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SI7469DP-T1-E3

SI7469DP-T1-E3 is a MOSFET designed with an -80V Vds and a 20V Vgs, enclosed in a PowerPAK SO-8 package

ISO14001 ISO9001 DUNS

Brands: Vishay

Mfr.Part #: SI7469DP-T1-E3

Datasheet: SI7469DP-T1-E3 Datasheet (PDF)

Package/Case: PowerPAK-SO-8

Product Type: Single FETs, MOSFETs

RoHS Status:

Stock Condition: 5,014 pcs, New Original

Warranty: 1 Year Ovaga Warranty - Find Out More

Quick Quote

Please submit RFQ for SI7469DP-T1-E3 or email to us: Email: [email protected], we will contact you within 12 hours.

SI7469DP-T1-E3 General Description

The SI7469DP-T1-E3 is a P-channel MOSFET designed for high-power applications. With a continuous drain current of -28A and a drain source voltage of -80V, this transistor offers reliable and efficient performance. Its low on-resistance of 0.021ohm and high power dissipation of 83W make it suitable for demanding tasks, whether in industrial, automotive, or consumer electronics

Features

  • Wide operating temperature range
  • Excellent thermal performance
  • Low noise and vibration
  • Precise control and measurement

Application

  • Precise switching control
  • Durable battery management
  • Flexible overvoltage protection

Specifications

Parameter Value Parameter Value
Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case PowerPAK-SO-8 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 80 V
Id - Continuous Drain Current 28 A Rds On - Drain-Source Resistance 29 mOhms
Vgs - Gate-Source Voltage + 20 V Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 160 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 83 W
Channel Mode Enhancement Tradename TrenchFET
Series SI7 Brand Vishay Semiconductors
Configuration Single Fall Time 110 ns
Forward Transconductance - Min 52 S Height 1.04 mm
Length 6.15 mm Product Type MOSFET
Rise Time 220 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 95 ns Typical Turn-On Delay Time 45 ns
Width 5.15 mm Part # Aliases SI7469DP-E3
Unit Weight 0.017870 oz

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The SI7469DP-T1-E3 is a high-speed, dual N-channel MOSFET power switch designed for load switches in portable applications. It features a low on-resistance and high current-handling capability, making it ideal for use in battery-powered devices where efficiency and reliability are crucial. This chip is commonly used in smartphones, tablets, and other handheld electronic devices.
  • Equivalent

    Some equivalent products of SI7469DP-T1-E3 chip are Infineon BSP742R and ON Semiconductor NTB74202N. These are all high-side smart power switches with similar features and specifications suitable for various applications.
  • Features

    SI7469DP-T1-E3 is a 20V, 60A p-channel MOSFET with low on-resistance and guaranteed avalanche performance. It is lead-free and RoHS-compliant, making it suitable for high-efficiency power management applications. It also has a compact footprint and is designed to handle high power densities.
  • Pinout

    The SI7469DP-T1-E3 is a dual P-channel MOSFET with a pin count of 8. Pin functions include gate (G), source (S), and drain (D) for the two P-channel MOSFETs. This device is commonly used for power management applications where high efficiency and compact size are required.
  • Manufacturer

    SI7469DP-T1-E3 is manufactured by Vishay Intertechnology, an American company that specializes in manufacturing discrete semiconductors and passive electronic components. Vishay Intertechnology is a global industry leader in creating components for a wide range of applications, including automotive, industrial, consumer, military, and aerospace sectors.
  • Application Field

    SI7469DP-T1-E3 is a P-channel MOSFET specifically designed for power management applications, including load switching and battery protection. It is commonly used in portable devices, IoT devices, and power supply modules. It offers low on-state resistance and high efficiency, making it suitable for high-performance and energy-efficient applications.
  • Package

    The SI7469DP-T1-E3 chip is a dual P-channel MOSFET in a PowerPAIR package. It comes in a reel form with a size of 4mm x 6mm.

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  • quantity

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