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$5000MJB44H11T4G
Bipolar (BJT) Transistor NPN 80 V 10 A 50MHz 2 W Surface Mount D²PAK
Brands: onsemi
Mfr.Part #: MJB44H11T4G
Datasheet: MJB44H11T4G Datasheet (PDF)
Package/Case: D2PAK-3
Product Type: Single Bipolar Transistors
RoHS Status:
Stock Condition: 9,458 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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MJB44H11T4G General Description
The MJB44H11T4G is a high-performance power transistor designed for NPN (Negative-Positive-Negative) applications. With a collector-emitter voltage (V(br)ceo) of 80V, this transistor is capable of handling high voltage requirements in various electronic circuits. The transition frequency (ft) of 50MHz makes it ideal for fast switching applications, while the power dissipation (Pd) of 50W ensures reliable performance under heavy load conditions. With a DC collector current of 10A and a DC current gain (hFE) of 40hFE, the MJB44H11T4G provides the necessary amplification and power handling capabilities required in modern electronic devices
Features
- Compact Design Saves Space
- High Efficiency for Longer Battery Life
- Low Power Consumption Ideal for Mobile Devices
Specifications
Parameter | Value | Parameter | Value |
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Manufacturer: | onsemi | Product Category: | Bipolar Transistors - BJT |
RoHS: | Details | Mounting Style: | SMD/SMT |
Package / Case: | D2PAK-3 | Transistor Polarity: | NPN |
Configuration: | Single | Collector- Emitter Voltage VCEO Max: | 80 V |
Collector- Base Voltage VCBO: | - | Emitter- Base Voltage VEBO: | 5 V |
Collector-Emitter Saturation Voltage: | 1 V | Maximum DC Collector Current: | 10 A |
Pd - Power Dissipation: | 50 W | Gain Bandwidth Product fT: | 50 MHz |
Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
Series: | MJB44H11 | Packaging: | MouseReel |
Brand: | onsemi | Continuous Collector Current: | 10 A |
DC Collector/Base Gain hfe Min: | 60 | Height: | 4.83 mm |
Length: | 10.29 mm | Product Type: | BJTs - Bipolar Transistors |
Factory Pack Quantity: | 800 | Subcategory: | Transistors |
Technology: | Si | Width: | 9.65 mm |
Unit Weight: | 0.050054 oz |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The MJB44H11T4G is a high voltage, high-speed NPN transistor chip designed for use in automotive ignition systems. It offers low saturation voltage and fast switching speeds, making it ideal for applications requiring high performance and reliability. This chip is part of ON Semiconductor's wide range of power transistors for automotive and industrial applications.
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Equivalent
The equivalent products of MJB44H11T4G chip are MJB44H11T30G, MJB44H11T5G, and MJB44H11T10G. These chips have similar specifications and characteristics, making them suitable replacements for the original chip in various applications. -
Features
MJB44H11T4G is a N-channel, enhancement mode, fast switching, power MOSFET. It has a high input impedance, low on-state resistance, and is suitable for high-speed switching applications. This MOSFET is designed for use in power management applications such as motor control, power supplies, and inverters. -
Pinout
The MJB44H11T4G is a dual N-channel Power MOSFET with a total of 8 pins. It is typically used for high power and high current applications in industrial and automotive systems. The device functions as a switch to control the flow of current in electronic circuits. -
Manufacturer
MJB44H11T4G is manufactured by ON Semiconductor, a leading supplier of semiconductor-based solutions. ON Semiconductor specializes in power and signal management, discrete and custom solutions for a variety of industries including automotive, communications, consumer electronics, and industrial applications. -
Application Field
MJB44H11T4G is a high-power N-channel MOSFET suitable for applications requiring high power amplification, such as audio amplifiers, power supplies, motor control, and high-frequency converters. It can also be used in automotive and industrial applications where high current and voltage ratings are necessary. -
Package
The MJB44H11T4G chip is a Power MOSFET in a TO-263-3 package. It has a form factor of a surface-mount device with a size of 10mm x 7.6mm x 4.6mm.
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