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$5000SI7469DP-T1-E3
SI7469DP-T1-E3 is a MOSFET designed with an -80V Vds and a 20V Vgs, enclosed in a PowerPAK SO-8 package
![ISO14001](/img/about/iso14001.png)
![ISO9001](/img/about/iso9001.png)
![DUNS](/img/about/duns.png)
Brands: Vishay
Mfr.Part #: SI7469DP-T1-E3
Datasheet: SI7469DP-T1-E3 Datasheet (PDF)
Package/Case: PowerPAK-SO-8
Product Type: Single FETs, MOSFETs
RoHS Status:
Stock Condition: 5,014 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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SI7469DP-T1-E3 General Description
The SI7469DP-T1-E3 is a P-channel MOSFET designed for high-power applications. With a continuous drain current of -28A and a drain source voltage of -80V, this transistor offers reliable and efficient performance. Its low on-resistance of 0.021ohm and high power dissipation of 83W make it suitable for demanding tasks, whether in industrial, automotive, or consumer electronics
![](/files/uploads/product/b/14e45643b90d4a8d8c82d2eb102dfbed.webp)
Features
- Wide operating temperature range
- Excellent thermal performance
- Low noise and vibration
- Precise control and measurement
Application
- Precise switching control
- Durable battery management
- Flexible overvoltage protection
Specifications
Parameter | Value | Parameter | Value |
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Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | PowerPAK-SO-8 | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 80 V |
Id - Continuous Drain Current | 28 A | Rds On - Drain-Source Resistance | 29 mOhms |
Vgs - Gate-Source Voltage | + 20 V | Vgs th - Gate-Source Threshold Voltage | 3 V |
Qg - Gate Charge | 160 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 83 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI7 | Brand | Vishay Semiconductors |
Configuration | Single | Fall Time | 110 ns |
Forward Transconductance - Min | 52 S | Height | 1.04 mm |
Length | 6.15 mm | Product Type | MOSFET |
Rise Time | 220 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 95 ns | Typical Turn-On Delay Time | 45 ns |
Width | 5.15 mm | Part # Aliases | SI7469DP-E3 |
Unit Weight | 0.017870 oz |
Shipping
Shipping Type | Ship Fee | Lead Time | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The SI7469DP-T1-E3 is a high-speed, dual N-channel MOSFET power switch designed for load switches in portable applications. It features a low on-resistance and high current-handling capability, making it ideal for use in battery-powered devices where efficiency and reliability are crucial. This chip is commonly used in smartphones, tablets, and other handheld electronic devices.
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Equivalent
Some equivalent products of SI7469DP-T1-E3 chip are Infineon BSP742R and ON Semiconductor NTB74202N. These are all high-side smart power switches with similar features and specifications suitable for various applications. -
Features
SI7469DP-T1-E3 is a 20V, 60A p-channel MOSFET with low on-resistance and guaranteed avalanche performance. It is lead-free and RoHS-compliant, making it suitable for high-efficiency power management applications. It also has a compact footprint and is designed to handle high power densities. -
Pinout
The SI7469DP-T1-E3 is a dual P-channel MOSFET with a pin count of 8. Pin functions include gate (G), source (S), and drain (D) for the two P-channel MOSFETs. This device is commonly used for power management applications where high efficiency and compact size are required. -
Manufacturer
SI7469DP-T1-E3 is manufactured by Vishay Intertechnology, an American company that specializes in manufacturing discrete semiconductors and passive electronic components. Vishay Intertechnology is a global industry leader in creating components for a wide range of applications, including automotive, industrial, consumer, military, and aerospace sectors. -
Application Field
SI7469DP-T1-E3 is a P-channel MOSFET specifically designed for power management applications, including load switching and battery protection. It is commonly used in portable devices, IoT devices, and power supply modules. It offers low on-state resistance and high efficiency, making it suitable for high-performance and energy-efficient applications. -
Package
The SI7469DP-T1-E3 chip is a dual P-channel MOSFET in a PowerPAIR package. It comes in a reel form with a size of 4mm x 6mm.
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