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ON NTJD4158CT1G

Name: NTJD4158CT1G
Brand: ON Semiconductor, LLC
Rating: 4.8 (6 reviews)

MOSFETs- Power and Small Signal PFET 20V .88A 1OHM

Brands: ON Semiconductor, LLC

Mfr.Part #: NTJD4158CT1G

Datasheet: NTJD4158CT1G Datasheet (PDF)

Package/Case: SC-70-6

Product Type: FET, MOSFET Arrays

RoHS Status:

Stock Condition: 3,921 pcs, New Original

Warranty: 1 Year Ovaga Warranty - Find Out More

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NTJD4158CT1G General Description

Whether you are designing circuitry for consumer electronics, industrial machinery, or telecommunications equipment, the NTJD4158CT1G MOSFET transistor provides the performance and reliability you need. Its complemented N and P channel configuration, along with its low on-resistance and high power dissipation capabilities, make it a versatile and efficient component for a wide range of applications. Consider incorporating the NTJD4158CT1G into your next design to benefit from its compact size, moderate power handling, and reliable operation. With its MSL 1 - Unlimited moisture sensitivity rating and compliance with SVHC regulations, this transistor is a safe and dependable choice for your projects

Features

Low Noise and EMI Immunity
High Temperature Operating Capability
Wide Input Voltage Range and Overvoltage Protection
Soft Startup and Shutdown Control for Low Inrush Current
Economical Design with High Reliability
SMT Package for Easy Mounting and Handling

Application

Low Power Consumption
Short Circuit Detection
Thermal Management

Specifications

Parameter	Value	Parameter	Value
Source Content uid	NTJD4158CT1G	Pbfree Code	Yes
Part Life Cycle Code	Active	Ihs Manufacturer	ONSEMI
Part Package Code	SC-88/SC70-6/SOT-363 6 LEAD	Package Description	SC-88, SC-70, 6 PIN
Pin Count	6	Manufacturer Package Code	419B-02
Reach Compliance Code	compliant	ECCN Code	EAR99
HTS Code	8541.29.00.95	Factory Lead Time	51 Weeks
Samacsys Manufacturer	onsemi	Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
DS Breakdown Voltage-Min	30 V	Drain Current-Max (ID)	0.25 A
Drain-source On Resistance-Max	2.5 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	12 pF	JESD-30 Code	R-PDSO-G6
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	2	Number of Terminals	6
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Operating Temperature-Min	-55 °C	Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR	Package Style	SMALL OUTLINE
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (Abs)	0.27 W	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	Matte Tin (Sn) - annealed
Terminal Form	GULL WING	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	40	Transistor Application	SWITCHING
Transistor Element Material	SILICON	feature-category	Small Signal
feature-material		feature-process-technology	TMOS
feature-configuration	Dual	feature-channel-mode	Enhancement
feature-channel-type	P\|N	feature-number-of-elements-per-chip	2
feature-maximum-drain-source-voltage-v	20@P Channel\|30@N Channel	feature-maximum-gate-source-voltage-v	±12@P Channel\|±20@N Channel
feature-maximum-gate-threshold-voltage-v	1.5	feature-maximum-continuous-drain-current-a	0.88@P Channel\|0.25@N Channel
feature-maximum-drain-source-resistance-mohm	[email protected]@P Channel\|[email protected]@N Channel	feature-typical-gate-charge-vgs-nc	[email protected]@P Channel\|0.9@5V@N Channel
feature-typical-gate-charge-10v-nc		feature-typical-input-capacitance-vds-pf	155@20V@P Channel\|20@5V@N Channel
feature-typical-output-capacitance-pf	25@P Channel\|19@N Channel	feature-maximum-power-dissipation-mw	270
feature-packaging	Tape and Reel	feature-rad-hard
feature-pin-count	6	feature-supplier-package	SC-88
feature-standard-package-name1	SOT	feature-cecc-qualified	No
feature-esd-protection	Yes	feature-military	No
feature-aec-qualified	No	feature-aec-qualified-number
feature-auto-motive	No	feature-p-pap	No
feature-eccn-code	EAR99	feature-svhc	No
feature-svhc-exceeds-threshold	No

Shipping

	Ship Fee	Lead Time
DHL	$20.00-$40.00 (0.50 KG)	2-5 days
Fedex	$20.00-$40.00 (0.50 KG)	2-5 days
UPS	$20.00-$40.00 (0.50 KG)	2-5 days
TNT	$20.00-$40.00 (0.50 KG)	2-5 days
EMS	$20.00-$40.00 (0.50 KG)	2-5 days
REGISTERED AIR MAIL	$20.00-$40.00 (0.50 KG)	2-5 days

Processing Time：Shipping fee depend on different zone and country.

Payment

Terms of payment		Hand Fee
	Wire Transfer	charge US$30.00 banking fee.
	Paypal	charge 4.0% service fee.
	Credit Card	charge 3.5% service fee.
	Western Union	charge US.00 banking fee.
	Money Gram	charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

Step1 :Product
Step2 :Vacuum packaging
Step3 :Anti-static bag
Step4 :Individual packaging
Step5 :Packaging boxes
Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

Part points

NTJD4158CT1G is a N-channel MOSFET designed for high-speed switching applications. It features low on-resistance, high drain current capability, and low gate charge. The chip is suitable for various power management and voltage regulation applications in electronic devices.
Equivalent

Some equivalent products of the NTJD4158CT1G chip include the NDT3055L, NDF6N40ZG, and NTMFS4C05N. These are all N-channel Power MOSFETs with similar specifications and performance characteristics, making them suitable alternatives for various applications.
Features

NTJD4158CT1G is a Small Signal Field-Effect Transistor (FET) with a low ON resistance, high current handling capability, and high input impedance. It is designed for applications requiring high power and efficiency, such as switching circuits and low noise amplifiers. Its compact size and high performance make it ideal for use in a wide range of electronic devices.
Pinout

The NTJD4158CT1G is a P-channel MOSFET transistor with a pin count of 3. The gate (G) pin controls the flow of current between the source (S) and drain (D) pins. The drain pin is usually connected to the positive voltage source, while the source pin is connected to the load or ground.
Manufacturer

NTJD4158CT1G is manufactured by ON Semiconductor Corporation. ON Semiconductor Corporation is a leading supplier of semiconductor-based solutions for a variety of electronic devices and industries, including automotive, industrial, and communications. The company specializes in providing power management, analog, and sensor products to help customers design and manufacture innovative products.
Application Field

NTJD4158CT1G is commonly used in applications such as load switch, power management, and voltage regulation in various electronic devices like smartphones, tablets, laptops, and other portable devices. It is also used in power distribution systems, battery management, and voltage detection circuits due to its low on-resistance and high current-carrying capability.
Package

The NTJD4158CT1G chip is available in a DPAK (TO-252) package, with a form of surface mount, and a size of 6.6mm x 6.6mm x 4.4mm.