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vishay SIHG20N50C-E3
SIHG20N50C-E3 is a MOSFET with a voltage rating of 500V and a maximum current of 20A, featuring a low on-resistance of 270mΩ at 10V and 10A
Brands: Vishay
Mfr.Part #: SIHG20N50C-E3
Datasheet: SIHG20N50C-E3 Datasheet (PDF)
Package/Case: TO-247-3
RoHS Status:
Stock Condition: 9,458 pcs, New Original
Product Type: Single FETs, MOSFETs
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $1.193 | $1.193 |
| 10 | $1.089 | $10.890 |
| 25 | $1.000 | $25.000 |
| 100 | $0.931 | $93.100 |
| 500 | $0.902 | $451.000 |
| 1000 | $0.887 | $887.000 |
In Stock: 9,458 PCS
SIHG20N50C-E3 General Description
The SIHG20N50C-E3 is a top-of-the-line 500V N-channel enhancement mode power MOSFET that boasts a massive 20A continuous drain current capability. Its ultra-low on-state resistance of 0.17 ohms makes it the perfect choice for high power applications where efficiency is paramount. Housed in a TO-247 package, this MOSFET delivers exceptional thermal performance, ensuring efficient heat dissipation even under heavy loads. With a mere 40nC gate charge, the SIHG20N50C-E3 enables lightning-fast switching speeds and minimizes switching losses, leading to improved overall system performance
Features
- This device has a Vds rating of 500V, max current of 20A, and Rds(on) of 0.15ohm
- A high-power device designed for reliability and efficiency
- Packed in TO-247AC for easy mounting and heat dissipation
- Features low RDS(on) for improved energy efficiency and reliability
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Manufacturer: | Vishay | Product Category: | MOSFET |
| RoHS: | Details | Technology: | Si |
| Mounting Style: | Through Hole | Package / Case: | TO-247-3 |
| Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 500 V | Id - Continuous Drain Current: | 20 A |
| Rds On - Drain-Source Resistance: | 270 mOhms | Vgs - Gate-Source Voltage: | - 30 V, + 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V | Qg - Gate Charge: | 65 nC |
| Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 250 mW | Channel Mode: | Enhancement |
| Packaging: | Tube | Brand: | Vishay / Siliconix |
| Configuration: | Single | Fall Time: | 44 ns |
| Forward Transconductance - Min: | 6.4 S | Height: | 20.82 mm |
| Length: | 15.87 mm | Product Type: | MOSFET |
| Rise Time: | 27 ns | Factory Pack Quantity: | 500 |
| Subcategory: | MOSFETs | Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 32 ns | Typical Turn-On Delay Time: | 80 ns |
| Width: | 5.31 mm |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The SIHG20N50C-E3 is a power MOSFET semiconductor designed for high voltage and high-speed switching applications. It features a drain-source voltage rating of 500V, a continuous drain current of 20A, and low on-resistance for efficient operation. This chip is commonly used in power supplies, motor control, and lighting applications.
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Equivalent
The equivalent products of the SIHG20N50C-E3 chip include the STW21N50K3, IRG4BC20UDPBF, and FGH60N60SMD. These are MOSFET transistors with similar specifications and performance characteristics suitable for power switching applications. -
Features
The SIHG20 -
Pinout
The SIHG20N50C-E3 is a MOSFET transistor with a pin count of 3. Its functions include regulating and controlling voltage and current in electronic circuits. It has a maximum voltage of 500V and current of 20A. -
Manufacturer
Infineon Technologies AG is the manufacturer of the SIHG20N50C-E3. It is a German semiconductor manufacturing company specializing in power semiconductors, sensors, and microcontrollers. Founded in 1999, Infineon is one of the largest semiconductor companies in the world with a strong focus on automotive, industrial, renewable energy, and security applications. -
Application Field
The SIHG20N50C-E3 is commonly used in applications requiring high voltage and current handling capabilities, such as power supplies, motor control, and switch-mode power supplies. Its features make it suitable for various industrial, automotive, and renewable energy applications, including inverters, welding equipment, and solar inverters. -
Package
The SIHG20N50C-E3 chip is a power MOSFET with a TO-247AC package type, a through-hole mounting form, and dimensions typically measuring 15.75mm x 20.17mm x 4.83mm (L x W x H).
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