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TOSHIBA SSM3K2615R,LF
Attributes: N Channel type, ROHS compliant, SSM3K2615R,LF model number, compact SOT-23F package
Brands: Toshiba
Mfr.Part #: SSM3K2615R,LF
Datasheet: SSM3K2615R,LF Datasheet (PDF)
Package/Case: SOT23F-3
RoHS Status:
Stock Condition: 9,458 pcs, New Original
Product Type: Single FETs, MOSFETs
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 5 | $0.249 | $1.245 |
| 50 | $0.205 | $10.250 |
| 150 | $0.185 | $27.750 |
| 500 | $0.162 | $81.000 |
| 3000 | $0.142 | $426.000 |
| 6000 | $0.135 | $810.000 |
In Stock: 9,458 PCS
SSM3K2615R,LF General Description
The SSM3K2615R,LF is a state-of-the-art dual N-channel MOSFET that delivers outstanding performance in low-voltage applications. With its ultra-low threshold voltage of just 0.6V, this MOSFET is perfect for power-sensitive devices like smartphones and tablets, where efficient power management is crucial. Its maximum drain-source voltage of 20V and maximum drain current of 1.5A make it well-suited for handling moderate power loads, while its ultra-small TSSOP-6 package ensures compatibility with space-constrained designs. The device's low on-resistance of 0.35 ohms results in minimal power loss and high efficiency, contributing to extended battery life in portable devices. Additionally, the SSM3K2615R,LF features a fast switching speed, which not only reduces switching losses but also enhances overall system performance
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Manufacturer: | Toshiba | Product Category: | MOSFET |
| RoHS: | Details | Technology: | Si |
| Mounting Style: | SMD/SMT | Package / Case: | SOT-23F-3 |
| Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 60 V | Id - Continuous Drain Current: | 2 A |
| Rds On - Drain-Source Resistance: | 300 mOhms | Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 800 mV | Qg - Gate Charge: | 6 nC |
| Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 2 W | Channel Mode: | Enhancement |
| Qualification: | AEC-Q101 | Tradename: | MOSV |
| Series: | SSM3K2615 | Packaging: | MouseReel |
| Brand: | Toshiba | Configuration: | Single |
| Fall Time: | 50 ns | Height: | 0.9 mm |
| Length: | 2.9 mm | Product Type: | MOSFET |
| Rise Time: | 25 ns | Factory Pack Quantity: | 3000 |
| Subcategory: | MOSFETs | Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 150 ns | Typical Turn-On Delay Time: | 30 ns |
| Width: | 1.3 mm |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The SSM3K2615R,LF chip is a 20V N-channel MOSFET designed for low on-resistance in a small package. It is commonly used in power management applications such as load switches, battery protection circuits, and DC-DC converters. The chip features high efficiency and low power consumption, making it ideal for portable electronic devices.
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Equivalent
Some equivalent products to the SSM3K2615R,LF chip are Vishay's SI2303CDS-T1-GE3, Diodes Inc's DMG1026UW-7, and Nexperia's PSMN1R1-30YLC. These are all similar P-Channel MOSFETs with comparable specifications and performance characteristics. -
Features
Features of SSM3K2615R,LF: 1. N-channel enhancement mode MOSFET 2. Small footprint surface mount package (TSMT5) 3. Low threshold voltage of 0.7V 4. Low on-state resistance of 1.5 ohms 5. Low gate input capacitance for fast switching speeds. -
Pinout
The SSM3K2615R,LF is a Dual N-channel MOSFET with a pin count of 6 (SOT-353 package). It is suitable for low voltage, low current switching applications. The functions of the pins are: Pin 1 (Source1), Pin 2 (Gate1), Pin 3 (Drain1), Pin 4 (Source2), Pin 5 (Gate2), Pin 6 (Drain2). -
Manufacturer
The manufacturer of the SSM3K2615R,LF is Toshiba Semiconductor & Storage. Toshiba Semiconductor & Storage is a leading supplier of semiconductor and storage solutions, focusing on memory, microcontrollers, power devices, and optical semiconductors. The company is known for its innovative technologies and high-quality products in the electronics industry. -
Application Field
The SSM3K2615R,LF is a small signal MOSFET commonly used in applications such as power management, battery protection, load switching, and voltage regulation. It is ideal for portable electronic devices, smartphones, tablets, and other battery-powered applications where low on-resistance and low gate charge are critical for efficient performance. -
Package
The SSM3K2615R,LF chip is in a MOSFET package type, with a surface-mount form, and measures 2.9mm x 2.8mm x 1.0mm in size.
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