Orders Over
$5000STP100N6F7
N-Channel 60 V 100A (Tc) 125W (Tc) Through Hole TO-220
![ISO14001](/img/about/iso14001.png)
![ISO9001](/img/about/iso9001.png)
![DUNS](/img/about/duns.png)
Brands: STMicroelectronics
Mfr.Part #: STP100N6F7
Datasheet: STP100N6F7 Datasheet (PDF)
Package/Case: TO-220-3
Product Type: Single FETs, MOSFETs
RoHS Status:
Stock Condition: 9,458 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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STP100N6F7 General Description
With its groundbreaking STripFET™ F7 technology, the STP100N6F7 Power MOSFET sets a new standard for efficiency and performance in the field of power electronics. This innovative component features a unique trench gate structure that significantly lowers on-state resistance, leading to enhanced energy savings and reduced heat generation. Additionally, the advanced design helps to minimize internal capacitance and gate charge, enabling faster and more precise switching operations that benefit a wide range of applications. Whether used in industrial machinery, automotive systems, or consumer electronics, the STP100N6F7 offers unparalleled advantages in terms of reliability, efficiency, and overall performance, making it a top choice for demanding engineering projects
![](/files/uploads/product/b/2be0652e-7e1e-47d7-b971-22bc5553eb87.webp)
Features
- Low leakage current
- Rugged against voltage spikes
- Suitable for high-frequency applications
Application
- Medical
Specifications
Parameter | Value | Parameter | Value |
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Manufacturer: | STMicroelectronics | Product Category: | MOSFET |
RoHS: | Details | Technology: | Si |
Mounting Style: | Through Hole | Package / Case: | TO-220-3 |
Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 60 V | Id - Continuous Drain Current: | 100 A |
Rds On - Drain-Source Resistance: | 5.6 mOhms | Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 2 V | Qg - Gate Charge: | 30 nC |
Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 125 W | Channel Mode: | Enhancement |
Tradename: | STripFET | Series: | STP100N6F7 |
Packaging: | Tube | Brand: | STMicroelectronics |
Configuration: | Single | Fall Time: | 15 ns |
Product Type: | MOSFET | Rise Time: | 55.5 ns |
Factory Pack Quantity: | 1000 | Subcategory: | MOSFETs |
Transistor Type: | 1 N-Channel Power MOSFET | Typical Turn-Off Delay Time: | 28.6 ns |
Typical Turn-On Delay Time: | 21.6 ns |
Shipping
Shipping Type | Ship Fee | Lead Time | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The STP100N6F7 is a power MOSFET chip designed for high-performance applications. It is capable of handling high voltage and current levels efficiently, making it suitable for power management tasks. This chip provides low on-resistance, fast switching, and excellent thermal performance. It is commonly used in various electronic devices and circuits that require efficient power control and management.
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Features
The STP100N6F7 is a power MOSFET transistor. It features a voltage rating of 60V, a drain current of 100A, and a low on-resistance. It is designed for use in automotive applications, industrial control, and power management systems. -
Pinout
The STP100N6F7 is a MOSFET transistor with a pin count of 3. It functions as a power transistor for high energy efficiency systems with a maximum power dissipation of 100W. -
Manufacturer
The manufacturer of the STP100N6F7 is STMicroelectronics. STMicroelectronics is a multinational semiconductor company that designs, develops, and manufactures a wide range of electronic products. They are known for their expertise in producing semiconductors used in various applications, such as industrial, automotive, and consumer electronics. -
Application Field
The STP100N6F7 is a power MOSFET transistor designed for high voltage and power applications. It can be used in various applications such as power supplies, motor control, industrial equipment, and automotive systems. Its high voltage and power handling capabilities make it suitable for demanding applications that require efficient power switching and control. -
Package
The STP100N6F7 chip is in a TO-220 package type, has a single form (Single Transistor), and the size is approximately 10mm x 15mm x 4.5mm.
We provide high quality products, thoughtful service and after sale guarantee
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We have rich products, can meet your various needs.
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Minimum order quantity starts from 1pcs.
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365 days quality guarantee for all products