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Orders Over
$5000STD18N55M5
N-Channel 550 V 16A (Tc) 110W (Tc) Surface Mount DPAK
Brands: STMICROELECTRONICS
Mfr.Part #: STD18N55M5
Datasheet: STD18N55M5 Datasheet (PDF)
Package/Case: DPAK
Product Type: Single FETs, MOSFETs
RoHS Status:
Stock Condition: 8,615 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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STD18N55M5 General Description
With the fusion of MDmesh M5 vertical processing and PowerMESH horizontal design, the STD18N55M5 stands out as a premier choice for power applications requiring superior efficiency. Its ultra-low on-resistance sets it apart from competitors, ensuring optimal performance in demanding environments. Whether used in power supplies, motor control units, or automotive systems, this Power MOSFET excels in delivering power with precision and reliability
Features
- High-temperature operation up to 150°C
- Low thermal noise
- Excellent stability
Application
- Power Management
- Industrial
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Source Content uid | STD18N55M5 | Rohs Code | Yes |
| Part Life Cycle Code | Active | Ihs Manufacturer | STMICROELECTRONICS |
| Part Package Code | TO-252 | Package Description | DPAK-3 |
| Pin Count | 3 | Reach Compliance Code | not_compliant |
| ECCN Code | EAR99 | Factory Lead Time | 52 Weeks |
| Samacsys Manufacturer | STMicroelectronics | Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 550 V | Drain Current-Max (ID) | 14 A |
| Drain-source On Resistance-Max | 0.21 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-252 | JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
| Number of Elements | 1 | Number of Terminals | 2 |
| Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE | Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 90 W |
| Pulsed Drain Current-Max (IDM) | 56 A | Qualification Status | Not Qualified |
| Surface Mount | YES | Terminal Finish | Matte Tin (Sn) - annealed |
| Terminal Form | GULL WING | Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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![Product]( "Product")
Step1 :Product
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![Vacuum packaging]( "Vacuum packaging")
Step2 :Vacuum packaging
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![Anti-static bag]( "Anti-static bag")
Step3 :Anti-static bag
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![Individual packaging]( "Individual packaging")
Step4 :Individual packaging
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Step5 :Packaging boxes
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![bar-code shipping tag]( "bar-code shipping tag")
Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The STD18N55M5 chip is a power MOSFET designed for efficient switching applications. It has a voltage rating of 55V and a continuous drain current of 18A. This chip offers low conduction and switching losses, making it suitable for various power conversion applications. It is commonly used in automotive, industrial, and consumer electronics applications for its reliable performance and high power efficiency.
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Equivalent
Some equivalent products of the STD18N55M5 chip include the FDP18N50, IRFP260N, and STP18N50M5 power MOSFETs. -
Features
The STD18N55M5 is a N-channel Power MOSFET with a low on-resistance, making it suitable for various power applications. It offers high power dissipation, fast switching speeds, and low gate charge. Additionally, it has integrated protection features like over-temperature and over-current protection, ensuring safe and reliable operation in different scenarios. -
Pinout
The STD18N55M5 is a power MOSFET transistor with a TO-252 package (DPAK) and a pin count of 3. The pins and their functions are: Pin 1 = Gate (G), Pin 2 = Drain (D), and Pin 3 = Source (S). -
Manufacturer
The manufacturer of the STD18N55M5 is STMicroelectronics. It is a multinational semiconductor manufacturing company that designs and produces a wide range of electronic components, including microcontrollers, power transistors, and sensors. -
Application Field
The STD18N55M5 is a power MOSFET transistor designed for use in high voltage applications. It can be commonly used in various fields such as power supplies, motor control circuits, lighting systems, and automotive applications. -
Package
The STD18N55M5 chip is available in a PowerFLAT package type, featuring a compact form factor and measuring approximately 6.1 by 2.6 mm in size.
We provide high quality products, thoughtful service and after sale guarantee
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