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$5000BLF642,112
Meet BLF642,112 - a MOSFET solution delivering 35W power output, packaged in SOT-467C format and meeting ROHS environmental standards
Brands: Ampleon USA Inc.
Mfr.Part #: BLF642,112
Datasheet: BLF642,112 Datasheet (PDF)
Package/Case: SOT-467C
Product Type: RF FETs, MOSFETs
RoHS Status:
Stock Condition: 8,586 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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BLF642,112 General Description
The BLF642 is a high-performance RF Power Field-Effect Transistor designed for use in L Band applications. This N-Channel Silicon FET boasts superior reliability and efficiency, making it ideal for a wide range of wireless communication systems
Features
- CW performance at 1300 MHz, a drain-source voltage VDSof 32 V and a quiescent drain current IDq=0.2A :
- Average output power = 35 W
- Power gain = 19 dB
- Drain efficiency = 63 %
- 2-tone performance at 1300 MHz, a drain-source voltage VDSof 32 V and a quiescent drain current IDq=0.2A :
- Average output power = 17.5 W
- Power gain = 19 dB
- Drain efficiency = 48 %
- Intermodulation distortion = 28 dBc
- Integrated ESD protection
- Excellent ruggedness
- High power gain
- High efficiency
- Excellent reliability
- Easy power control
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances(RoHS)
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Package | Tray | Product Status | Active |
| Technology | LDMOS | Frequency | 1.3GHz |
| Gain | 19dB | Voltage - Test | 32 V |
| Current - Test | 200 mA | Power - Output | 35W |
| Voltage - Rated | 65 V | Mounting Type | Chassis Mount |
| Package / Case | SOT-467C | Supplier Device Package | SOT467C |
| Base Product Number | BLF642 |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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BLF642,112 is a high-power LDMOS RF transistor chip designed for use in high-frequency amplifiers. It offers excellent linearity, efficiency, and power capabilities, making it ideal for applications such as cellular base stations and broadcast transmitters.
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Equivalent
The equivalent products of BLF642,112 chip are Freescale MRFE6VP61K25H, NXP MRF6VP61K25HR6, and NXP MRF6VP61K25HR5. These are all RF power LDMOS transistors that offer similar performance and specifications to the BLF642,112 chip. -
Features
BLF642,112 is a high power RF transistor for mobile radio applications. It operates at a frequency range of 470-800 MHz with an output power of 44W. This transistor offers high efficiency, compact size, and excellent linearity, making it suitable for various mobile radio applications. -
Pinout
The BLF642,112 is a RF power transistor with a pin count of 2. Pin 1 is the gate/source and Pin 2 is the drain. It is designed for use in high power RF amplifier applications in the UHF frequency range. -
Manufacturer
The BLF642,112 is manufactured by NXP Semiconductors, a global semiconductor manufacturer known for its expertise in designing and producing high-performance integrated circuits used in a wide range of applications. NXP Semiconductors specializes in providing solutions for automotive, industrial, consumer, and communication markets. -
Application Field
The BLF642,112 is commonly used in applications requiring high-power amplification, such as in mobile communication systems, base stations, radar systems, and industrial heating equipment. It is also suitable for use in medical applications, military communication systems, and broadcast stations due to its high efficiency and high-frequency capabilities. -
Package
The BLF642,112 chip is in a SOT539A (SOT669) package. It has a surface mount form and measures 5.9mm x 4.3mm x 1.7mm in size.
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