Images are for reference only See Product Specifications
Orders Over
$5000
MJD112T4G
Bipolar (BJT) Transistor NPN - Darlington 100 V 2 A 25MHz 20 W Surface Mount DPAK
Brands: onsemi
Mfr.Part #: MJD112T4G
Datasheet: MJD112T4G Datasheet (PDF)
Package/Case: DPAK
RoHS Status:
Stock Condition: 9,458 pcs, New Original
Product Type: Single Bipolar Transistors
Warranty: 1 Year Ovaga Warranty - Find Out More
0
1
*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $0.468 | $0.468 |
| 10 | $0.381 | $3.810 |
| 30 | $0.344 | $10.320 |
| 100 | $0.297 | $29.700 |
| 500 | $0.276 | $138.000 |
| 1000 | $0.265 | $265.000 |
In Stock: 9,458 PCS
MJD112T4G General Description
The MJD112T4G Darlington Bipolar Power Transistor is a versatile component that is essential for applications requiring high power and switching capabilities. Ideal for use in output or driver stages in a variety of electronic devices, this transistor offers reliable performance in switching regulators, converters, and power amplifiers. With its NPN design, the MJD112T4G complements the MJD117 (PNP) device, providing a complete and efficient solution for your circuit design needs
Features
- Advanced Packaging for Increased Density
- High-Speed SERDES Transceiver Built-In
- Robust Error Correction Mechanisms Included
- Suitable for 5G and IoT Applications
- Fully Compatible with PCIe 3.0 Standard
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Manufacturer: | onsemi | Product Category: | Darlington Transistors |
| RoHS: | Details | Configuration: | Single |
| Transistor Polarity: | NPN | Collector- Emitter Voltage VCEO Max: | 100 V |
| Emitter- Base Voltage VEBO: | 5 V | Collector- Base Voltage VCBO: | 100 V |
| Maximum DC Collector Current: | 2 A | Maximum Collector Cut-off Current: | 20 uA |
| Pd - Power Dissipation: | 20 W | Mounting Style: | SMD/SMT |
| Package / Case: | TO-252-3 (DPAK) | Minimum Operating Temperature: | - 65 C |
| Maximum Operating Temperature: | + 150 C | Series: | MJD112 |
| Packaging: | MouseReel | Brand: | onsemi |
| Continuous Collector Current: | 2 A | DC Collector/Base Gain hfe Min: | 200, 500, 1000 |
| Height: | 2.38 mm | Length: | 6.73 mm |
| Product Type: | Darlington Transistors | Factory Pack Quantity: | 2500 |
| Subcategory: | Transistors | Width: | 6.22 mm |
| Unit Weight: | 0.016579 oz |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
 |
Credit Card | charge 3.5% service fee. |
 |
Western Union | charge US.00 banking fee. |
 |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
-
![Product]( "Product")
Step1 :Product
-
![Vacuum packaging]( "Vacuum packaging")
Step2 :Vacuum packaging
-
![Anti-static bag]( "Anti-static bag")
Step3 :Anti-static bag
-
![Individual packaging]( "Individual packaging")
Step4 :Individual packaging
-
![Packaging boxes]( "Packaging boxes")
Step5 :Packaging boxes
-
![bar-code shipping tag]( "bar-code shipping tag")
Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
-
The MJD112T4G is a power transistor chip. It belongs to the NPN high voltage Power Transistor family and is designed for high speed switching applications. It has a maximum collector current of 2 A and a high collector-emitter voltage of 100 V. The chip is commonly used in various electronic devices and circuits where high voltage switching is required.
-
Equivalent
There are no direct equivalent products for the MJD112T4G chip. However, alternative options could include similar power transistors such as the MJD50T4G or the MJD122T4G. It is recommended to compare specifications and consult with the manufacturer for the best alternative match. -
Features
MJD112T4G is a NPN Darlington transistor. It has a maximum collector current of 2A, a maximum collector-emitter voltage of 100V, and a maximum power dissipation of 2W. It offers low saturation voltage, high DC current gain, and is designed for general purpose switching and amplifier applications. -
Pinout
The MJD112T4G is a transistor with a pin count of 4. It is a NPN bipolar power transistor commonly used for switching and amplification purposes in electronic circuits. -
Manufacturer
The manufacturer of the MJD112T4G is ON Semiconductor. ON Semiconductor is a global supplier of semiconductor-based solutions, including a wide range of power and signal management, logic, discrete, and custom devices. They serve various industries such as automotive, consumer electronics, industrial, medical, and aerospace/defense. -
Application Field
The MJD112T4G is a high voltage NPN bipolar power transistor primarily used in applications such as automotive ignition systems, solenoid drivers, and switching power supplies. It is designed to handle high voltage and high current levels, making it suitable for various applications that require efficient switching capabilities. -
Package
The MJD112T4G chip is in a DPAK package type, which is a surface-mount power transistor package. The form is a rectangular plastic case with three leads. The size of the chip is approximately 6.6mm x 9.9mm x 2.57mm.
We provide high quality products, thoughtful service and after sale guarantee
-
![Product]( "Product")
We have rich products, can meet your various needs.
-
![quantity]( "quantity")
Minimum order quantity starts from 1pcs.
-
![shipping]( "shipping")
Lowest international shipping fee starts from $0.00
-
![guarantee]( "guarantee")
365 days quality guarantee for all products
