Orders Over
$5000MJE13009G
This NPN Bipolar Power Transistor has a maximum current rating of 12 amperes
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Brands: Onsemi
Mfr.Part #: MJE13009G
Datasheet: MJE13009G Datasheet (PDF)
Package/Case: TO-220-3
Product Type: Single Bipolar Transistors
RoHS Status:
Stock Condition: 9,458 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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MJE13009G General Description
The MJE13009G is a versatile transistor that excels in high-voltage, high-speed power switching applications. Its design is optimized for fast fall times, making it an ideal choice for circuits that require precise control and efficient operation. Whether used in Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers, or Deflection circuits, this transistor delivers reliable performance and superior efficiency, helping engineers and designers meet the demands of their applications with confidence
Features
- Operating Temperature -40°C to 125°C
- Current Sensing & Monitoring Capabilities
- Epoxy-Free Construction for Reliable Performance
- High-Speed Switching Applications up to 10 kHz
- Fault Protection Diodes for Overcurrent & Undervoltage
- Advanced Gate Driver Technology for Improved Efficiency
Specifications
Parameter | Value | Parameter | Value |
---|---|---|---|
Status | Consult Sales Office | Compliance | PbAHP |
Package Type | TO-220-3 | Case Outline | 221A |
MSL Type | NA | MSL Temp (°C) | 0 |
Container Type | TUBE | Container Qty. | 50 |
ON Target | N | Polarity | NPN |
VCEO Min (V) | 400 | hFE Min | 6 |
hFE Max | 30 | fT Min (MHz) | 4 |
PTM Max (W) | 100 |
Shipping
Shipping Type | Ship Fee | Lead Time | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The MJE13009G is a high voltage, high-speed switching transistors suitable for a wide range of applications including power supplies, motor control, and electronic ballasts. It offers high performance and reliability, making it a popular choice among electronic designers for demanding applications.
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Equivalent
The equivalent products of the MJE13009G chip are the MJE13005, MJE13007, and the MJE13009. These chips are all NPN silicon power transistors commonly used in high voltage and high-speed switching applications. -
Features
The MJE13009G is a NPN silicon power transistor designed for high-voltage, high-speed switching applications. It has a maximum collector-emitter voltage of 400V, a maximum collector current of 12A, and a maximum power dissipation of 200W. It has a TO-220AB package for easy mounting and heatsinking. -
Pinout
MJE13009G is a bipolar power transistor with a TO-220 package. It has three pins: the collector (C), base (B), and emitter (E). The pinout configuration is as follows: Pin 1 - Emitter, Pin 2 - Base, Pin 3 - Collector. It is commonly used for high-voltage, high-speed switching applications in power supply and amplifier circuits. -
Manufacturer
The manufacturer of MJE13009G is ON Semiconductor. ON Semiconductor is a leading supplier of semiconductor-based solutions, offering a comprehensive portfolio of energy efficient power management, analog, sensors, logic, timing, connectivity, discrete, SoC and custom devices. They serve a wide range of markets including automotive, communications, computing, consumer, industrial, medical, and military/aerospace. -
Application Field
The MJE13009G is a high voltage NPN silicon power transistor commonly used in power supply, motor control, and electronic ballast applications. It is suitable for high frequency operation and can handle high voltage and current levels, making it ideal for a variety of power electronics applications. -
Package
The MJE13009G is a TO-220AB package type, NPN silicon power transistor. It has a form of through-hole and a size of 10.92mm x 4.46mm x 9.96mm.
We provide high quality products, thoughtful service and after sale guarantee
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We have rich products, can meet your various needs.
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Minimum order quantity starts from 1pcs.
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365 days quality guarantee for all products