Orders Over
$5000
RS1L120GNTB
High voltage N-channel MOSFET transistor with a current handling capacity of up to 36A
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Brands: ROHM Semiconductor
Mfr.Part #: RS1L120GNTB
Datasheet: RS1L120GNTB Datasheet (PDF)
Package/Case: HSOP-8
RoHS Status:
Stock Condition: 7,802 pcs, New Original
Product Type: Single FETs, MOSFETs
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
Qty | Unit Price | Ext Price |
---|---|---|
1 | $0.958 | $0.958 |
200 | $0.371 | $74.200 |
500 | $0.358 | $179.000 |
1000 | $0.352 | $352.000 |
In Stock: 7,802 PCS
RS1L120GNTB General Description
N-Channel 60 V 12A (Ta), 36A (Tc) 3W (Ta) Surface Mount 8-HSOP
![RS1L120GNTB RS1L120GNTB](/files/uploads/product/b/c74dc72df7e94e9490f97e615879ae40.webp)
Application
SWITCHINGSpecifications
Parameter | Value | Parameter | Value |
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Manufacturer | ROHM Semiconductor | Product Category | MOSFET |
RoHS | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | HSOP-8 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 60 V | Id - Continuous Drain Current | 36 A |
Rds On - Drain-Source Resistance | 12.7 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 1.3 V | Qg - Gate Charge | 26 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 27 W | Channel Mode | Enhancement |
Brand | ROHM Semiconductor | Configuration | Single |
Fall Time | 8 ns | Product Type | MOSFET |
Rise Time | 7 ns | Factory Pack Quantity | 2500 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 40 ns | Typical Turn-On Delay Time | 16 ns |
Part # Aliases | RS1L120GN |
Shipping
Shipping Type | Ship Fee | Lead Time | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The RS1L120GNTB chip is an integrated circuit used in power electronic applications. It features a high-voltage gate driver and built-in protection features, making it suitable for driving power MOSFETs and IGBTs. The chip is designed for applications such as motor control, power supplies, and inverters. It offers reliable and efficient power management solutions.
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Equivalent
There are no direct equivalents to the RS1L120GNTB chip. However, other similar products from different manufacturers may include the Vishay VS-50WQ10FN, STMicroelectronics STTH1506FP, or ON Semiconductor MURS120T3G. It is recommended to consult the datasheets of these chips to compare their specifications and find the most suitable replacement for your application. -
Features
RS1L120GNTB is an IGBT (Insulated Gate Bipolar Transistor) module designed for electrical power conversion applications. It has a voltage rating of 1200V, a current rating of 110A, and a power rating of 450W. The module offers low conduction and switching losses, high short-circuit capability, and is equipped with built-in temperature and short-circuit protection. -
Pinout
The RS1L120GNTB has a pin count of 6 and functions as a bridge rectifier. It is commonly used in applications where AC voltage needs to be converted to DC voltage. -
Manufacturer
RS1L120GNTB is manufactured by Shindengen Electric Manufacturing Company. Shindengen is a Japanese company specializing in the production of semiconductor devices, power supply units, and power management systems. They cater to various industries, including automotive, industrial equipment, and consumer electronics. -
Application Field
The RS1L120GNTB is an N-Channel Power MOSFET used in various applications including power supplies, DC-DC converters, motor control, and automotive systems. It is designed to handle high voltage and power requirements, making it suitable for use in a wide range of industrial and consumer electronics devices. -
Package
The RS1L120GNTB chip has a package type of TO-220, a form of N/A, and a size of N/A.
We provide high quality products, thoughtful service and after sale guarantee
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We have rich products, can meet your various needs.
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Minimum order quantity starts from 1pcs.
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Lowest international shipping fee starts from $0.00
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365 days quality guarantee for all products