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ON NTMFS4C029NT1G

Name: NTMFS4C029NT1G
Rating: 4.5 (6 reviews)

N-Channel 30 V 15A (Ta), 46A (Tc) 2.49W (Ta), 23.6W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

Brands: ON Semiconductor, LLC

Mfr.Part #: NTMFS4C029NT1G

Datasheet: NTMFS4C029NT1G Datasheet (PDF)

Package/Case: TDFN-8

RoHS Status:

Stock Condition: 2,262 pcs, New Original

Product Type: Single FETs, MOSFETs

Warranty: 1 Year Ovaga Warranty - Find Out More

Pricing

*All prices are in USD

Qty	Unit Price	Ext Price
5	$0.326	$1.630
50	$0.268	$13.400
150	$0.243	$36.450
1500	$0.211	$316.500
3000	$0.197	$591.000
4500	$0.189	$850.500

In Stock: 2,262 PCS

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Quick Quote

Please submit RFQ for NTMFS4C029NT1G or email to us: Email: [email protected], we will contact you within 12 hours.

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Remark

NTMFS4C029NT1G General Description

N-Channel 30 V 15A (Ta), 46A (Tc) 2.49W (Ta), 23.6W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

Features

Ultra-Low On-State Resistance
Compact and Highly Efficient Design
Excellent Thermal Performance Guarantee
Fast Switching Speed for High-Power Applications
Lithium-Ion Compatible and AEC-Q100 Qualified
Robust ESD Protection for Longer Lifespan

Application

Smart Power Distribution
Flexible Power Options
Integrated Power Management

Specifications

Parameter	Value	Parameter	Value
Source Content uid	NTMFS4C029NT1G	Pbfree Code	Yes
Part Life Cycle Code	Active	Ihs Manufacturer	ONSEMI
Manufacturer Package Code	488AA	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	67 Weeks
Date Of Intro	2016-08-08	Samacsys Manufacturer	onsemi
Avalanche Energy Rating (Eas)	31 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	30 V
Drain Current-Max (ID)	8.2 A	Drain-source On Resistance-Max	0.0058 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PDSO-F5
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	5
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Operating Temperature-Min	-55 °C	Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR	Package Style	SMALL OUTLINE
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	23.6 W	Pulsed Drain Current-Max (IDM)	132 A
Surface Mount	YES	Terminal Finish	Matte Tin (Sn) - annealed
Terminal Form	FLAT	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON	feature-category	Power MOSFET
feature-material		feature-process-technology
feature-configuration	Single Quad Drain Triple Source	feature-channel-mode	Enhancement
feature-channel-type	N	feature-number-of-elements-per-chip	1
feature-maximum-drain-source-voltage-v	30	feature-maximum-gate-source-voltage-v	±20
feature-maximum-gate-threshold-voltage-v	2.2	feature-maximum-continuous-drain-current-a	15
feature-maximum-drain-source-resistance-mohm	5.88@10V	feature-typical-gate-charge-vgs-nc	[email protected]\|18.6@10V
feature-typical-gate-charge-10v-nc	18.6	feature-typical-input-capacitance-vds-pf	987@15V
feature-typical-output-capacitance-pf		feature-maximum-power-dissipation-mw	5600
feature-packaging	Tape and Reel	feature-rad-hard
feature-pin-count	5	feature-supplier-package	SO-FL EP
feature-standard-package-name1	DFN	feature-cecc-qualified
feature-esd-protection		feature-military	No
feature-aec-qualified	No	feature-aec-qualified-number
feature-auto-motive	No	feature-p-pap	No
feature-eccn-code	EAR99	feature-svhc	Yes
feature-svhc-exceeds-threshold	Yes

Shipping

	Ship Fee	Lead Time
DHL	$20.00-$40.00 (0.50 KG)	2-5 days
Fedex	$20.00-$40.00 (0.50 KG)	2-5 days
UPS	$20.00-$40.00 (0.50 KG)	2-5 days
TNT	$20.00-$40.00 (0.50 KG)	2-5 days
EMS	$20.00-$40.00 (0.50 KG)	2-5 days
REGISTERED AIR MAIL	$20.00-$40.00 (0.50 KG)	2-5 days

Processing Time：Shipping fee depend on different zone and country.

Payment

Terms of payment		Hand Fee
	Wire Transfer	charge US$30.00 banking fee.
	Paypal	charge 4.0% service fee.
	Credit Card	charge 3.5% service fee.
	Western Union	charge US.00 banking fee.
	Money Gram	charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

Step1 :Product
Step2 :Vacuum packaging
Step3 :Anti-static bag
Step4 :Individual packaging
Step5 :Packaging boxes
Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

Part points

NTMFS4C029NT1G is a Power M Field-Effect Transistor (FET) chip from ON Semiconductor that is often used in power management applications. It offers low on-resistance and high current-handling capability, making it ideal for use in high-efficiency power supplies, DC-DC converters, and motor control circuits.
Equivalent

The equivalent products of NTMFS4C029NT1G chip are: 1. IRF7807D1PBF 2. FDS8958A 3. FDS6912A 4. BSC0906N15NS3G 5. NTMFS4C2810N 6. FDB83N15TM These chips are all power MOSFETs with similar specifications and features as the NTMFS4C029NT1G.
Features

NTMFS4C029NT1G is a Power MOSFET with a low ON-resistance, high switching performance, and low gate charge. It also features a small footprint and a high current capability, making it suitable for power management applications in space-constrained designs.
Pinout

The NTMFS4C029NT1G is a MOSFET with a pin count of 8. It is a N-channel Power MOSFET used for high-speed switching applications in power supplies and DC-DC converters. The functions of the pins are Gate (G), Drain (D), Source (S), and various other connections for optimal performance.
Manufacturer

The manufacturer of the NTMFS4C029NT1G is ON Semiconductor, a multinational semiconductor supplier. ON Semiconductor specializes in designing and manufacturing power management and digital signal processing products for a variety of industries including automotive, industrial, and consumer electronics.
Application Field

The NTMFS4C029NT1G is typically used in power management applications such as voltage regulation, load switches, motor control, and battery charging. It offers low on-state resistance, high current handling capability, and fast switching speeds, making it suitable for a wide range of power electronics designs.
Package

The NTMFS4C029NT1G chip is a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) and comes in a surface mount package. It has a form factor of 5mm x 6mm and a size of 8-pin Dual Asymmetric Leadless Package (DALP).