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$5000UF3C065030B3
Silicon-carbide based power transistor for high-performance system
Brands: QORVO
Mfr.Part #: UF3C065030B3
Datasheet: UF3C065030B3 Datasheet (PDF)
Package/Case: D2PAK-3
Product Type: Single FETs, MOSFETs
RoHS Status:
Stock Condition: 9,485 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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UF3C065030B3 General Description
Furthermore, the UF3C065030B3 excels in thermal management, owing to its state-of-the-art packaging design featuring a high thermal conductivity substrate and low thermal resistance between the transistors and the heatsink. This design enables reliable operation at high temperatures and power levels, offering peace of mind in demanding operating conditions. In addition, the module incorporates advanced protection features against overcurrent and overtemperature scenarios, guaranteeing safe and secure operation. Its fast and robust intrinsic diode enables efficient freewheeling during reverse current flow, further enhancing its reliability and performance
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Status | Active | FET Type | N-Channel |
| Technology | - | Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 40A, 12V | Vgs(th) (Max) @ Id | 6V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 15 V | Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 100 V | FET Feature | - |
| Power Dissipation (Max) | 242W (Tc) | Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Supplier Device Package | TO-263 (D2Pak) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The UF3C065030B3 is a silicon carbide (SiC) MOSFET chip designed for high power and high temperature applications. It offers low losses, high efficiency, and fast switching capabilities. This chip is suitable for use in power electronic systems, such as electric vehicles, renewable energy systems, and industrial machinery.
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Equivalent
The equivalent products of UF3C065030B3 chip are the STFSC10H65B3, STFSC10H65B3Y, and STFSC10H65B3Y3 chips. These chips are also high voltage SiC technologies that offer similar performance and features as the UF3C065030B3 chip. -
Features
1. 650V Silicon Carbide Power MOSFET 2. 30mΩ on-resistance 3. FAST diode recovery 4. High-speed switching 5. Low gate charge 6. High thermal conductivity 7. Low capacitance 8. Enhanced ruggedness 9. Reduction in overall system cost and size 10. Ideal for high-frequency, high-power applications. -
Pinout
The UF3C065030B3 is a 3-pin device with two power pins and one gate pin. Pin 1 is the source, pin 2 is the gate, and pin 3 is the drain. It is a 650V, 3A SiC FET designed for high efficiency power conversion applications. -
Manufacturer
UnitedSiC is the manufacturer of the UF3C065030B3. It is a semiconductor company that specializes in the design and manufacturing of silicon carbide power semiconductors. UnitedSiC focuses on delivering high performance and efficient solutions for power electronics applications in industries such as automotive, industrial, and renewable energy. -
Application Field
The UF3C065030B3 is primarily used in power supply applications, motor drives, renewable energy systems, and industrial automation. Its high voltage and current capabilities make it suitable for high-power applications where efficiency and reliability are crucial. It is commonly used in inverters, converters, and power management systems in various industries. -
Package
The UF3C065030B3 chip comes in a TO-247 package type. It is in the form of a discrete semiconductor device and has a size of 10.66mm x 5.59mm x 4.57mm.
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