This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Orders Over

$5000
Get a $50 Discount !

MJE13009G

This NPN Bipolar Power Transistor has a maximum current rating of 12 amperes

ISO14001 ISO9001 DUNS

Brands: Onsemi

Mfr.Part #: MJE13009G

Datasheet: MJE13009G Datasheet (PDF)

Package/Case: TO-220-3

Product Type: Single Bipolar Transistors

RoHS Status:

Stock Condition: 9,458 pcs, New Original

Warranty: 1 Year Ovaga Warranty - Find Out More

Quick Quote

Please submit RFQ for MJE13009G or email to us: Email: [email protected], we will contact you within 12 hours.

MJE13009G General Description

The MJE13009G is a versatile transistor that excels in high-voltage, high-speed power switching applications. Its design is optimized for fast fall times, making it an ideal choice for circuits that require precise control and efficient operation. Whether used in Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers, or Deflection circuits, this transistor delivers reliable performance and superior efficiency, helping engineers and designers meet the demands of their applications with confidence

Features

  • Operating Temperature -40°C to 125°C
  • Current Sensing & Monitoring Capabilities
  • Epoxy-Free Construction for Reliable Performance
  • High-Speed Switching Applications up to 10 kHz
  • Fault Protection Diodes for Overcurrent & Undervoltage
  • Advanced Gate Driver Technology for Improved Efficiency

Specifications

Parameter Value Parameter Value
Status Consult Sales Office Compliance PbAHP
Package Type TO-220-3 Case Outline 221A
MSL Type NA MSL Temp (°C) 0
Container Type TUBE Container Qty. 50
ON Target N Polarity NPN
VCEO Min (V) 400 hFE Min 6
hFE Max 30 fT Min (MHz) 4
PTM Max (W) 100

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The MJE13009G is a high voltage, high-speed switching transistors suitable for a wide range of applications including power supplies, motor control, and electronic ballasts. It offers high performance and reliability, making it a popular choice among electronic designers for demanding applications.
  • Equivalent

    The equivalent products of the MJE13009G chip are the MJE13005, MJE13007, and the MJE13009. These chips are all NPN silicon power transistors commonly used in high voltage and high-speed switching applications.
  • Features

    The MJE13009G is a NPN silicon power transistor designed for high-voltage, high-speed switching applications. It has a maximum collector-emitter voltage of 400V, a maximum collector current of 12A, and a maximum power dissipation of 200W. It has a TO-220AB package for easy mounting and heatsinking.
  • Pinout

    MJE13009G is a bipolar power transistor with a TO-220 package. It has three pins: the collector (C), base (B), and emitter (E). The pinout configuration is as follows: Pin 1 - Emitter, Pin 2 - Base, Pin 3 - Collector. It is commonly used for high-voltage, high-speed switching applications in power supply and amplifier circuits.
  • Manufacturer

    The manufacturer of MJE13009G is ON Semiconductor. ON Semiconductor is a leading supplier of semiconductor-based solutions, offering a comprehensive portfolio of energy efficient power management, analog, sensors, logic, timing, connectivity, discrete, SoC and custom devices. They serve a wide range of markets including automotive, communications, computing, consumer, industrial, medical, and military/aerospace.
  • Application Field

    The MJE13009G is a high voltage NPN silicon power transistor commonly used in power supply, motor control, and electronic ballast applications. It is suitable for high frequency operation and can handle high voltage and current levels, making it ideal for a variety of power electronics applications.
  • Package

    The MJE13009G is a TO-220AB package type, NPN silicon power transistor. It has a form of through-hole and a size of 10.92mm x 4.46mm x 9.96mm.

We provide high quality products, thoughtful service and after sale guarantee

  • Product

    We have rich products, can meet your various needs.

  • quantity

    Minimum order quantity starts from 1pcs.

  • shipping

    Lowest international shipping fee starts from $0.00

  • guarantee

    365 days quality guarantee for all products

Ratings and Reviews

Ratings
Please rate the product !
Please enter a comment

Please submit comments after logging into your account.

Submit

Recommend

  • AO4292E

    AO4292E

    Alpha & Omega Semiconductor Inc.

    High-quality 100V 8A SOIC-8 MOSFET with 23mΩ resi...

  • VQ1004P

    VQ1004P

    Vishay

    VQ1004P by Siliconix

  • STS4DPF30L

    STS4DPF30L

    Stmicroelectronics

    Dual P-channel MOSFET Transistor STS4DPF30L featur...

  • STS9D8NH3LL

    STS9D8NH3LL

    STMicroelectronics

    Dual N-channel 30V MOSFET, with 0.012 Ohm resistan...

  • RFP30P05

    RFP30P05

    Onsemi

    MOSFET Power P-Channel TO-220AB

  • NE3210S01-T1B

    NE3210S01-T1B

    Cel

    High-Frequency NE3210S01-T1B Transistor: Incorpora...