 50V, collector current of 500mA, and a power dissipation of 1.5W. It is ideal for switching applications in industries such as automotive, telecommunications, and consumer electronics. -
Pinout
The MUN5111T1G is a dual NPN bipolar transistor with a pin count of 3. It is used for general-purpose amplification or switching applications in electronic circuits. The pin functions are Collector (C), Base (B), and Emitter (E) for each transistor in the dual package. -
Manufacturer
MUN5111T1G is manufactured by ON Semiconductor, a multinational semiconductor supplier headquartered in Phoenix, Arizona. ON Semiconductor specializes in power and signal management, logic, discrete, and custom devices for applications in diverse industries, including automotive, communications, and consumer electronics. -
Application Field
MUN5111T1G is a high-speed, general-purpose switching diode that can be used in various applications such as rectification, high-speed switching, voltage clamping, and freewheeling diodes in automotive, industrial, and consumer electronics. It is commonly found in power supplies, voltage regulators, and signal processing circuits. -
Package
The MUN5111T1G chip is a surface mount transistor packaged in a SOT-23 form with a size of 2.93mm x 1.30mm x 1.30mm.
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We have rich products, can meet your various needs.
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Minimum order quantity starts from 1pcs.
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365 days quality guarantee for all products