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Orders Over
$5000ON NVMFS6H818NWFT1G
N-Channel 80 V 20A (Ta), 123A (Tc) 3.8W (Ta), 136W (Tc) Surface Mount, Wettable Flank 5-DFNW (4.9x5.9) (8-SOFL-WF)
Brands: ON Semiconductor, LLC
Mfr.Part #: NVMFS6H818NWFT1G
Datasheet: NVMFS6H818NWFT1G Datasheet (PDF)
Package/Case: SO-FL EP
Product Type: Single FETs, MOSFETs
RoHS Status:
Stock Condition: 2,379 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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NVMFS6H818NWFT1G General Description
With the NVMFS6H818NWFT1G, you can trust that you are getting a top-quality Automotive Power MOSFET that has been rigorously tested and proven to meet the stringent standards of the automotive industry. Its compact size, high thermal performance, and Wettable Flank Option make it a standout choice for automotive applications where efficiency, reliability, and performance are paramount
Features
- High Speed Operation
- Low Power Consumption
- Compact Design
- EMI/RFI Immunity
- Wide Operating Temperature
- AEC−Q100 Qualified and PPAP Capable
Application
- Grid-tied inverters
- Battery management
- Pulse width modulation
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Manufacturer: | ON Semiconductor | Product Category: | MOSFET |
| RoHS: | Y | Technology: | Si |
| Mounting Style: | SMD/SMT | Package / Case: | SO-8FL |
| Number of Channels: | 1 Channel | Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 80 V | Id - Continuous Drain Current: | 123 A |
| Rds On - Drain-Source Resistance: | 3.1 mOhms | Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Vgs - Gate-Source Voltage: | 20 V | Qg - Gate Charge: | 46 nC |
| Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 175 C |
| Pd - Power Dissipation: | 136 W | Configuration: | Single |
| Channel Mode: | Enhancement | Qualification: | AEC-Q101 |
| Packaging: | Reel | Transistor Type: | 1 N-Channel |
| Brand: | ON Semiconductor | Forward Transconductance - Min: | 170 S |
| Fall Time: | 21 ns | Product Type: | MOSFET |
| Rise Time: | 98 ns | Factory Pack Quantity: | 1500 |
| Subcategory: | MOSFETs | Typical Turn-Off Delay Time: | 49 ns |
| Typical Turn-On Delay Time: | 22 ns | Tags | NVMFS6H, NVMFS6, NVMFS, NVMF, NVM |
| Unit Weight: | 0.026455 oz |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The NVMFS6H818NWFT1G is a high-performance 60V N-channel Power MOSFET designed for high-efficiency switching applications. It features low gate charge and low on-resistance, making it ideal for use in battery management, motor control, and power supply applications. The chip is housed in a compact PowerFLAT 5x6 package for optimized thermal performance.
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Equivalent
The equivalent products of NVMFS6H818NWFT1G chip are NVMFS3H853NWFT1G, NVMFS5H860NWFT1G, NVMFS6F080NWFT1G, NVMFS5H847NWFT1G, NVMFS2545NWFT1G, NVMFS5100NWFT1G, NVMFS4575NF, and NVMFS2545NT1G. -
Features
The NVMFS6H818NWFT1G is a 60 V, 5.5 mΩ, 120 A N-channel MOSFET with a maximum power dissipation of 220 W. It features low on-resistance, excellent switching performance, and a compact footprint, making it suitable for high current power management applications. -
Pinout
The NVMFS6H818NWFT1G is a 1-ch MOSFET with a pin count of 8. It is an N-channel Power MOSFET with a high side configuration, suitable for high current applications with a voltage rating of 60V and a maximum continuous drain current of 56A. -
Manufacturer
NVMFS6H818NWFT1G is manufactured by ON Semiconductor, a leading supplier of power management solutions. ON Semiconductor is a semiconductor company that specializes in energy-efficient power management, sensors, and signal management products. Their technology helps customers design innovative products that increase energy efficiency and reduce environmental impact. -
Application Field
The NVMFS6H818NWFT1G is commonly used in power management applications such as voltage regulation and current protection in automotive systems, industrial automation, and telecommunications equipment. It is also suitable for use in LED lighting, motor control, and battery management applications. -
Package
The NVMFS6H818NWFT1G chip is a PowerPAK SO-8 package with a form of surface mount and a size of 5mm x 6mm x 1mm.
Datasheet PDF
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